Patents by Inventor Jozef Everardus Maria Haverkort

Jozef Everardus Maria Haverkort has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • LIGHT-EMITTING OR LIGHT-ABSORBING COMPONENT
    Publication number: 20220135878
    Abstract: The invention relates to a light-emitting component comprising a light-emitting section consisting of a Hex-Si1?xGex compound material, said Hex-Si1?xGex compound material having a direct band gap for emitting light. The invention also pertains to a light-absorbing component comprising a light-absorbing section consisting of a Hex-S1?xGex compound material, said Hex-Si1?xGex compound material having a direct band gap for absorbing light.
    Type: Application
    Filed: February 18, 2020
    Publication date: May 5, 2022
    Inventors: Silvana BOTTI, Friedhelm BECHSTEDT, Jozef Everardus Maria HAVERKORT, Erik Petrus Antonius Maria BAKKERS, Elham FADALY, Alain DIJKSTRA
  • Direct band gap wurtzite semiconductor nanowires
    Patent number: 9493890
    Abstract: Growth of GaP and III-V GaP alloys in the wurtzite crystal structure by vapor phase epitaxy (VPE) is provided. Such material has a direct band gap and is therefore much more useful for optoelectronic devices than conventional GaP and GaP alloys having the zincblende crystal structure and having an indirect band gap.
    Type: Grant
    Filed: February 19, 2014
    Date of Patent: November 15, 2016
    Assignee: Technische Universiteit Eindhoven
    Inventors: Simone Assali, Ilaria Zardo, Jozef Everardus Maria Haverkort, Erik Petrus Antonius Maria Bakkers
  • Direct band gap wurtzite semiconductor nanowires
    Publication number: 20140230720
    Abstract: Growth of GaP and III-V GaP alloys in the wurtzite crystal structure by vapor phase epitaxy (VPE) is provided. Such material has a direct band gap and is therefore much more useful for optoelectronic devices than conventional GaP and GaP alloys having the zincblende crystal structure and having an indirect band gap.
    Type: Application
    Filed: February 19, 2014
    Publication date: August 21, 2014
    Inventors: Simone Assali, Ilaria Zardo, Jozef Everardus Maria Haverkort, Erik Petrus Antonius Maria Bakkers