Abstract: A lithographic apparatus is disclosed that has a heater configured to supply energy to a patterning device to heat the patterning device to form a desired thermal distortion pattern of the patterning device and a controller configured to effect an optical correction in the apparatus corresponding to the desired thermal distortion pattern to reduce the effect of thermal distortion of the patterning device on a pattern.

Abstract: A system and method for enhancing the image resolution in a lithographic system, is presented herein. The invention comprises decomposing a reticle pattern into at least two constituent sub-patterns that are capable of being optically resolved by the lithographic system, coating a substrate with a pre-specified photoresist layer, and exposing a first of the at least two constituent sub-patterns by directing a projection beam through the first sub-pattern such that the lithographic system produces a first sub-pattern image onto the pre-specified photoresist layer of the substrate. The invention further comprises processing the exposed substrate, exposing a second of the at least two constituent sub-patterns by directing the projection beam through the second sub-pattern such that the lithographic system produces a second sub-pattern image onto the pre-specified photoresist layer of the substrate, and then combining the first and second sub-pattern images to produce a desired pattern on the substrate.

Abstract: A method for improving the uniformity of a lithographic process. In one aspect, the probability density function of a first and second lithographic apparatus are matched by providing a continuous z-motion to a stage in the first lithographic apparatus during substrate exposure. Preferably, the z-motion is characterized by a normally distributed function, wherein the effective probability density function of the first apparatus is substantially similar to the probability density function of the second apparatus.

Abstract: A single exposure method and a double exposure method for reducing mask error factor and for enhancing lithographic printing-process resolution is presented. The invention comprises decomposing a desired pattern of dense lines and spaces in two sub patterns of semi dense spaces that are printed in interlaced position with respect to each other, using positive tone resist. Each of the exposures is executed after applying a relative space-width widening to the spaces of two corresponding mask patterns of semi dense spaces. A factor representative for the space-width widening has a value between 1 and 3, thereby reducing mask error factor and line edge roughness.

Abstract: A single exposure method and a double exposure method for reducing mask error factor and for enhancing lithographic printing-process resolution is presented. The invention comprises decomposing a desired pattern of dense lines and spaces in two sub patterns of semi-dense spaces that are printed in interlaced position with respect to each other, using positive tone resist. Each of the exposures is executed after applying a relative space-width widening to the spaces of two corresponding patterning device patterns of semi-dense spaces. A factor representative for the space-width widening has a value between 1 and 3, thereby reducing mask error factor and line edge roughness.

Abstract: An illumination profile useable in a lithographic apparatus to match the output of a target lithographic apparatus is obtained by obtaining a reference CD vs. pitch function for the lithographic projection apparatus at at least a plurality of pitch values using a reference illumination profile; obtaining a target CD vs. pitch function at at least the plurality of pitch values; generating a CD sensitivity map for the lithographic projection apparatus for a given pattern; calculating from the reference CD vs. pitch function, the target CD vs. pitch function and the CD sensitivity map, a suitable illumination profile to be used in said lithographic apparatus to expose said given pattern.

Abstract: A method for configuring the optical transfer of a patterning device pattern onto a substrate with a lithographic apparatus is presented. The method includes adjusting an intensity of a first illumination shape relative to a second illumination shape, the first and the second illumination shapes defining respectively a first illumination area and a second illumination area within a pupil plane of an illumination system of the lithographic apparatus, while maintaining the first and second illumination areas substantially constant, and illuminating the patterning device pattern with the first and second illumination shapes.

Abstract: The present invention relates to a lithographic apparatus and a method of using the apparatus in the manufacture of a device such as an integrated circuit (IC). In particular, the present invention relates to a lithographic apparatus wherein iso-dense bias in a printed pattern on a substrate is capable of being controlled by using radiation with a spectral distribution comprising two or more spectral peaks.

Abstract: Control of exposures is based at least in part on the relative contrast loss for a source spectrum and an pattern to be projected or an average absolute detuning of the source.

Abstract: A method is provided for modifying an image of a pattern during a lithographic imaging process, where the pattern is arranged on a mask for imaging by a projection system on a surface, and the image is an image formed from the pattern by the projection system. In this method the imaging quality of the projection system is described by selected imaging quality parameters, and the image is adjustable by image adjustment parameters of the projection system. The method comprises the steps of determining an ideal image of the pattern, determining a simulated distorted image of the pattern based on the selected imaging quality parameters; determining a deviation between the simulated distorted image and the ideal image, and adapting the image adjustment parameters during the imaging process to minimize the deviation between the simulated distorted image and the ideal image on the basis of the selected imaging quality parameters.

Abstract: In an immersion lithography apparatus or device manufacturing method, the position of focus of the projected image is changed during imaging to increase focus latitude. In an embodiment, the focus may be varied using the liquid supply system of the immersion lithographic apparatus.

Abstract: A system and method for enhancing the image resolution in a lithographic system, is presented herein. The invention comprises decomposing a reticle pattern into at least two constituent sub-patterns that are capable of being optically resolved by the lithographic system, coating a substrate with a pre-specified photoresist layer, and exposing a first of the at least two constituent sub-patterns by directing a projection beam through the first sub-pattern such that the lithographic system produces a first sub-pattern image onto the pre-specified photoresist layer of the substrate. The invention further comprises processing the exposed substrate, exposing a second of the at least two constituent sub-patterns by directing the projection beam through the second sub-pattern such that the lithographic system produces a second sub-pattern image onto the pre-specified photoresist layer of the substrate, and then combining the first and second sub-pattern images to produce a desired pattern on the substrate.

Abstract: Without changing the initial illumination setting and resist process condition, a method according to one embodiment includes manipulating the design shape by application of additional and non-printable assist features (“sub-resolution assist features” or “SRAF”), such that CD sensitivities of the pattern feature are minimized. The SRAF may comprise chrome dots, or any other design objects of different sizes, shapes, and/or types, which can modulate the intensity and/or phase of the original pattern. to minimize an aberration sensitivity of selected ones of the plurality of pattern features A pattern that was not designed to include SRAF may be modified to include SRAF. In such a method, one or more aspects of the assist features are selected to reduce the aberration-induced image variation for a pattern and its sensitivity to aberrations.

Abstract: A method for exposing a resist layer on a substrate to an image of a pattern on a mask is disclosed whereby, after starting exposure and before completing exposure, a controlled amount of contrast loss is introduced by a controller in the image at the resist layer by changing during exposure the position of the substrate holder. The contrast loss affects the pitch dependency of the resolution of a lithographic projection apparatus, and its control is used to match pitch dependency of resolution between different lithographic projection apparatus.

Abstract: A mask pattern for imaging a marker structure on a substrate with a lithographic apparatus, the marker structure being configured to determine optical alignment or overlay, includes constituent parts to define the marker structure. The constituent parts include a plurality of segments, each segment having substantially a size of a device feature and a segment shape. The mask pattern includes at least one assist feature located at a critical part of the segment shape. The at least one assist feature has substantially a size below a resolution of the lithographic projection and is configured to counteract optical aberrations or optical limitations generated in the lithographic projection at the critical part.

Abstract: A lithographic manufacturing process is disclosed in which first information of a lithographic transfer function of a first lithographic projection apparatus is obtained. The information is compared with second information of a reference lithographic transfer function (e.g. of a second lithographic projection apparatus). The difference between the first and second information is calculated. Then, the change of machine settings for the first lithographic projection apparatus, needed to minimize the difference, is calculated and applied to the first lithographic projection apparatus. In an exemplary application, a match between the first and second lithographic projection apparatus of any pitch-dependency of feature errors is improved.

Abstract: Isolated dark features, e.g. contact holes or lines, are exposed in a double exposure, using different illumination settings in the two exposures.