Abstract: A method of manufacturing a semiconductor device in which a surface zone (3) adjoining a surface (2) is formed in a silicon semiconductor body (1) by local application of carbon and dopant atoms, the carbon atoms being provided by means of implantation (4). Halogen atoms are provided simultaneously with the carbon atoms by means of an implantation with ions of a carbon-halogen compound, after which a heat treatment is carried out such that non-bonded halogen atoms are removed from the surface zone (3). Such a method is suitable for making a surface zone (3) which has a greater bandgap than silicon. The surface (3) is suitable, for example, for making an emitter region of a heterojunction bipolar transistor (HBT).

Abstract: A method of manufacturing a device, preferably a semiconductor device, whereby a mask (3) with an opening (4) extending down to a bare body (1) is provided on a surface (2) of this body (1), after which a substance (5) is implanted into the body (1) through the opening (4), upon which the mask (3) is removed. The mask (3) is provided by depositing a first and a second layer (6, 7, respectively) on the surface (2), and these layers are provided with the opening (4), while the first layer (6) can be selectively removed relative to the material of the body (1), and the second layer (7) is of the same material as the body (1). Since the same material is used for the second layer (7) as for the body (1), the body (1) is not polluted with material from the mask (3) in the opening (4) during implantation.

Abstract: A method of manufacturing a semiconductor device in which a thin buried silicide layer is formed by implantation includes the step of first forming an amorphous layer by implantation, which layer is then converted into the buried silicide layer by a heat treatment. A sufficiently thin buried silicide layer, of about 10 nm thickness, can be obtained in this manner, and the resulting structure is suitable, for example, for the manufacture of a metal-base transistor.