Abstract: Aspects of the present disclosure are directed to force sensors. As may be implemented in accordance with one or more embodiments, an apparatus includes a force-responsive component having a resonant frequency, and a circuit that compensates for variations with the force-responsive component. The force-responsive component moves in response to an applied force, in accordance with a spring constant that is susceptible to fluctuation. The compensation circuit determines Brownian motion of the force-responsive component at the resonant frequency based on temperature, and generates an output based on the determined Brownian motion and movement of the force-responsive component. Such an output is indicative of force applied to the apparatus.

Abstract: Various exemplary embodiments relate to a magnetometer device to measure oscillation frequency, including a feedthrough loop including an amplifier and a voltage bias connected to a first input of a metallic membrane; a membrane ground connected to a membrane output; a fixed plate including a first fixed plate output connected to a second input of the amplifier, wherein the fixed plate is physically separated from the metallic membrane but connected to the metallic membrane by a Lorentz force, and where the physical separation differs due to an angle of a magnetic field relative to a direction of a current; a second fixed plate output sensitive to the Lorentz force; and a circuit connected to the second fixed plate output to calculate an angle of the magnetic force based upon the Lorentz force.

Abstract: Various exemplary embodiments relate to a magnetometer device to measure oscillation frequency, including a feedthrough loop including an amplifier and a voltage bias connected to a first input of a metallic membrane; a membrane ground connected to a membrane output; a fixed plate including a first fixed plate output connected to a second input of the amplifier, wherein the fixed plate is physically separated from the metallic membrane but connected to the metallic membrane by a Lorentz force, and where the physical separation differs due to an angle of a magnetic field relative to a direction of a current; a second fixed plate output sensitive to the Lorentz force; and a circuit connected to the second fixed plate output to calculate an angle of the magnetic force based upon the Lorentz force.

Abstract: Aspects of the present disclosure are directed to force sensors. As may be implemented in accordance with one or more embodiments, an apparatus includes a force-responsive component having a resonant frequency, and a circuit that compensates for variations with the force-responsive component. The force-responsive component moves in response to an applied force, in accordance with a spring constant that is susceptible to fluctuation. The compensation circuit determines Brownian motion of the force-responsive component at the resonant frequency based on temperature, and generates an output based on the determined Brownian motion and movement of the force-responsive component. Such an output is indicative of force applied to the apparatus.

Abstract: A frequency selection device comprises an oscillator, which comprises a resonator mass which is connected by a spring arrangement to a substrate, and a piezoresistive element for controlling oscillation of the resonator mass, which comprises a piezoresistive element connected to the resonator mass. A current is driven through the piezoresistive element to control oscillation of the resonator mass. An input is provided for coupling a signal from which a desired frequency range is to be selected, to the resonator mass; and a detector is used for detecting a signal amplified by the oscillator.

Abstract: A frequency selection device comprises an oscillator, which comprises a resonator mass which is connected by a spring arrangement to a substrate, and a piezoresistive element for controlling oscillation of the resonator mass, which comprises a piezoresistive element connected to the resonator mass. A current is driven through the piezoresistive element to control oscillation of the resonator mass. An input is provided for coupling a signal from which a desired frequency range is to be selected, to the resonator mass; and a detector is used for detecting a signal amplified by the oscillator.

Abstract: The electronic device comprises a network of at least one thin-film capacitor and at least one inductor on a first side of a substrate of a semiconductor material. The substrate has a resistivity sufficiently high to limit electrical losses of the inductor and being provided with an electrically insulating surface layer on its first side. A first and a second lateral pin diode are defined in the substrate, each of the pin diodes having a doped p-region, a doped n-region and an intermediate intrinsic region. The intrinsic region of the first pin diode is larger than that of the second pin diode.

Abstract: A method for manufacturing a micro-electromechanical systems (MEMS) device, comprising providing a base layer (10) and a mechanical layer (12) on a substrate (14), providing a sacrificial layer (16) between the base layer (10) and the mechanical layer (12), providing an etch stop layer (18) between the sacrificial layer (16) and the substrate (14), and removing the sacrificial layer (16) by means of dry chemical etching, wherein the dry chemical etching is performed using a fluorine-containing plasma, and the etch stop layer (18) comprises a substantially non-conducting, fluorine chemistry inert material, such as HfO2, ZrO2, Al2O3 or TiO2.

Abstract: There is provided a touch sensitive display comprising a passive substrate, an active substrate, and a display material disposed between the passive and active substrates, wherein driving circuitry for driving a pixel of the display and touch sensing circuitry are arranged on the active substrate. The touch sensing circuitry comprises at least one component with a first and a second electrode, wherein the electrodes are arranged to displace with respect to each other in response to a touch input.

Abstract: A touch sensitive display comprises pixels (18), each of the pixels (18) have a pixel electrode (22). An optical state of a pixel (18) depends on a drive voltage (VD) supplied to the pixel electrode (22). A touch sensitive elements (S1) is arranged between the pixel electrode (22) and a further electrode (40;17). The touch sensitive element (S1) has an impedance dependent on a mechanical force applied to it.

Abstract: A portable device is provided having a touch sensitive display (100) comprising an active matrix display element (101) and a touch sensitive element (103). The touch sensitive element (103) is disposed on the viewer distal side of the active matrix display element (101) thereby not affecting the display properties. The touch sensitive element (103) comprises a first and second conductive layer (113, 115) each having a plurality of conductors. The conductive layers (113, 115) sandwich a pressure sensitive layer (117) which modifies an electrical conductivity between two conductors of the two conductive layers (113, 115) in response to a pressure point resulting from an applied pressure. Thus, accurate position detection is achieved. The conductors may be aligned with the active matrix and the requirement for calibration may be obviated.

Abstract: The invention relates to a method of manufacturing a micro-electromechanical device (10), in which are consecutively deposited on a substrate (1) a first electroconductive layer (2) in which an electrode (2A) is formed, a first electroinsulating layer (3) of a first material, a second electroinsulating layer (4) of a second material different from the first material, and a second electroconductive layer (5) in which a second electrode (5A) lying opposite the first electrode is formed which together with the first electrode (2A) and the first insulating layer (3) forms the device (10), in which after the second conductive layer (5) has been deposited, the second insulating layer (4) is removed by means of an etching agent which is selective with respect to the material of the second conductive layer (5).