Abstract: The invention relates to a semiconductor device (10) comprising an electrically conductive bottom plate (1) on an upper side of which a semiconductor element (2) is positioned with a first connection region and a second connection region and with a first conductor and a second conductor, part of which is connected to, respectively, the first and the second connection region of the semiconductor element (2), the semiconductor element (2) and the parts of the conductors connected to the semiconductor element (2) being provided with an electrically insulating resin encapsulation (4) that covers a side face of the bottom plate (1), and the side face of the bottom plate (1) being provided, at the bottom face of the bottom plate (1), with a cavity (5) which is filled with a part of the encapsulation (4). According to the invention, the cavity (5), viewed in a direction transverse and perpendicular to the edge of the bottom plate (1), has the form of a staircase with to steps.

Abstract: The invention relates to a semiconductor device with a diode. The semiconductor body (10) comprises a stack of a first semiconductor region provided with a first connection conductor (5) and a second semiconductor region (2) connected to a second connection conductor (6), wherein a rectifying junction is present between the two semiconductor regions (1, 2) having opposite conductivity types. Such a device is—after a rotation through 90 degrees—suitable for surface mounting. However, in particular at high voltage and/or high power levels, the diode may suffer from breakdown or a high leakage current.

Abstract: The invention relates to a semiconductor device with a diode. The semiconductor body (10) comprises a stack of a first semiconductor region provided with a first connection conductor (5) and a second semiconductor region (2) connected to a second connection conductor (6), wherein a rectifying junction is present between the two semiconductor regions (1, 2) having opposite conductivity types. Such a device is—after a rotation through 90 degrees—suitable for surface mounting. However, in particular at high voltage and/or high power levels, the diode may suffer from breakdown or a high leakage current.