Abstract: A resist pattern-forming method capable of forming a resist pattern excellent in pattern collapse resistance in the case of development with the organic solvent in multilayer resist processes. The method has the steps of: (1) providing a resist underlayer film on a substrate using a composition for forming a resist underlayer film; (2) providing a resist film on the resist underlayer film using a photoresist composition; (3) exposing the resist film; and (4) developing the exposed resist film using a developer solution containing no less than 80% by mass of an organic solvent, in which the composition for forming a resist underlayer film contains (A) a component that includes a polysiloxane chain and that has a carboxyl group, a group that can generate a carboxyl group by an action of an acid, an acid anhydride group or a combination thereof.

Abstract: A method for forming a pattern includes providing a composition to form a resist underlayer film on a surface of a substrate to be processed. The composition contains a calixarene based compound having a group represented by a following formula (i) bound to at least a part of an aromatic ring or at least a part of a heteroaromatic ring of the calixarene based compound. The resist underlayer film on the surface of the substrate is treated with heat or an acid. A resist pattern is formed on a surface of the resist underlayer film. The resist underlayer film and the substrate are etched using the resist pattern as a mask to form the pattern on the substrate. The dry-etched resist underlayer film is removed from the substrate with a basic solution.

Abstract: A radiation-sensitive resin composition includes a compound represented by a following formula (1) and a base polymer. In the formula (1), R1 represents a monovalent cyclic organic group having a cyclic ester structure or a cyclic ketone structure; R2 represents a single bond or —CH2—; X is —O—*, —COO—*, —O—CO—O—* or —SO2-O—*, wherein * denotes a binding site to R3; R3 represents a bivalent chain hydrocarbon group having 1 to 5 carbon atoms; and M+ is a monovalent cation. The base polymer has a structural unit derived from (meth)acrylate that includes a lactone skeleton, a structural unit derived from (meth)acrylate that includes a cyclic carbonate skeleton, a structural unit derived from (meth)acrylate that includes a sultone skeleton, a structural unit derived from (meth)acrylate that includes a polar group, or a combination thereof.

Abstract: A photoresist composition includes a polymer that includes a first structural unit shown by a formula (1), and an acid generator. R1 represents a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group. R2 represents a divalent hydrocarbon group having 1 to 10 carbon atoms. A represents —COO—*, —OCO—*, —O—, —S—, or —NH—, wherein “*” indicates a site bonded to R3. R3 represents a single bond or a divalent hydrocarbon group having 1 to 10 carbon atoms. The polymer preferably further includes a second structural unit that includes an acid-labile group.

Abstract: An insulation pattern-forming method includes forming an organic pattern on a substrate. A space defined by the organic pattern is filled with an insulating material. The organic pattern is removed to obtain an inverted pattern formed of the insulating material. The inverted pattern is cured. An insulation pattern-forming method includes forming a first organic pattern on the substrate. A space defined by the first organic pattern is filled with an insulating material. An upper surface of the first organic pattern is exposed. A second organic pattern that comes in contact with the upper surface of the first organic pattern is formed. A space defined by the second organic pattern is filled with the insulating material. The first organic pattern and the second organic pattern are removed to obtain an inverted pattern formed of the insulating material. The inverted pattern is cured.

Abstract: A method for forming a pattern includes providing a resist underlayer film on a substrate using a first composition for forming a resist underlayer film. The first composition includes a polymer having a structural unit represented by a following formula (1). In the formula (1), Ar1 and Ar2 each independently represent a bivalent group represented by a following formula (2). A resist coating film is provided on the resist underlayer film using a resist composition. A resist pattern is formed using the resist coating film. A predetermined pattern is formed on the substrate by sequentially dry-etching the resist underlayer film and the substrate using the resist pattern as a mask.

Abstract: A composition for forming a liquid immersion upper layer film, includes a first polymer, a second polymer and a solvent. The first polymer includes a first structural unit having a group represented by a following formula (i). In the formula (i), n is an integer of 1 to 3, and R1 represents a hydrocarbon group having a valency of (n+1) and having 1 to 20 carbon atoms. The second polymer is different from the first polymer.

Abstract: A radiation-sensitive resin composition includes an acid generating agent to generate a compound represented by a following formula (1) by irradiation with a radioactive ray. In the formula (1), R1 represents a monovalent organic group having 1 to 20 carbon atoms. R2 represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms. The compound represented by the formula (1) is preferably a compound represented by a following formula (1-1). In the formula (1-1), R2 is as defined in the above formula (1). X represents an electron attractive group. R3 represents a monovalent organic group having 1 to 20 carbon atoms.

Abstract: A photoresist composition includes a first polymer, a second polymer and a third polymer. The first polymer has a fluorine atom and a first structural unit that includes a hydrophilic group. The second polymer has a fluorine atom a second structural unit that includes an alkali-dissociable group. The third polymer has an acid-dissociable group. The first polymer, the second polymer and the third polymer are different with one another. It is preferred that the first structural unit is represented by a following formula, and the second structural unit is represented by a following formula (2).

Abstract: A polymer includes a repeating unit shown by a following general formula (1). R1 represents a hydrogen atom, a methyl group, a fluorine atom, or a trifluoromethyl group. R2 represents a substituted or unsubstituted aryl group having 6 to 22 carbon atoms. Y represents a carbon atom. X represents an atomic group that forms an alicyclic hydrocarbon group together with Y.

Abstract: A radiation-sensitive resin composition includes a polymer and a photoacid generator. The polymer includes a first structural unit shown by a formula (a1), a second structural unit shown by a formula (a2), and a third structural unit having a lactone structure. A content of the first structural unit in the polymer being 50 mol % or more based on total structural units included in the polymer. The first structural unit is preferably a structural unit shown by a formula (a1-1).

Abstract: A radiation-sensitive resin composition includes a first polymer having a structural unit represented by a following formula (1), and a radiation-sensitive acid generator. RC in the formula (1) preferably represents an aliphatic polycyclic hydrocarbon group having a valency of (n+1) and having 4 to 30 carbon atoms. The structural unit represented by the formula (1) is preferably a structural unit represented by a n following formula (1-1).