Abstract: A display device includes: a flexible substrate; a display unit on the flexible substrate and configured to display an image; and a compensation layer between the flexible substrate and the display unit.

Abstract: A mask comprises a mask frame defining an opening; a plurality of support bars installed in the opening of the mask frame; a plurality of movable bars, each of which is installed over a corresponding one of the plurality of support bars and movable relative to the corresponding support bar, wherein the plurality of support bars and the plurality of movable bars are arranged to divide the opening into a plurality of mask holes; and a plurality of actuators installed between the plurality of movable bars and the corresponding support bars and configured to move the movable bars relative to the plurality of support bars.

Abstract: A flexible display device including a substrate including a display unit; a driver integrated chip (IC) connected to the display unit of the substrate, the driver IC supplying a driving voltage; a flexible printed circuit (FPC) attached to an outside portion of the substrate by a substrate pad part at an outer side of the driver IC; and a printed circuit board (PCB) attached to the FPC by a PCB pad part, the PCB transferring a driving voltage to the driver IC of the substrate through the FPC, wherein the outside portion of the substrate is bent to be attached to the FPC, and the FPC is bent in an opposite direction to a bending direction of the outside portion of the substrate to be attached to the PCB.

Abstract: A method of manufacturing an organic light emitting display includes: patterning an amorphous silicon layer to form an amorphous silicon layer pattern; forming an insulating layer on the amorphous silicon layer pattern; forming a gate electrode on a part of the insulating layer which corresponds to the amorphous silicon layer pattern; forming a blocking film on the gate electrode and the insulating layer; doping an impurity in a part of the amorphous silicon layer pattern; annealing the amorphous silicon layer pattern on which the impurity is doped to form a semiconductor layer; removing the blocking film; etching the insulating layer using the gate electrode as a mask to form a gate insulating layer below the gate electrode; forming an interlayer insulating layer using an organic insulator on a buffer layer, the gate electrode, and the semiconductor layer.