Abstract: In a method of manufacturing a semiconductor device, a tungsten layer pattern having an oxidized surface is formed on a substrate. A source gas including silicon is provided to the oxidized surface of the tungsten layer pattern to form a protecting layer on the oxidized surface of the tungsten layer pattern. The protecting layer prevents an abnormal growth of oxide contained in the oxidized surface. The protecting layer prevents a whisker from growing from the oxidized surface of the tungsten layer pattern.

Abstract: An integrated circuit includes a substrate and a first insulating layer on the substrate that includes a first hole including a floor and a sidewall. A first conductive contact extends conformally on the sidewall and floor to define a groove in the first hole. A second insulating layer is provided on the first insulating layer and includes a second hole that exposes the groove. A second conductive contact is provided in the second hole and in the groove. These integrated circuits are fabricated by forming a first insulating layer on a substrate that includes a first hole including a floor and a sidewall. A first conductive contact is conformally formed on the sidewall and floor to define a groove in the first hole. A second insulating layer is formed on the first insulating layer and includes a second hole that exposes the groove. A second conductive contact is formed in the second hole and in the groove.

Abstract: In a method of forming a contact in a semiconductor device, an insulating layer is formed on the semiconductor substrate. Then, a contact hole is formed by selectively etching the insulating layer. A barrier metal layer is deposited on side and bottom surfaces of the contact hole and on a top surface of the insulating layer to a uniform thickness. A wetting layer of an oxidation-resistive metal material is deposited on the barrier metal layer. A metal layer is formed on the wetting layer and fills the contact hole to thereby form a contact in the semiconductor device.

Abstract: An integrated circuit includes a substrate and a first insulating layer on the substrate that includes a first hole including a floor and a sidewall. A first conductive contact extends conformally on the sidewall and floor to define a groove in the first hole. A second insulating layer is provided on the first insulating layer and includes a second hole that exposes the groove. A second conductive contact is provided in the second hole and in the groove. These integrated circuits are fabricated by forming a first insulating layer on a substrate that includes a first hole including a floor and a sidewall. A first conductive contact is conformally formed on the sidewall and floor to define a groove in the first hole. A second insulating layer is formed on the first insulating layer and includes a second hole that exposes the groove. A second conductive contact is formed in the second hole and in the groove.

Abstract: A preliminary metal layer having a first thickness is formed on a substrate. A surface of the preliminary metal layer having uneven portions is etched to remove the uneven portions and to form a metal layer having an improved surface morphology. Therefore, shorts caused by the surface morphology of a metal layer occur less frequently and the semiconductor fabricating yield improves.

Abstract: In a method of manufacturing a semiconductor device, a tungsten layer pattern having an oxidized surface is formed on a substrate. A source gas including silicon is provided to the oxidized surface of the tungsten layer pattern to form a protecting layer on the oxidized surface of the tungsten layer pattern. The protecting layer prevents an abnormal growth of oxide contained in the oxidized surface. The protecting layer prevents a whisker from growing from the oxidized surface of the tungsten layer pattern.

Abstract: A method for preventing void formation in a polycide structure includes sequentially depositing a gate oxide film, a polysilicon film doped with impurities, a seed film having a sufficient amount of silicon for reacting with an overlaying tungsten layer, a tungsten silicide precursor layer; and an etch mask made of an insulating material on a semiconductor substrate; performing a patterned etching using the etch mask; and heat-treating the resulting structure in an oxygen atmosphere at an elevated temperature and pressure to form a polycide structure wherein void formation is prevented. Since the seed film has a sufficient amount of amorphous silicon for reacting to the tungsten, migration of silicon atoms to the interfacial surface between the polysilicon film and the tungsten silicide precursor layer is prevented, thereby preventing the formation of voids in the polysilicon film.

Abstract: Disclosed are methods for forming a conductive film or a conductive pattern on a semiconductor substrate, including nitrifying a semiconductor substrate on which a tungsten film having a partially oxidized surface is formed to form a tungsten nitride film on the surface of the tungsten film, oxidizing the surface of the tungsten film having the tungsten nitride film to change the tungsten nitride film into a tungsten oxy-nitride film, and removing the tungsten oxy-nitride film and any residue generated by a reaction of tungsten from the surface of the tungsten film to form a tungsten film. Complete removal of residues generated by a reaction of tungsten from the surface of the tungsten film is made possible. Therefore, resistance of the tungsten film may be reduced, and failures generated by reacted residues formed on tungsten films may be prevented.

Abstract: The present invention relates to metal interconnections for bit lines having a low resistance and an advanced morphology and a method of forming the same including: forming an inter-layer insulation film on a semiconductor substrate, the inter-layer insulation film containing a contact hole for the bit line; forming a plug within the contact hole; forming a barrier metal defined on the plug; and forming a bit line on the inter-layer insulation film.

Abstract: In a method of forming a contact in a semiconductor device, an insulating layer is formed on the semiconductor substrate. Then, a contact hole is formed by selectively etching the insulating layer. A barrier metal layer is deposited on side and bottom surfaces of the contact hole and on a top surface of the insulating layer to a uniform thickness. A wetting layer of an oxidation-resistive metal material is deposited on the barrier metal layer. A metal layer is formed on the wetting layer and fills the contact hole to thereby form a contact in the semiconductor device.

Abstract: Disclosed are methods for forming a conductive film or a conductive pattern on a semiconductor substrate, including nitrifying a semiconductor substrate on which a tungsten film having a partially oxidized surface is formed to form a tungsten nitride film on the surface of the tungsten film, oxidizing the surface of the tungsten film having the tungsten nitride film to change the tungsten nitride film into a tungsten oxy-nitride film, and removing the tungsten oxy-nitride film and any residue generated by a reaction of tungsten from the surface of the tungsten film to form a tungsten film. Complete removal of residues generated by a reaction of tungsten from the surface of the tungsten film is made possible. Therefore, resistance of the tungsten film may be reduced, and failures generated by reacted residues formed on tungsten films may be prevented.

Abstract: An integrated circuit includes a substrate and a first insulating layer on the substrate that includes a first hole including a floor and a sidewall. A first conductive contact extends conformally on the sidewall and floor to define a groove in the first hole. A second insulating layer is provided on the first insulating layer and includes a second hole that exposes the groove. A second conductive contact is provided in the second hole and in the groove. These integrated circuits are fabricated by forming a first insulating layer on a substrate that includes a first hole including a floor and a sidewall. A first conductive contact is conformally formed on the sidewall and floor to define a groove in the first hole. A second insulating layer is formed on the first insulating layer and includes a second hole that exposes the groove. A second conductive contact is formed in the second hole and in the groove.

Abstract: The present invention relates to metal interconnections for bit lines having a low resistance and an advanced morphology and a method of forming the same including: forming an inter-layer insulation film on a semiconductor substrate, the inter-layer insulation film containing a contact hole for the bit line; forming a plug within the contact hole; forming a barrier metal defined on the plug; and forming a bit line on the inter-layer insulation film.

Abstract: A chemical vapor deposition (CVD) method for depositing a silicide and a CVD system for performing the same are disclosed. A silicide is deposited on a substrate. Residual gases remaining from the depositing step are purged out by flowing air including H2O (g), to substantially remove fumes caused by the residual gases. In the purge step, the cycle purge is carried out at the conditions similar to the flow of atmosphere, to substantially remove the fumes.

Abstract: A chemical vapor deposition (CVD) method for depositing a suicide and a CVD system for performing the same are disclosed. A silicide is deposited on a substrate. Residual gases remaining from the depositing step are purged out by flowing air including H2O (g), to substantially remove fumes caused by the residual gases. In the purge step, the cycle purge is carried out at the conditions similar to the flow of atmosphere, to substantially remove the fumes.

Abstract: A method for preventing void formation in a polycide structure includes sequentially depositing a gate oxide film, a polysilicon film doped with impurities, a seed film having a sufficient amount of silicon for reacting with an overlaying tungsten layer, a tungsten silicide precursor layer; and an etch mask made of an insulating material on a semiconductor substrate; performing a patterned etching using the etch mask; and heat-treating the resulting structure in an oxygen atmosphere at an elevated temperature and pressure to form a polycide structure wherein void formation is prevented. Since the seed film has a sufficient amount of amorphous silicon for reacting to the tungsten, migration of silicon atoms to the interfacial surface between the polysilicon film and the tungsten silicide precursor layer is prevented, thereby preventing the formation of voids in the polysilicon film.

Abstract: The present invention relates to metal interconnections for bit lines having a low resistance and an advanced morphology and a method of forming the same including: forming an inter-layer insulation film on a semiconductor substrate, the inter-layer insulation film containing a contact hole for the bit line; forming a plug within the contact hole; forming a barrier metal defined on the plug; and forming a bit line on the inter-layer insulation film.

Abstract: A chemical vapor deposition (CVD) method for depositing a suicide and a CVD system for performing the same are disclosed. A silicide is deposited on a substrate. Residual gases remaining from the depositing step are purged out by flowing air including H2O (g), to substantially remove fumes caused by the residual gases. In the purge step, the cycle purge is carried out at the conditions similar to the flow of atmosphere, to substantially remove the fumes.