Abstract: A semiconductor device provides a gate structure that includes a conductive portion and a high-k dielectric material formed beneath and along sides of the conductive material. An additional gate dielectric material such as a gate oxide may be used in addition to the high-k dielectric material. The method for forming the structure includes forming an opening in an organic material, forming the high-k dielectric material and a conductive material within the opening and over the organic material then using chemical mechanical polishing to remove the high-k dielectric material and conductive material from regions outside the gate region.

Abstract: The formation of gate spacers on the sides of a gate structure on a semiconductor substrate is provided. In one embodiment, a gate structure is formed on a gate insulator layer of the semiconductor substrate. A liner layer is formed over the exposed surfaces of the substrate, the gate insulator layer, and the gate structure. A layer of gate spacer material is formed over the liner layer. Thereafter, gate spacers are formed from the layer of gate spacer material. A protection layer is formed over portions of the liner layer, gate structure, and the gate spacers. The protection layer is etched back. A first wet etch procedure is performed to remove exposed portions of the liner layer. The protection layer is removed and a second wet etch procedure is performed to remove substantially a top portion and a bottom portion of the liner layer.

Abstract: The formation of gate spacers on the sides of a gate structure on a semiconductor substrate is provided. In one embodiment, a gate structure is formed on a gate insulator layer of the semiconductor substrate. A liner layer is formed over the exposed surfaces of the substrate, the gate insulator layer, and the gate structure. A layer of gate spacer material is formed over the liner layer. Thereafter, gate spacers are formed from the layer of gate spacer material. A protection layer is formed over portions of the liner layer, gate structure, and the gate spacers. The protection layer is etched back. A first wet etch procedure is performed to remove exposed portions of the liner layer. The protection layer is removed and a second wet etch procedure is performed to remove substantially a top portion and a bottom portion of the liner layer.

Abstract: A semiconductor device provides a gate structure that includes a conductive portion and a high-k dielectric material formed beneath and along sides of the conductive material. An additional gate dielectric material such as a gate oxide may be used in addition to the high-k dielectric material. The method for forming the structure includes forming an opening in an organic material, forming the high-k dielectric material and a conductive material within the opening and over the organic material then using chemical mechanical polishing to remove the high-k dielectric material and conductive material from regions outside the gate region.

Abstract: The present invention provides aqueous compositions for cleaning integrated circuit substrates. Specifically, in the cleaning of an integrated circuit substrate, disclosed is a method for removing the by-products of the high-k dielectric dry etch process from the integrated circuit substrate, the method including: contacting the integrated circuit substrate with an aqueous composition including an amount, effective for the purpose of a (a) hydrogen fluoride, followed by (b) a mixture of hydrogen peroxide with a compound selected from the group consisting of ammonium hydroxide, hydrochloric acid and sulfuric acid.