Abstract: A water-cooled heat dissipation module assembly capable of cooling a power module of a vehicle driving inverter system using a battery or fuel cell. The water-cooled heat dissipation module assembly includes a housing unit provided in the form of a housing having an opening portion at least partially opened at one side thereof. The housing unit and at least a part of a rim region of the cooling unit are made of a plastic material, and the housing unit and the cooling unit are joined to each other by plastic welding using a laser.

Abstract: Provided is a non-volatile memory device including at least one horizontal electrode, at least one vertical electrode, at least one data storage layer and at least one reaction prevention layer. The least one vertical electrode crosses the at least one horizontal electrode. The at least one data storage layer is located in regions in which the at least one vertical electrode crosses the at least one horizontal electrode, and stores data by varying its electrical resistance. The at least one reaction prevention layer is located in the regions in which the at least one vertical electrode crosses the at least one horizontal electrode.

Abstract: A phase-changeable memory device includes a phase-changeable material pattern and first and second electrodes electrically connected to the phase-changeable material pattern. The first and second electrodes are configured to provide an electrical signal to the phase-changeable material pattern. The phase-changeable material pattern includes a first phase-changeable material layer and a second phase-changeable material layer. The first and second phase-changeable material patterns have different chemical, physical, and/or electrical characteristics. For example, the second phase-changeable material layer may have a greater resistivity than the first phase-changeable material layer. For instance, the first phase-changeable material layer may include nitrogen at a first concentration, and the second phase-changeable material layer may include nitrogen at a second concentration that is greater than the first concentration. Related devices and fabrication methods are also discussed.

Abstract: Provided is a non-volatile memory device including at least one horizontal electrode, at least one vertical electrode, at least one data storage layer and at least one reaction prevention layer. The least one vertical electrode crosses the at least one horizontal electrode. The at least one data storage layer is located in regions in which the at least one vertical electrode crosses the at least one horizontal electrode, and stores data by varying its electrical resistance. The at least one reaction prevention layer is located in the regions in which the at least one vertical electrode crosses the at least one horizontal electrode.

Abstract: Disclosed herein is a semiconductor electrode with improved power conversion efficiency through inhibition of recombination reactions of electrons. The semiconductor electrode comprises a transparent electrode consisting of a substrate and a conductive material coated on the substrate, and a metal oxide layer formed on the transparent electrode wherein the metal oxide layer contains a phosphate. Further disclosed is a solar cell employing the semiconductor electrode.

Abstract: A phase-changeable memory device includes a phase-changeable material pattern and first and second electrodes electrically connected to the phase-changeable material pattern. The first and second electrodes are configured to provide an electrical signal to the phase-changeable material pattern. The phase-changeable material pattern includes a first phase-changeable material layer and a second phase-changeable material layer. The first and second phase-changeable material patterns have different chemical, physical, and/or electrical characteristics. For example, the second phase-changeable material layer may have a greater resistivity than the first phase-changeable material layer. For instance, the first phase-changeable material layer may include nitrogen at a first concentration, and the second phase-changeable material layer may include nitrogen at a second concentration that is greater than the first concentration. Related devices and fabrication methods are also discussed.

Abstract: A phase-changeable memory device includes a phase-changeable material pattern and first and second electrodes electrically connected to the phase-changeable material pattern. The first and second electrodes are configured to provide an electrical signal to the phase-changeable material pattern. The phase-changeable material pattern includes a first phase-changeable material layer and a second phase-changeable material layer. The first and second phase-changeable material patterns have different chemical, physical, and/or electrical characteristics. For example, the second phase-changeable material layer may have a greater resistivity than the first phase-changeable material layer. For instance, the first phase-changeable material layer may include nitrogen at a first concentration, and the second phase-changeable material layer may include nitrogen at a second concentration that is greater than the first concentration. Related devices and fabrication methods are also discussed.

Abstract: A phase-changeable memory device includes a phase-changeable material pattern and first and second electrodes electrically connected to the phase-changeable material pattern. The first and second electrodes are configured to provide an electrical signal to the phase-changeable material pattern. The phase-changeable material pattern includes a first phase-changeable material layer and a second phase-changeable material layer. The first and second phase-changeable material patterns have different chemical, physical, and/or electrical characteristics. For example, the second phase-changeable material layer may have a greater resistivity than the first phase-changeable material layer. For instance, the first phase-changeable material layer may include nitrogen at a first concentration, and the second phase-changeable material layer may include nitrogen at a second concentration that is greater than the first concentration. Related devices and fabrication methods are also discussed.

Abstract: Disclosed is a phase-change memory device including a phase-change material pattern, a diffusion barrier layer, a bottom electrode and a top electrode. The phase-change material pattern is placed on the bottom electrode, and the diffusion barrier layer containing tellurium is placed on the phase-change material pattern. The top electrode containing titanium is placed on the diffusion barrier layer. The diffusion barrier layer acts to inhibit diffusion of titanium from the top electrode into the phase-change material pattern.

Abstract: A phase-changeable memory device includes a phase-changeable material pattern and first and second electrodes electrically connected to the phase-changeable material pattern. The first and second electrodes are configured to provide an electrical signal to the phase-changeable material pattern. The phase-changeable material pattern includes a first phase-changeable material layer and a second phase-changeable material layer. The first and second phase-changeable material patterns have different chemical, physical, and/or electrical characteristics. For example, the second phase-changeable material layer may have a greater resistivity than the first phase-changeable material layer. For instance, the first phase-changeable material layer may include nitrogen at a first concentration, and the second phase-changeable material layer may include nitrogen at a second concentration that is greater than the first concentration. Related devices and fabrication methods are also discussed.

Abstract: A phase change material layer is a single layer including an upper layer portion and a lower layer portion. Crystal lattices of the upper layer portion and the lower layer portion are different. The phase change material layer is formed by forming a doped lower layer by supplying a first source with a doping gas to a substrate. The supply of the doping gas is stopped and an undoped upper layer is formed by supplying a second source onto the lower layer. The upper layer and the lower layer are formed such that crystal lattices of the upper and lower layers are different.

Abstract: Provided herein are a method and an apparatus for isolating nucleic acids from cells. The method comprises introducing carbon nanotubes (CNTs) and silica beads into a solution containing the cells, irradiating the solution with a laser beam disrupt the cells releasing the nucleic acids from the disrupted cells, thereby binding the nucleic acids to the silica beads, and adding a nucleic acid eluting solution to the silica beads to which the nucleic acids are bound, to elute the nucleic acids from the silica beads.

Abstract: Disclosed is a phase-change memory device including a phase-change material pattern, a diffusion barrier layer, a bottom electrode and a top electrode. The phase-change material pattern is placed on the bottom electrode, and the diffusion barrier layer containing tellurium is placed on the phase-change material pattern. The top electrode containing titanium is placed on the diffusion barrier layer. The diffusion barrier layer acts to inhibit diffusion of titanium from the top electrode into the phase-change material pattern.

Abstract: Disclosed herein is a semiconductor electrode with improved power conversion efficiency through inhibition of recombination reactions of electrons. The semiconductor electrode comprises a transparent electrode consisting of a substrate and a conductive material coated on the substrate, and a metal oxide layer formed on the transparent electrode wherein the metal oxide layer contains a phosphate. Further disclosed is a solar cell employing the semiconductor electrode.

Abstract: A phase-changeable memory device includes a phase-changeable material pattern and first and second electrodes electrically connected to the phase-changeable material pattern. The first and second electrodes are configured to provide an electrical signal to the phase-changeable material pattern. The phase-changeable material pattern includes a first phase-changeable material layer and a second phase-changeable material layer. The first and second phase-changeable material patterns have different chemical, physical, and/or electrical characteristics. For example, the second phase-changeable material layer may have a greater resistivity than the first phase-changeable material layer. For instance, the first phase-changeable material layer may include nitrogen at a first concentration, and the second phase-changeable material layer may include nitrogen at a second concentration that is greater than the first concentration. Related devices and fabrication methods are also discussed.

Abstract: A method of forming a ferroelectric thin film for suppressing the formation of a-domain and providing a sufficient layer coverage may be provided. The method includes immersing a substrate having the miscut surface into a reaction solution including a precursor compound for perovskite-type ferroelectric and water, and implementing a hydrothermal reaction in the reaction solution at a temperature lower than the phase transition temperature of the perovskite-type ferroelectric, thereby forming a perovskite-type ferroelectric thin film on the miscut surface of the substrate.