Patents by Inventor Ju Chull WON

Ju Chull WON has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Wafer level packaged GaN power device and manufacturing method thereof
    Patent number: 8691627
    Abstract: Disclosed are a GaN-based compound power semiconductor device and a manufacturing method thereof, in which on a GaN power semiconductor element, a contact pad is formed for flip-chip bonding, and a bonding pad of a module substrate to be mounted with the GaN power semiconductor element is formed with a bump so as to modularize an individual semiconductor element. In the disclosed GaN-based compound power semiconductor device, an AlGaN HEMT element is flip-chip bonded to the substrate, so that heat generated from the element can be efficiently radiated.
    Type: Grant
    Filed: July 25, 2013
    Date of Patent: April 8, 2014
    Assignee: Electronics and Telecommunications Research Institute
    Inventor: Ju Chull Won
  • WAFER LEVEL PACKAGED GaN POWER DEVICE AND MANUFACTURING METHOD THEREOF
    Publication number: 20130309811
    Abstract: Disclosed are a GaN-based compound power semiconductor device and a manufacturing method thereof, in which on a GaN power semiconductor element, a contact pad is formed for flip-chip bonding, and a bonding pad of a module substrate to be mounted with the GaN power semiconductor element is formed with a bump so as to modularize an individual semiconductor element. In the disclosed GaN-based compound power semiconductor device, an AlGaN HEMT element is flip-chip bonded to the substrate, so that heat generated from the element can be efficiently radiated.
    Type: Application
    Filed: July 25, 2013
    Publication date: November 21, 2013
    Applicant: Electronics and Telecommunications Research Institute
    Inventor: Ju Chull WON
  • Wafer level packaged GaN power device and the manufacturing method thereof
    Patent number: 8519548
    Abstract: Disclosed are a GaN-based compound power semiconductor device and a manufacturing method thereof, in which on a GaN power semiconductor element, a contact pad is formed for flip-chip bonding, and a bonding pad of a module substrate to be mounted with the GaN power semiconductor element is formed with a bump so as to modularize an individual semiconductor element. In the disclosed GaN-based compound power semiconductor device, an AlGaN HEMT element is flip-chip bonded to the substrate, so that heat generated from the element can be efficiently radiated.
    Type: Grant
    Filed: July 19, 2011
    Date of Patent: August 27, 2013
    Assignee: Electronics and Telecommunications Research Institute
    Inventor: Ju Chull Won
  • Wafer level packaged GaN power device and the manufacturing method thereof
    Publication number: 20120126240
    Abstract: Disclosed are a GaN-based compound power semiconductor device and a manufacturing method thereof, in which on a GaN power semiconductor element, a contact pad is formed for flip-chip bonding, and a bonding pad of a module substrate to be mounted with the GaN power semiconductor element is formed with a bump so as to modularize an individual semiconductor element. In the disclosed GaN-based compound power semiconductor device, an AlGaN HEMT element is flip-chip bonded to the substrate, so that heat generated from the element can be efficiently radiated.
    Type: Application
    Filed: July 19, 2011
    Publication date: May 24, 2012
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventor: Ju Chull WON