Abstract: A high-power edge-emitting laser device and a manufacturing method thereof are disclosed. The high-power edge-emitting laser device includes a substrate, a first cladding layer, an active layer, a second cladding layer, a cap layer, a passivation layer, and a dielectric layer. The first cladding layer is disposed on the substrate. The active layer is disposed on the first cladding layer. The second cladding layer is disposed on the active layer. The cap layer is disposed on the second cladding layer. The cap layer and the second cladding layer have a ridge waveguide and the ridge waveguide is a T-shape structure. The passivation layer is disposed on a luminous mesa. The dielectric layer is disposed on the passivation layer and covers a luminous facet.