Abstract: A double gate type thin film transistor includes a first electrode on a substrate; a gate insulating layer on the first gate electrode; a semiconductor layer on the gate insulating layer corresponding to the first gate electrode; an etch stop layer on the semiconductor layer; source and drain electrodes contacting both sides of the semiconductor layer, respectively, and spaced apart from each other on the etch stop layer; a passivation layer on the source and drain electrode; and a second gate electrode on the passivation layer and having a double-layered structure of a transparent electrode and an opaque electrode.

Abstract: A method for controlling screen layout in an electronic device includes recognizing a screen layout in which a plurality of application icons are arranged on a display, storing information regarding the screen layout along with a first tag, and when a screen layout change event occurs, displaying a changed screen layout according to the screen layout change event on the screen, and storing information regarding the changed screen layout along with a second tag. An electronic device includes a processor configured to detect a screen layout in which a plurality of application icons are arranged on a screen, and a first storage configured to store information regarding the detected screen layout along with a first tag, and wherein, when a screen layout change event occurs, the processor is configured to cause the first storage to store information regarding the changed screen layout along with a second tag.

Abstract: A double gate type thin film transistor includes a first electrode on a substrate; a gate insulating layer on the first gate electrode; a semiconductor layer on the gate insulating layer corresponding to the first gate electrode; an etch stop layer on the semiconductor layer; source and drain electrodes contacting both sides of the semiconductor layer, respectively, and spaced apart from each other on the etch stop layer; a passivation layer on the source and drain electrode; and a second gate electrode on the passivation layer and having a double-layered structure of a transparent electrode and an opaque electrode.