Abstract: Disclosed is a quasi-circulator using an asymmetric directional coupler. The quasi-circulator using the asymmetric directional coupler according to an embodiment of the present invention may enhance a characteristic of isolating a transmitting signal from a receiving signal with the same characteristic as transmitting signal loss of a symmetric directional coupler in the related art by arranging impedance of each line of a directional coupler asymmetrically.

Abstract: A heat radiation sheet includes a low-hardness insulating heat-radiation layer and a high-heat-radiation insulating layer. Each of the low-hardness insulating heat-radiation layer and the high-heat-radiation insulating layer is formed by mixing a thermoplastic elastomer (TPE), a thermally conductive filler, a flame retardant additive, a process oil, and an additive. A method of manufacturing a heat radiation sheet having a double-layered insulating structure, includes: a first step of forming a mixture by mixing a thermoplastic elastomer (TPE), a thermally conductive filler, a flame retardant additive, a process oil, and an additive; a second step of melt-extruding the mixture at a temperature of 120 ? to 300 ? by a melt extrusion apparatus to from a melt extrudate; a third step of cutting the melt extrudate into a pellet form; and a fourth step of sheeting through melt-extruding the pellet into a sheet form by a melt extrusion apparatus.

Abstract: Disclosed is a quasi-circulator using an asymmetric directional coupler. The quasi-circulator using the asymmetric directional coupler according to an embodiment of the present invention may enhance a characteristic of isolating a transmitting signal from a receiving signal with the same characteristic as transmitting signal loss of a symmetric directional coupler in the related art by arranging impedance of each line of a directional coupler asymmetrically.

Abstract: A double gate type thin film transistor includes a first electrode on a substrate; a gate insulating layer on the first gate electrode; a semiconductor layer on the gate insulating layer corresponding to the first gate electrode; an etch stop layer on the semiconductor layer; source and drain electrodes contacting both sides of the semiconductor layer, respectively, and spaced apart from each other on the etch stop layer; a passivation layer on the source and drain electrode; and a second gate electrode on the passivation layer and having a double-layered structure of a transparent electrode and an opaque electrode.

Abstract: A method for controlling screen layout in an electronic device includes recognizing a screen layout in which a plurality of application icons are arranged on a display, storing information regarding the screen layout along with a first tag, and when a screen layout change event occurs, displaying a changed screen layout according to the screen layout change event on the screen, and storing information regarding the changed screen layout along with a second tag. An electronic device includes a processor configured to detect a screen layout in which a plurality of application icons are arranged on a screen, and a first storage configured to store information regarding the detected screen layout along with a first tag, and wherein, when a screen layout change event occurs, the processor is configured to cause the first storage to store information regarding the changed screen layout along with a second tag.

Abstract: A double gate type thin film transistor includes a first electrode on a substrate; a gate insulating layer on the first gate electrode; a semiconductor layer on the gate insulating layer corresponding to the first gate electrode; an etch stop layer on the semiconductor layer; source and drain electrodes contacting both sides of the semiconductor layer, respectively, and spaced apart from each other on the etch stop layer; a passivation layer on the source and drain electrode; and a second gate electrode on the passivation layer and having a double-layered structure of a transparent electrode and an opaque electrode.