Abstract: Provided is a method for predicting perovskite synthesizability using a graph convolutional neural network and positive unlabeled learning, capable of predicting perovskite synthesizability by using a graph convolutional neutral network and positive unlabeled learning which is semi-supervised learning based on a labeled model using positive data and positive unlabeled data.

Abstract: An X-ray imaging apparatus includes an imaging device configured to capture a camera image of a target; a controller configured to stitch a plurality of X-ray images of respective divided regions of the target to generate one X-ray image of the target; and a display configured to display a settings window that provides a GUI for receiving a setting of an X-ray irradiation condition for the respective divided regions, and display the camera image in which positions of the respective divided regions are displayed.

Abstract: Disclosed are a backside illuminated image sensor and a method of manufacturing the same. More particularly, a backside illuminated image sensor and a method of manufacturing the backside illuminated image sensor include a light scattering portion in a substrate configured to converge a path of incident light to a photoelectric conversion structure, thereby preventing cross-talk between adjacent pixels and increasing light sensitivity.

Abstract: Disclosed are a frontside illuminated image sensor and a method of manufacturing the same. More particularly, a frontside illuminated image sensor and a method of manufacturing the frontside illuminated image sensor include a light scattering portion in a substrate, configured to increase a path of incident light, thereby preventing cross-talk between adjacent pixels and increasing light sensitivity.

Abstract: Disclosed are a backside illuminated image sensor and a method of manufacturing the same. More particularly, a backside illuminated image sensor and a method of manufacturing the backside illuminated image sensor include a plurality of sequential layers have different refractive indexes to extend a path of incident light passing through a lens, thereby increasing sensitivity.

Abstract: The present invention discloses a back contact solar cell. The back contact solar cell includes a semiconductor substrate having a front surface and a rear surface; a first conductive type semiconductor region having a first conductive type and a second conductive type semiconductor region having a second conductive type at an interval on the rear surface of the semiconductor substrate. Furthermore, the rear surface of the semiconductor substrate has a texturing structure at the interval between the first conductive type semiconductor region and the second conductive type semiconductor region.

Abstract: Provided are a single-photon avalanche diode (SPAD) pixel structure and a method of manufacturing the same. More particularly, provided are a SPAD pixel structure and a method of manufacturing the same, including an additional PN junction in a vertical or horizontal direction to increase photon detection efficiency and thus improve the sensitivity in an imaging device.

Abstract: Provided is a single-photon avalanche diode (SPAD) structure. More particularly, provided is a SPAD structure having an isolation structure for electrical and/or physical separation between a pixel area and a logic area.

Abstract: Provided are a single-photon avalanche diode (SPAD) pixel structure and a method of manufacturing the same. More particularly, provided are a SPAD pixel structure and a method of manufacturing the same, including an additional PN junction in a vertical or horizontal direction to increase photon detection efficiency and thus improve the sensitivity in an imaging device.

Abstract: Proposed is an indirect Time-of-Flight (ToF) structure. In the indirect ToF structure, an electric charge storage portion in which electric charge is temporarily stored is provided between a photoelectric conversion portion and a floating diffusion portion, thereby making it possible to perform Correlated Double Sampling (CDS) and to remove noise during readout after an integration time.

Abstract: A method of fabricating semiconductor packages includes forming an insulating polymer layer on a substrate to cover a plurality of conductive patterns on the substrate, planarizing the insulating polymer layer by pressing the insulating polymer layer downward by using at least one pressure member, and patterning the planarized insulating polymer layer to expose at least parts of the plurality of conductive patterns.

Abstract: A method of fabricating semiconductor packages includes forming an insulating polymer layer on a substrate to cover a plurality of conductive patterns on the substrate, planarizing the insulating polymer layer by pressing the insulating polymer layer downward by using at least one pressure member, and patterning the planarized insulating polymer layer to expose at least parts of the plurality of conductive patterns.

Abstract: ACMOS image sensor includes a pixel array having a plurality of pixels. Each of the plurality of pixels includes: a photogate structure configured to be controlled based on a first gate voltage; and a sensing transistor including a charge pocket region formed in a substrate region, the sensing transistor being configured to be controlled based on a second gate voltage. Based on the first gate voltage, the photogate structure is configured to integrate charges generated in response to light incident on the substrate region. The sensing transistor is configured to adjust at least one of a threshold voltage of the sensing transistor and a current flow in the sensing transistor according to charges transferred from the photogate structure to the charge pocket region based on a difference between the first gate voltage and the second gate voltage.

Abstract: The image sensor includes a pixel array including a plurality of unit pixels each including a single transistor and a photodiode connected to a body of the single transistor, a row driver block configured to enable one of a plurality of rows in the pixel array to enter a readout mode, and a readout block configured to sense and amplify a pixel signal output from each of a plurality of unit pixels included in the row that has entered the readout mode.

Abstract: A method of operating an image sensor includes: generating a pixel signal according to intensity of incident light; and generating a digital pixel signal based on a comparison between the pixel signal and at least one reference current. Accordingly, a current output from a 1T pixel in the image sensor is sensed such that the influence of noise is reduced and a pixel signal is sensed more precisely.

Abstract: A unit pixel includes a sensing transistor, a photo diode, and a reset drain region. The sensing transistor includes a reference active region, an output active region, and a gate. The gate is between the reference active region and the output active region to electrically connect the reference active region to the output active region based on a gate voltage. The reference active region and output active region are within a semiconductor substrate. The photo diode is under the gate within the semiconductor substrate. The reset drain region is within the semiconductor substrate and is electrically connected to the photo diode by the gate based on the gate voltage.

Abstract: An optical biosensor may include a biosensing unit, detection unit, and signal processing unit. The biosensing unit may be configured for receiving first and second optical signals (which are generated from a phase-modulated optical signal), outputting a sensing signal by transmitting the first optical signal via a first optical path that includes a sensing resonator, and outputting a reference signal by transmitting the second optical signal via a second optical path that includes a reference resonator. The detection unit may be configured for receiving the sensing signal and the reference signal, detecting a phase element of each of the sensing signal and the reference signal through a signal demodulation operation, and detecting a phase difference between the sensing signal and the reference signal according to the detected phase elements. The signal processing unit may be configured for calculating the concentration of a bio-material based on the detected phase difference.

Abstract: ACMOS image sensor includes a pixel array having a plurality of pixels. Each of the plurality of pixels includes: a photogate structure configured to be controlled based on a first gate voltage; and a sensing transistor including a charge pocket region formed in a substrate region, the sensing transistor being configured to be controlled based on a second gate voltage. Based on the first gate voltage, the photogate structure is configured to integrate charges generated in response to light incident on the substrate region. The sensing transistor is configured to adjust at least one of a threshold voltage of the sensing transistor and a current flow in the sensing transistor according to charges transferred from the photogate structure to the charge pocket region based on a difference between the first gate voltage and the second gate voltage.

Abstract: The image sensor includes a pixel array including a plurality of unit pixels each including a single transistor and a photodiode connected to a body of the single transistor, a row driver block configured to enable one of a plurality of rows in the pixel array to enter a readout mode, and a readout block configured to sense and amplify a pixel signal output from each of a plurality of unit pixels included in the row that has entered the readout mode.

Abstract: A binary complementary metal-oxide-semiconductor (CMOS) image sensor includes a pixel array and a readout circuit. The pixel array includes at least one pixel having a plurality of sub-pixels. The readout circuit is configured to quantize a pixel signal output from the pixel using a reference signal. The pixel signal corresponds to sub-pixel signals output from sub-pixels, from among the plurality of sub-pixels, activated in response to incident light.