Abstract: Provided are a semiconductor probe having a resistive tip, a method of fabricating the semiconductor probe, and a method of recording and reproducing information using the semiconductor probe. The semiconductor probe includes a tip and a cantilever. The tip is doped with first impurities. The cantilever has an end portion on which the tip is positioned. The tip includes a resistive area, and first and second semiconductor electrode areas. The resistive area is positioned at the peak of the tip and lightly doped with second impurities that are different from the first impurities. The first and second semiconductor electrode areas are heavily doped with the second impurities and contact the resistive area.

Abstract: Provided is a method of fabricating a semiconductor probe with a resistive tip. The method includes steps of forming a mask layer on a substrate doped with first impurities and forming first and second semiconductor electrode regions heavily doped with the second impurities on the substrate uncovered by the mask layer, annealing the first and second semiconductor electrode regions and diffusing the second impurities of the first and second semiconductor electrode regions to portions facing each other to form resistive regions lightly doped with the second impurities at the outer boundaries of the first and second semiconductor electrode regions, and patterning the mask layer in a predetermined shape and etching a portion of a top surface of the substrate not covered by the patterned mask layer to form a resistive tip.

Abstract: A ferroelectric recording medium and a writing method for the same are provided. The ferroelectric recording medium includes a ferroelectric layer which reverses its polarization when receiving a predetermined coercive voltage. A nonvolatile anisotrophic conduction layer is formed on the ferroelectric layer. A resistance of the anisotrophic conduction layer decreases when receiving a first voltage lower than the coercive voltage, and the resistance of the anisotrophic conduction layer increases when receiving a second voltage higher than the coercive voltage. Multi-bit information is stored by a combination of polarization states of the ferroelectric layer and the resistance of the anisotrophic conduction layer. Accordingly, multiple bits can be expressed on one domain of the ferroelectric recording medium.

Abstract: A semiconductor probe with a resistive tip and a method of fabricating the semiconductor probe. The resistive tip doped with a first impurity includes a resistive region formed at a peak thereof and lightly doped with a second impurity opposite in polarity to the first impurity, and first and second semiconductor regions formed on sloped sides thereof and heavily doped with the second impurity. The semiconductor probe includes the resistive tip, a cantilever having an end on which the resistive tip is disposed, a dielectric layer disposed on the cantilever and covering the resistive region, and a metal shield disposed on the dielectric layer and having an opening formed at a position corresponding to the resistive region.

Abstract: A magnetic logic device (MLD) and methods of manufacturing and operating an MLD are provided. The MLD includes: a first interconnection; a lower magnetic layer formed on the first interconnection, the lower magnetic layer having a magnetization direction fixed in a predetermined direction; a non-magnetic layer formed on the lower magnetic layer; an upper magnetic layer formed on the non-magnetic layer, the upper magnetic layer having a magnetization direction parallel or anti-parallel to the magnetization direction of the lower magnetic layer; and a second interconnection formed on the upper magnetic layer. A first current source is disposed between one end of the first interconnection and one end of the second interconnection and a second current source is disposed between the other end of the first interconnection and the other end of the second interconnection.

Abstract: Provided are a resistive memory device having a probe array and a method of manufacturing the same. The resistive memory device includes a memory part having a bottom electrode and a ferroelectric layer sequentially formed on a first substrate; a probe part having an array of resistive probes arranged on a second substrate, with the tips of the resistive probes facing the ferroelectric layer so as to write and read data on the ferroelectric layer; and a binding layer which grabs and fixes the resistive probes on or above the ferroelectric layer. The method of manufacturing the resistive memory device includes forming a bottom electrode and a ferroelectric layer sequentially on a first substrate; forming an array of resistive probes on a second substrate; and wafer level bonding the first substrate to the second substrate using a binding layer such that tips of the resistive probes face the ferroelectric layer.

Abstract: Provided is a ferroelectric recording medium including a ferroelectric recording layer formed of a polarization reversal ferroelectric material and an anisotropic conduction layer that covers the ferroelectric recording layer and changes into a conductor or a non-conductor based on external energy.

Abstract: Provided are a semiconductor probe, a method of manufacturing the same, and an apparatus and method for analyzing a semiconductor surface using the semiconductor probe. The semiconductor probe includes a semiconductor tip containing a low concentration of impurities and a cantilever having a conductive area formed in close proximity to the semiconductor tip attached at one end thereof and doped with a high concentration of impurities. The analysis apparatus and method uses high resolution, non-destructive measurement by forming a PN junction between the sample and the semiconductor probe, thereby enabling quantitative extraction of impurity concentration of the sample.

Abstract: A semiconductor probe with a resistive tip, and a method of fabricating the semiconductor probe.

Abstract: Provided is a method of fabricating a probe for a scanning probe microscope (SPM) having a field effect transistor (FET) channel structure utilizing a self-aligned fabrication. The provided method includes a first step of forming a first-shaped mask layer on a substrate and forming a source region and a drain region in regions of the substrate except for the mask layer; a second step of patterning a first-shaped photoresist in a perpendicular direction to the mask layer and performing an etching process to form a second-shaped mask layer; and a third step of etching the regions of the substrate except for the mask layer to form a probe. The provided method aligns the center of a tip with the center of a channel existing between the source region and the drain region to realize a tip having a size of tens of nanometers. Thus, a nano-device can be easily manufactured using the probe having the tip.

Abstract: Provided are a semiconductor probe having a resistive tip, a method of fabricating the semiconductor probe, and a method of recording and reproducing information using the semiconductor probe. The semiconductor probe includes a tip and a cantilever. The tip is doped with first impurities. The cantilever has an end portion on which the tip is positioned. The tip includes a resistive area, and first and second semiconductor electrode areas. The resistive area is positioned at the peak of the tip and lightly doped with second impurities that are different from the first impurities. The first and second semiconductor electrode areas are heavily doped with the second impurities and contact the resistive area.

Abstract: Provided is a method of fabricating a probe for a scanning probe microscope (SPM) having a field effect transistor (FET) channel structure utilizing a self-aligned fabrication. The provided method includes a first step of forming a first-shaped mask layer on a substrate and forming a source region and a drain region in regions of the substrate except for the mask layer; a second step of patterning a first-shaped photoresist in a perpendicular direction to the mask layer and performing an etching process to form a second-shaped mask layer; and a third step of etching the regions of the substrate except for the mask layer to form a probe. The provided method aligns the center of a tip with the center of a channel existing between the source region and the drain region to realize a tip having a size of tens of nanometers. Thus, a nano-device can be easily manufactured using the probe having the tip.

Abstract: An information storage medium in which charges and electric dipoles are coupled with one another. The information storage medium includes a substrate, an electrode layer formed on the substrate, a ferroelectric layer formed on the electrode layer, and an insulating layer formed on the ferroelectric layer. Accordingly, it is possible to stably record information on the information storage medium.

Abstract: A method of writing data on a storage device using a probe technique. In the method of writing data on a memory device including a resistive probe used for reading and writing of data, a ferroelectric writing medium on which data is written by the resistive probe, and a lower electrode disposed on a bottom surface of the ferroelectric writing medium, heat and an electric field are applied simultaneously to a domain of the ferroelectric writing medium, on which the data will be written, by applying a voltage to the resistive probe and the lower electrode.

Abstract: Provided is a two-axis actuator having a large stage area. The two-axis actuator includes a stage moving in two directions and connected to an upper part of an inertial part. The two-axis actuator is configured to maximize a stage area relative to the overall area of the actuator, thereby increasing the data storage capacity of the stage.

Abstract: A two-axis actuator having a large stage area and including includes a substrate, an anchor unit having sides approximately in a rectangular shape, fixed on the substrate, a plurality of first actuating parts actuating in a first direction and separated from the substrate within regions of both sides of the anchor unit, a plurality of second actuating parts actuating in a second direction between the first actuating parts, a rectangular shaped stage that actuates in the second direction, disposed above the second actuating parts, a third actuating part formed on the first actuating part, and elevated at a predetermined distance from the stage and the anchor unit, first direction deformable springs that support the first actuating part in inner parts of the anchor unit, and second direction deformable springs formed to fix the second actuating part in an inner part of the third actuating part.

Abstract: A high-density data storage medium, a method of manufacturing the data storage medium, a high-density data storage apparatus, and methods of writing data on, and reading and erasing data from the data storage medium by using the data storage apparatus are provided. The data storage medium includes a lower electrode, an insulation layer deposited on the lower electrode, a photoelectron emission layer deposited on the insulation layer and having a plurality of protrusions from which photoelectrons are emitted due to collisions between the protrusions and photons, and a dielectric layer deposited on the photoelectron emission layer and storing the photoelectrons emitted from the photoelectron emission layer.