Abstract: The present disclosure relates to a light emitting diode (LED) driving device that may expand a usable range of LED current and battery voltage by reducing heat generation of an integrated circuit, and an LED lighting device including the same, which may include a current controller that constantly controls an LED current flowing through an LED string and an IC heat dissipation part connected to a node between the LED string and the current controller to dissipate IC heat of the current controller, wherein when a battery voltage supplied to the LED string increases, the IC heat dissipation part reduces a first LED current flowing from the LED string to the current controller and simultaneously increases a second LED current flowing from the LED string to the current controller via the IC heat dissipation part, thereby reducing the IC heat generation of the current controller.

Abstract: A power semiconductor device includes a semiconductor layer formed of silicon carbide (SiC), a trench formed by etching the semiconductor layer, a gate formed in a manner that a partial region of the gate is buried in the trench and another partial region of the gate extends over the semiconductor layer, a shield region formed to surround a lower region of the trench, a well region disposed in the semiconductor layer to be in contact with a first side surface of the trench and an upper surface of the semiconductor layer, a source region disposed in the well region, and a shield connector formed to extend from an upper surface of the semiconductor layer to the shield region while contacting a second side surface opposite to the first side surface.

Abstract: A power semiconductor device includes a semiconductor layer of silicon carbide (SiC), at least one trench that extends in one direction, a gate insulating layer disposed on at least an inner wall of the at least one trench, at least one gate electrode layer disposed on the gate insulating layer, a drift region disposed in the semiconductor layer at least on one side of the at least one gate electrode layer, a well region disposed in the semiconductor layer to be deeper than the at least one gate electrode layer, a source region disposed in the well region, and at least one channel region disposed in the semiconductor layer of one side of the at least one gate electrode layer between the drift region and the source region.

Abstract: In one example, a semiconductor device can comprise a substrate, a device stack, first and second internal interconnects, and an encapsulant. The substrate can comprise a first and second substrate sides opposite each other, a substrate outer sidewall between the first substrate side and the second substrate side, and a substrate inner sidewall defining a cavity between the first substrate side and the second substrate side. The device stack can be in the cavity and can comprise a first electronic device, and a second electronic device stacked on the first electronic device. The first internal interconnect can be coupled to the substrate and the device stack. The encapsulant can cover the substrate inner sidewall and the device stack and can fill the cavity. Other examples and related methods are disclosed herein.

Abstract: An X-ray imaging apparatus includes an imaging device configured to capture a camera image of a target; a controller configured to stitch a plurality of X-ray images of respective divided regions of the target to generate one X-ray image of the target; and a display configured to display a settings window that provides a GUI for receiving a setting of an X-ray irradiation condition for the respective divided regions, and display the camera image in which positions of the respective divided regions are displayed.

Abstract: A pre-folding apparatus for a pouch-type battery includes: a main frame, a rib, a pusher support portion, and a pusher. The main frame includes a pair of columns and a horizontal bar configured to connect upper portions of the columns. The rib installed to be fixed across the pair of columns under the horizontal bar has a forming protrusion whose upper end is flat. The pusher support portion disposed above the rib includes a linear driving portion configured to move the pusher support portion in a vertical direction along the columns. Finally, the pusher installed at the pusher support portion is aligned with the forming protrusion.

Abstract: A display that includes a display panel and a window laminated with the display panel is presented. The display panel may include: a main panel region including a first side extending in a first direction and a second side extending in a second direction crossing the first direction; a first sub-panel region that is in contact with the first side and is bent; and a second sub-panel region that is in contact with the second side and is bent. A panel corner part of the main panel region adjacent to the first sub-panel region and the second sub-panel region is rounded.

Abstract: A method of generating a moving viewpoint motion picture, which is performed by a processor that executes at least one instruction stored in a memory, may comprise: obtaining an input image; generating a trimap from the input image; generating a depth map using the input image; generating a foreground mesh/texture map model based on a foreground alpha map obtained based on the trimap and foreground depth information obtained based on the trimap and the depth map; and generating a moving viewpoint motion picture based on the foreground mesh/texture map model.

Abstract: Proposed are a substrate processing apparatus having improved substrate drying performance by separately providing a chemical liquid supply nozzle and a gas supply nozzle; and a substrate processing method.

Abstract: A processor-implemented method includes generating a preprocessed infrared (IR) image by performing first preprocessing based on an IR image including an object; generating a preprocessed depth image by performing second preprocessing based on a depth image including the object; and determining whether the object is a genuine object based on the preprocessed IR image and the preprocessed depth image

Abstract: The battery pack includes a plurality of battery module accommodating a plurality of battery cells; a pack case in which the plurality of battery modules are stacked in a horizontal direction; and a retention bar extending along the stacking direction of the battery modules and is coupled to the pack case while pressing an upper surface of opposite sides of the stacked battery modules.

Abstract: A coil component is provided. The coil component includes a body having fifth and sixth surfaces opposing each other, first and second surfaces respectively connecting the fifth and sixth surfaces of the body and opposing each other, and third and fourth surfaces respectively connecting the first and second surfaces of the body and opposing each other in one direction, a recess disposed in an edge between one of the first and second surfaces of the body and the sixth surface of the body, a coil portion disposed inside the body and exposed through the recess, and an external electrode including a connection portion disposed in the recess and connected to the coil portion, and a pad portion disposed on one surface of the body. A length of the pad portion in the one direction is greater than a length of the connection portion in the one direction.

Abstract: A power semiconductor device includes a plurality of gate electrodes configured to be recessed from a first surface of a semiconductor substrate to a second surface of the semiconductor substrate, the second surface being opposite to the first surface, an emitter region configured to make contact with a trench and the first surface, being provided between respective ones of the plurality of gate electrodes, and including impurities of a first conductive type, a collector region configured to make contact with the second surface, and including second impurities of a second conductive type opposite to the first conductive type, a floating region extending toward the second surface in an extension direction of the trench while surrounding a bottom surface of the trench, and including the second impurities, and a trench emitter region interposed between the plurality of gate electrodes in the trench.

Abstract: Disclosed is a power semiconductor device that includes a gate electrode recessed from a first surface of a semiconductor substrate to a second surface, disposed opposite to the first surface, of the semiconductor substrate, an emitter region, including impurities in a first conductive type, disposed in contact with a trench, in which the gate electrode is disposed, and the first surface, a collector region, including impurities in a second conductive type opposite to the first conductive type, disposed in contact with the second surface, a floating region, including the impurities in the second conductive type, extending toward the second surface in an extension direction of the trench while surrounding a bottom surface of the trench, and a trench emitter region interposed under the gate electrode in the trench.

Abstract: According to various embodiments, an image analysis server for determining whether an image is suitable for skin analysis may include a DB management unit for obtaining a captured image from a skin measurement device and storing the captured image; a user detector for detecting a user's face based on the obtained image; an image suitability determination unit for determining whether the obtained image is suitable for skin analysis; a skin analyzer for analyzing skin corresponding to the detected user's face based on the image determined to be suitable for skin analysis; and a service providing unit for calculating a skin score according to the analysis and providing the calculated skin score to a user terminal.

Abstract: A power semiconductor device includes a semiconductor layer, a ladder-shaped trench recessed a specific depth from a surface of the semiconductor layer into the semiconductor layer and including a pair of lines having a first depth and a plurality of connectors connected between the pair of lines and having a second depth shallower than the first depth, a well region defined in the semiconductor layer between the pair of lines and between the plurality of connectors of the trench, a floating region defined in the semiconductor layer outside the pair of lines of the trench, a gate insulating layer disposed on an inner wall of the trench, and a gate electrode layer disposed on the gate insulating layer to fill the trench and including a first portion in which the pair of lines is filled and a second portion in which the plurality of connectors is filled. A depth of the second portion of the gate electrode layer is shallower than a depth of the first portion of the gate electrode layer.

Abstract: An aerosol delivering device includes a case that is configured to accommodate an aerosol generating source and includes a discharge hole that is configured to discharge an aerosol generated by the aerosol generating source; a rotation body that is configured to rotate with respect to the case and includes a plurality of chambers sequentially arranged in a rotation direction, each of the plurality of chambers accommodating a medium and configured to pass the aerosol therethrough; and a position limiter that is configured to maintain a rotational position of the rotation body with respect to the case so that a position of at least one of the plurality of chambers corresponds to a position of the discharge hole.

Abstract: The inventive concept provides a liquid treating apparatus.

Abstract: A power semiconductor device includes a semiconductor layer, first trenches recessed into the semiconductor layer from a surface of the semiconductor layer, a drift region, having a first conductivity type, disposed in the semiconductor layer to extend from a lower side the first trenches to between the first trenches such that a vertical charge transport path is provided, a well region disposed in the semiconductor layer on the drift region between the first trenches and having a second conductivity type, an emitter region disposed on the well region and having the first conductivity type, a floating electrode layer disposed in each of the first trenches, a second trench extending through the well region to be in contact with the drift region, and a gate electrode layer disposed in the second trench.

Abstract: A power semiconductor device includes: a semiconductor layer including a main cell region, a sensor region, and an insulation region between the main cell region and the sensor region; a plurality of power semiconductor transistors disposed on the main cell region; a plurality of current sensor transistors disposed on the sensor region; and a protection resistance layer disposed on the semiconductor layer across the insulation region so that at least a portion of the plurality of power semiconductor transistors and at least a portion of the plurality of current sensor transistors are connected to each other under an abnormal operation condition.