Patents by Inventor Ju-hwan LIM

Ju-hwan LIM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12042787
    Abstract: In the present disclosure, a heterogeneous nickel-based oligomerization catalyst in which nickel in the form of single atom is loaded on an Al-mesoporous silicate support by ion exchange and a method for producing the same, and a method for oligomerizing light olefins, specifically C4 olefins using the catalyst are described.
    Type: Grant
    Filed: November 29, 2019
    Date of Patent: July 23, 2024
    Assignees: SK Innovation Co., Ltd., SK Geo Centric Co., Ltd.
    Inventors: Jae Suk Choi, Ka Young Kim, Hee Soo Kim, Ju Hwan Im, Dae Hyun Choo, Ho Won Lee, Je Mi Lim
  • Patent number: 10855114
    Abstract: Disclosed is a wireless power transmission system including a microstrip patch antenna. More particularly, a microstrip patch antenna according to an embodiment of the present disclosure includes a substrate, a patch disposed on the substrate, and a plurality of protrusions with a conical shape disposed on the patch.
    Type: Grant
    Filed: December 20, 2018
    Date of Patent: December 1, 2020
    Assignee: UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY
    Inventors: Bom Son Lee, Sang Woong Yoon, Ju Hwan Lim, Gun Young Kim
  • Publication number: 20190199138
    Abstract: Disclosed is a wireless power transmission system including a microstrip patch antenna. More particularly, a microstrip patch antenna according to an embodiment of the present disclosure includes a substrate, a patch disposed on the substrate, and a plurality of protrusions with a conical shape disposed on the patch.
    Type: Application
    Filed: December 20, 2018
    Publication date: June 27, 2019
    Applicant: UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY
    Inventors: Bom Son LEE, Sang Woong YOON, Ju Hwan LIM, Gun Young KIM
  • Patent number: 9576916
    Abstract: A high frequency circuit includes a first electronic device, a second electronic device, and a graphene interconnection unit, where at least one of a trench and a via is defined under the graphene interconnection unit.
    Type: Grant
    Filed: July 6, 2012
    Date of Patent: February 21, 2017
    Assignees: SAMSUNG ELECTRONICS CO., LTD., INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY
    Inventors: Hyeon-jin Shin, Jae-young Choi, Seong-chan Jun, Whan-kyun Kim, Hyung-seo Yoon, Ju-yeong Oh, Ju-hwan Lim
  • Publication number: 20130176698
    Abstract: A high frequency circuit includes a first electronic device, a second electronic device, and a graphene interconnection unit including graphene and which connects the first and second electronic devices, where an interlayer distance of the graphene is greater than or equal to about 0.34 nanometer.
    Type: Application
    Filed: July 6, 2012
    Publication date: July 11, 2013
    Applicants: Industry-Academic Cooperation Foundation, Yonsei University, SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyeon-jin SHIN, Jae-young CHOI, Seong-chan JUN, Whan-kyun KIM, Hyung-seo YOON, Ju-yeong OH, Ju-hwan LIM
  • Publication number: 20130175676
    Abstract: A high frequency circuit includes a first electronic device, a second electronic device, and a graphene interconnection unit, where at least one of a trench and a via is defined under the graphene interconnection unit.
    Type: Application
    Filed: July 6, 2012
    Publication date: July 11, 2013
    Applicants: Industry-Academic Cooperation Foundation, Yonsei University, SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyeon-jin SHIN, Jae-young CHOI, Seong-chan JUN, Whan-kyun KIM, Hyung-seo YOON, Ju-yeong OH, Ju-hwan LIM