Patents by Inventor Ju-hwan LIM

Ju-hwan LIM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250034731
    Abstract: Disclosed are an electrochemical hybrid catalyst that has a configuration in which two species of single atomic metals, that is, nickel (Ni) and iron (Fe), each bonded to (coordinated with) nitrogen in a nitrogen-doped carbon nanostructure, are adjacent to each other and are indirectly linked via nitrogen to form a catalyst site or an active site and thus exhibits high carbon monoxide selectivity and current density at a low overpotential during reduction reaction for converting carbon dioxide into carbon monoxide, and a carbon dioxide conversion system using the same.
    Type: Application
    Filed: May 9, 2024
    Publication date: January 30, 2025
    Inventors: Hyun Su HAN, Ju Hwan IM, Seung Ok LEE, Tae Kyoung LEE, Soo Bean KIM, Tae Hong SEOK, Yun Ji LIM
  • Patent number: 12205746
    Abstract: A coil component includes a body having one surface and the other surface, opposing each other, both lateral surfaces respectively connecting the one surface and the other surface and opposing each other, and both end surfaces respectively connecting the both lateral surfaces and opposing each other; a coil unit disposed in the body; a first external electrode and a second external electrode, respectively connected to the coil unit and disposed to be spaced apart from each other on the one surface of the body; and a first insulating layer covering the other surface of the body, the both lateral surfaces of the body, and the both end surfaces of the body.
    Type: Grant
    Filed: February 1, 2021
    Date of Patent: January 21, 2025
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Ju Hwan Yang, Seung Mo Lim, Tae Jun Choi, Byung Soo Kang, Yong Hui Li, Tai Yon Cho, No Il Park, Yoon Mi Cha, Boum Seock Kim, Seung Min Lee
  • Patent number: 10855114
    Abstract: Disclosed is a wireless power transmission system including a microstrip patch antenna. More particularly, a microstrip patch antenna according to an embodiment of the present disclosure includes a substrate, a patch disposed on the substrate, and a plurality of protrusions with a conical shape disposed on the patch.
    Type: Grant
    Filed: December 20, 2018
    Date of Patent: December 1, 2020
    Assignee: UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY
    Inventors: Bom Son Lee, Sang Woong Yoon, Ju Hwan Lim, Gun Young Kim
  • Publication number: 20190199138
    Abstract: Disclosed is a wireless power transmission system including a microstrip patch antenna. More particularly, a microstrip patch antenna according to an embodiment of the present disclosure includes a substrate, a patch disposed on the substrate, and a plurality of protrusions with a conical shape disposed on the patch.
    Type: Application
    Filed: December 20, 2018
    Publication date: June 27, 2019
    Applicant: UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY
    Inventors: Bom Son LEE, Sang Woong YOON, Ju Hwan LIM, Gun Young KIM
  • Patent number: 9576916
    Abstract: A high frequency circuit includes a first electronic device, a second electronic device, and a graphene interconnection unit, where at least one of a trench and a via is defined under the graphene interconnection unit.
    Type: Grant
    Filed: July 6, 2012
    Date of Patent: February 21, 2017
    Assignees: SAMSUNG ELECTRONICS CO., LTD., INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY
    Inventors: Hyeon-jin Shin, Jae-young Choi, Seong-chan Jun, Whan-kyun Kim, Hyung-seo Yoon, Ju-yeong Oh, Ju-hwan Lim
  • Publication number: 20130176698
    Abstract: A high frequency circuit includes a first electronic device, a second electronic device, and a graphene interconnection unit including graphene and which connects the first and second electronic devices, where an interlayer distance of the graphene is greater than or equal to about 0.34 nanometer.
    Type: Application
    Filed: July 6, 2012
    Publication date: July 11, 2013
    Applicants: Industry-Academic Cooperation Foundation, Yonsei University, SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyeon-jin SHIN, Jae-young CHOI, Seong-chan JUN, Whan-kyun KIM, Hyung-seo YOON, Ju-yeong OH, Ju-hwan LIM
  • Publication number: 20130175676
    Abstract: A high frequency circuit includes a first electronic device, a second electronic device, and a graphene interconnection unit, where at least one of a trench and a via is defined under the graphene interconnection unit.
    Type: Application
    Filed: July 6, 2012
    Publication date: July 11, 2013
    Applicants: Industry-Academic Cooperation Foundation, Yonsei University, SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyeon-jin SHIN, Jae-young CHOI, Seong-chan JUN, Whan-kyun KIM, Hyung-seo YOON, Ju-yeong OH, Ju-hwan LIM