Patents by Inventor Ju-hyuck Chung

Ju-hyuck Chung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods of forming titanium nitride composite layers using composite gases having increasing TiCl4 to NH3 ratios
    Patent number: 6291342
    Abstract: A method of forming a multilayer titanium nitride film hardly containing any Cl component by a multiple step chemical vapor deposition method, and a method of manufacturing a semiconductor device using the same are provided. In the present invention, a multilayer TiN film is formed by multiple step chemical vapor deposition (CVD) on a semiconductor substrate on which an underlayer is formed. In order to form the multilayer TiN film, an underlayer protective TiN film is formed by forming a first TiN film on the underlayer and NH3 annealing the first TiN film. A main TiN film is formed by forming a second TiN film on the underlayer protective TiN film and NH3 annealing the second TiN film. A source gas used in order to form the first TiN film has a smaller TiCl4 to NH3 gas flow ratio than a source gas for forming the second TiN film. In order to apply the multilayer TiN film to the fabrication of the semiconductor device, an insulating film having a contact hole is formed on a semiconductor substrate.
    Type: Grant
    Filed: January 23, 2001
    Date of Patent: September 18, 2001
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jang-eun Lee, Ju-hyuck Chung, Tae-wook Seo
  • Methods of forming titanium nitride composite layers using composite gases having increasing TiC14 to NH3 ratios
    Publication number: 20010002334
    Abstract: A method of forming a multilayer titanium nitride film hardly containing any Cl component by a multiple step chemical vapor deposition method, and a method of manufacturing a semiconductor device using the same are provided. In the present invention, a multilayer TiN film is formed by multiple step chemical vapor deposition (CVD) on a semiconductor substrate on which an underlayer is formed. In order to form the multilayer TiN film, an underlayer protective TiN film is formed by forming a first TiN film on the underlayer and NH3 annealing the first TiN film. A main TiN film is formed by forming a second TiN film on the underlayer protective TiN film and NH3 annealing the second TiN film. A source gas used in order to form the first TiN film has a smaller TiCl4 to NH3 gas flow ratio than a source gas for forming the second TiN film. In order to apply the multilayer TiN film to the fabrication of the semiconductor device, an insulating film having a contact hole is formed on a semiconductor substrate.
    Type: Application
    Filed: January 23, 2001
    Publication date: May 31, 2001
    Inventors: Jang-eun Lee, Ju-hyuck Chung, Tae-wook Seo
  • Method of forming multilayer titanium nitride film by multiple step chemical vapor deposition process and method of manufacturing semiconductor device using the same
    Patent number: 6207557
    Abstract: A method of forming a multilayer titanium nitride film hardly containing any Cl component by a multiple step chemical vapor deposition method, and a method of manufacturing a semiconductor device using the same are provided. In the present invention, a multilayer TiN film is formed by multiple step chemical vapor deposition (CVD) on a semiconductor substrate on which an underlayer is formed. In order to form the multilayer TiN film, an underlayer protective TiN film is formed by forming a first TiN film on the underlayer and NH3 annealing the first TiN film. A main TiN film is formed by forming a second TiN film on the underlayer protective TiN film and NH3 annealing the second TiN film. A source gas used in order to form the first TiN film has a smaller TiCl4 to NH3 gas flow ratio than a source gas for forming the second TiN film. In order to apply the multilayer TiN film to the fabrication of the semiconductor device, an insulating film having a contact hole is formed on a semiconductor substrate.
    Type: Grant
    Filed: July 19, 1999
    Date of Patent: March 27, 2001
    Assignee: Samsung Electronics Co., Inc.
    Inventors: Jang-eun Lee, Ju-hyuck Chung, Tae-wook Seo