Abstract: A capacitor type humidity sensor may include a semiconductor substrate comprising a humidity sensing region and a peripheral circuit region, a sensing capacitor disposed on the humidity sensing region and the sensing capacitor comprising a humidity sensitive layer, a dielectric layer made of a material different than from the humidity sensitive layer, and a reference capacitor configured to provide a reference capacitance value, wherein the sensing capacitor and the reference capacitor are disposed on different planes from each other. A reference capacitor is disposed at an arbitrary region under a sensing capacitor among a humidity sensing region or at a peripheral circuit region. The reference capacitor is a metal-insulator-metal (MIM) capacitor or a polysilicon-insulator-polysilicon (PIP) capacitor.

Abstract: A capacitor type humidity sensor consisting of a humidity sensing region or a peripheral circuit region is provided. A capacitor type humidity sensor may include a semiconductor substrate comprising a humidity sensing region and a peripheral circuit region, a sensing capacitor disposed on the humidity sensing region and the sensing capacitor comprising a humidity sensitive layer, a dielectric layer made of a material different than from the humidity sensitive layer, and a reference capacitor configured to provide a reference capacitance value, wherein the sensing capacitor and the reference capacitor are disposed on different planes from each other. A reference capacitor is disposed at an arbitrary region under a sensing capacitor among a humidity sensing region or at a peripheral circuit region. The reference capacitor is a metal-insulator-metal (MIM) capacitor or a polysilicon-insulator-polysilicon (PIP) capacitor.