Abstract: A compensation film satisfies Inequalities 1 and 2, and an antireflective film and a display device are provided with the compensation film. 0.90 ? R e ? ( ?° ) + R e ? ( - ?° ) 2 ? ? R e ? ( 0 ? ° ) ? 1.20 , [ Inequality ? ? 1 ] where, in Inequality 1, Re (?°) is in-plane retardation of the compensation film in respective tilting direction at ?° with respect to the direction perpendicular to the optical axis of the compensation film, and Re(450 nm)<Re(550 nm)<Re(650 nm),??[Inequality 2] where, in Inequality 2, Re (450 nm), Re (550 nm) and Re (650 nm) are in-plane retardation of the compensation film in the direction perpendicular to the optical axis of the compensation film for incident light having a wavelength of 450 nanometers, 550 nanometers and 650 nanometers, respectively.

Abstract: Disclosed herein are a device and a method for changing a setting value of electric power equipment. The method for changing a setting value of electric power equipment, includes transmitting a data request signal including a predetermined communication address and receiving a response signal corresponding to the data request signal from a slave communication module corresponding to the communication address using the serial communication network, determining whether communication between the master communication module and the slave communication module is established normally on the basis of the data request signal and the response signal, receiving, from the response signal, model information of a slave communication module in which a setting value change event occurs among slave communication modules of which communications are established normally, and discriminating and displaying, among the slave communication modules of which the communications are established normally, a slave communication module.

Abstract: A variable resistance memory device includes a metal interconnection layer on a substrate, an interlayer insulating layer on the metal interconnection layer and defining a contact hole for exposing a portion of the metal interconnection layer, a barrier metal layer including a plurality of sub-barrier metal layers inside the contact hole, a plug metal layer on the barrier metal layer and burying the contact hole, and a variable resistance structure on the barrier metal layer and the plug metal layer.

Abstract: A magnetic memory device includes a buffer layer on a substrate, a magnetic tunnel junction structure including a fixed layer structure, a tunnel barrier, and a free layer that are sequentially arranged on the buffer layer, and a spin-orbit torque (SOT) structure on the magnetic tunnel junction structure and including a topological insulator material, wherein the free layer includes a Heusler material.

Abstract: In a method of manufacturing a variable resistance memory device, an MTJ structure layer is formed on a substrate. The MTJ structure layer is etched in an etching chamber to form an MTJ structure. The substrate having the MTJ structure thereon is transferred to a deposition chamber through a transfer chamber. A protection layer covering a sidewall of the MTJ structure is formed in the deposition chamber. The etching chamber, the transfer chamber, and the deposition chamber are kept in a high vacuum state equal to or more than about 10?8 Torr.

Abstract: A test pattern group includes a plurality of test patterns. Each of the plurality of test patterns includes a substrate including a first region and a second region, a first fin group and a second fin group each including fins extending on the first region of the substrate and the second region of the substrate. a first gate structure and a second gate structure each positioned on the first fin group and formed to intersect with the fins of the first fin group and the second fin group, a first source/drain contact formed on a first source/drain, a second source/drain contact formed on a second source/drain, a first gate contact formed on the first gate structure, and a second gate contact formed on the second gate structure. The number of fins included in the first fin group is greater than the number of fins included in the second fin group.

Abstract: A liquid crystal display includes a light source and a liquid crystal panel, wherein the liquid crystal panel includes a first substrate on the light source, a second substrate facing the first substrate, a liquid crystal layer between the first substrate and the second substrate, a color conversion layer between the second substrate and the liquid crystal layer, and including a light emitting element configured to receive a first visible light from the light source and emit a second visible light, a first polarizing layer between the liquid crystal layer and the color conversion layer, and a first phase difference layer between the liquid crystal layer and the first polarizing layer.

Abstract: A method of synthesizing aluminum nitride, the method includes: preparing mixed powder containing 0.5 to 8 wt % of zinc powder, 0.01 to 2 wt % of magnesium powder, 0.01 to 1 wt % of silicon powder, 0.01 to 1 wt % of copper powder, and a balanced amount of aluminum powder; preparing a feedstock of the mixed powder blended and filled with thermoplastic organic binder, by pressured kneading the mixed powder and the thermoplastic organic binder; forming granules of the feedstock by crushing the feedstock or forming a molded body of the feedstock via a powder molding method; and debinding the granules or the molded body by heating under a nitrogen gas atmosphere, and then performing direct nitridation between aluminum and a nitrogen gas at a temperature higher than a debinding temperature.

Abstract: A method of detecting failure of a semiconductor device includes forming an active fin on an active region of a substrate, the active fin extending in a first direction, forming a gate structure on the active fin, the gate structure extending in a second direction intersecting the first direction, forming source/drain layers on respective portions of the active fins at opposite sides of the gate structure, forming a wiring to be electrically connected to the source/drain layers, and applying a voltage to measure a leakage current between the source/drain layers. Only one or two active fins may be formed on the active region. Only one or two gate structures may be formed on the active fin.

Abstract: A test element group includes a test element including a plurality of test transistors connected in series between a first node and a second node, the second node being connected to a ground node; a first transistor connected between the first node and a power supply node; and a second transistor configured to generate an output current, proportional to a voltage at the first node, and connected to the first node and the power supply node.

Abstract: A retardation film including a retardation coating layer including a polyimide and a solvent, wherein the solvent has a vapor pressure of less than about 15 Torr at 20° C. and a solubility parameter satisfying Relationship Formula 1.

Abstract: A high-solid coating composition may include about 70 wt % to about 80 wt % of an acrylic resin; and about 15 wt % to about 21 wt % of a solvent, wherein a content of non-volatile components (NVs) is about 55 wt % to about 60 wt %, a solid by volume ratio (SVR) is about 50% to about 55%, and a combination factor (CF) value being an appearance evaluation index is about 78% or more.

Abstract: A voltage generator includes a pulse circuit and a slope circuit. The pulse circuit is to apply voltages of three different levels to an output terminal and the slope circuit is to apply a slope voltage to the output terminal. The slope circuit includes an inductor to take current out of a capacitive load connected to the output terminal.

Abstract: A method of detecting failure of a semiconductor device includes forming an active fin on an active region of a substrate, the active fin extending in a first direction, forming a gate structure on the active fin, the gate structure extending in a second direction intersecting the first direction, forming source/drain layers on respective portions of the active fins at opposite sides of the gate structure, forming a wiring to be electrically connected to the source/drain layers, and applying a voltage to measure a leakage current between the source/drain layers. Only one or two active fins may be formed on the active region. Only one or two gate structures may be formed on the active fin.

Abstract: A resource management method of an electronic apparatus according to an example embodiment includes storing resource information including at least one resource category for assorting hardware resources and software resources by type and an attribute category indicating attribute information of resources included in the at least one resource category in a memory of the electronic apparatus, and in response to an application requesting a specific resource, allocating the specific resource to the application based on the resource information.

Abstract: An organic light emitting diode device includes an organic light emitting display panel and a circular polarizing plate disposed on the organic light emitting display panel and including a polarizer and a compensation film, where a retardation of the compensation film in a first direction is determined based on a retardation of the organic light emitting display panel in the first direction.

Abstract: A test element group includes a test element including a plurality of test transistors connected in series between a first node and a second node, the second node being connected to a ground node; a first transistor connected between the first node and a power supply node; and a second transistor configured to generate an output current, proportional to a voltage at the first node, and connected to the first node and the power supply node.

Abstract: A muffler having a movable baffle may include a housing where an input pipe into which exhaust gas is flowed from an engine and an output pipe through which the exhaust gas is expelled to atmosphere are disposed, a baffle which is configured to be slidable along the longitudinal direction of the housing and divides the space of the housing, baffle moving means for moving the baffle to an arbitrary position within a predetermined range along the longitudinal direction of the housing, and a controller which data for determining whether to move the baffle or not is input thereto when the engine is driven, determines whether to move the baffle or not by use of the input data and controls the baffle moving means when the baffle is determined to be moved.

Abstract: A liquid crystal display includes a lower substrate and an upper substrate facing each other, a liquid crystal layer disposed between the lower substrate and the upper substrate, a color conversion layer disposed on the liquid crystal layer, a first polarizing layer and a first phase difference layer disposed between the liquid crystal layer and the color conversion layer, and a second polarizing layer and a second phase difference layer disposed between a light source and the lower substrate, wherein the first phase difference layer has a refractive index satisfying Inequality 1 and the second phase difference layer has refractive indexes satisfying Inequality 2. nx1?ny1?nz1??[Inequality 1] nx2>nz2>ny2??[Inequality 2] In Inequalities 1 and 2, nx1, nx2, ny1, ny2, nz1, and nz2 are the same in the detailed description.

Abstract: In a method of manufacturing a variable resistance memory device, an MTJ structure layer is formed on a substrate. The MTJ structure layer is etched in an etching chamber to form an MTJ structure. The substrate having the MTJ structure thereon is transferred to a deposition chamber through a transfer chamber. A protection layer covering a sidewall of the MTJ structure is formed in the deposition chamber. The etching chamber, the transfer chamber, and the deposition chamber are kept in a high vacuum state equal to or more than about 10?8 Torr.