Abstract: A small-sized on-chip complementary metal-oxide semiconductor (CMOS) Power Amplifier having improved efficiency is provided herein. The on-chip CMOS power amplifier is capable of improving efficiency and maximizing output thereof by enhancing a K factor, which may cause a problem in a power amplifier having a distributed active transformer structure. The on-chip CMOS power amplifier having an improved efficiency and being fabricated in a small size, the on-chip CMOS power amplifier includes a primary winding located at a first layer, secondary windings located at a second layer, which is an upper part of the first layer, the secondary windings being located corresponding to a position of the primary winding, and a cross section for coupling the second windings with each other.

Abstract: Example embodiments may provide a CMOS image sensor and example methods of forming the same. Example embodiment CMOS image sensors may include a transfer gate insulating pattern between a transfer gate and an active region. A photodiode region and/or a floating doped region may be in the active region at either side of the transfer gate. The transfer gate insulating pattern may include a first part adjacent to the photodiode region and/or a second part adjacent to the floating doped region. The first part may be thicker than the second part.

Abstract: A complementary metal-oxide semiconductor (CMOS) image sensor and a method of driving the CMOS image sensor that can reduce the number of devices required by each of a plurality of pixels and can stably drive the pixels, in which each of the pixels includes a photodiode that converts light energy into an electrical signal, a transfer transistor that transmits photocarriers stored in the photodiode to a floating diffusing region, a drive transistor that has a gate connected to the floating diffusion region and drives a voltage signal according to a voltage of the floating diffusion region, the voltage signal being output to an external device, and a capacitive device that is connected between a control voltage source and the floating diffusion region and, when a sensing operation of a corresponding pixel is terminated, deselects the pixel by altering the voltage of the floating diffusion region according to a control voltage provided by the control voltage source.

Abstract: A pixel which may prevent the voltage of a floating diffusion region of the pixel from being outside a desired or predetermined driving voltage range by adjusting the equivalent capacitance of the floating diffusion region may be provided. The pixel may include a photodiode which may convert light energy into photocarriers, a transfer transistor which may transfer the photocarriers accumulated in the photodiode to a floating diffusion region, a select transistor which may transmit a data signal to the exterior in response to a selection control signal, the transmitted data signal having a voltage which may vary according to the voltage of the floating diffusion region, and/or at least one capacitor which may be connected between the floating diffusion region and the select transistor and which may adjust the equivalent capacitance of the floating diffusion region.

Abstract: An apparatus and method for providing multimedia contents is provided. The apparatus includes an analyzing unit that analyzes a quantity ratio corresponding to a type of first multimedia content included in an album, a mood code generating unit that generates a mood code corresponding to the quantity ratio as the analyzed result, a content abstracting unit that abstracts a list of second multimedia content corresponding to the generated mood code, and a sending/receiving unit that sends at least one of the list and the second multimedia content included in the list.

Abstract: A small-sized on-chip complementary metal-oxide semiconductor (CMOS) Power Amplifier having improved efficiency is provided herein. The on-chip CMOS power amplifier is capable of improving efficiency and maximizing output thereof by enhancing a K factor, which may cause a problem in a power amplifier having a distributed active transformer structure. The on-chip CMOS power amplifier having an improved efficiency and being fabricated in a small size, the on-chip CMOS power amplifier includes a primary winding located at a first layer, secondary windings located at a second layer, which is an upper part of the first layer, the secondary windings being located corresponding to a position of the primary winding, and a cross section for coupling the second windings with each other.