Abstract: A processor-implemented method includes generating a preprocessed infrared (IR) image by performing first preprocessing based on an IR image including an object; generating a preprocessed depth image by performing second preprocessing based on a depth image including the object; and determining whether the object is a genuine object based on the preprocessed IR image and the preprocessed depth image

Abstract: A coil component is provided. The coil component includes a body having fifth and sixth surfaces opposing each other, first and second surfaces respectively connecting the fifth and sixth surfaces of the body and opposing each other, and third and fourth surfaces respectively connecting the first and second surfaces of the body and opposing each other in one direction, a recess disposed in an edge between one of the first and second surfaces of the body and the sixth surface of the body, a coil portion disposed inside the body and exposed through the recess, and an external electrode including a connection portion disposed in the recess and connected to the coil portion, and a pad portion disposed on one surface of the body. A length of the pad portion in the one direction is greater than a length of the connection portion in the one direction.

Abstract: An image sensor having a shield including, for example, a metal, is above an electrical charge storage element in a pixel region to block light incident toward the electrical charge storage element, thereby making it possible to reduce or prevent reading a charge value including leakage charge introduced to the electrical charge storage element, and thus adversely affecting an image result.

Abstract: An image sensor having a shield including, for example, a metal, is above an electrical charge storage element in a pixel region to block light incident toward the electrical charge storage element, thereby making it possible to reduce or prevent reading a charge value including leakage charge introduced to the electrical charge storage element, and thus adversely affecting an image result.

Abstract: An image sensor having a shield including, for example, a metal, is above an electrical charge storage element in a pixel region to block light incident toward the electrical charge storage element, thereby making it possible to reduce or prevent reading a charge value including leakage charge introduced to the electrical charge storage element, and thus adversely affecting an image result.

Abstract: Provided is a cooling device capable of controlling the temperature of an upper portion of a reactor, or more particularly, a gas supply device, for example, a shower head. The cooling device includes a separator configured to uniformly and efficiently cool the gas supply device.

Abstract: Provided is a substrate-processing device capable of preventing a top lid from sagging downward by the own weight of the substrate-processing device and/or a vacuum suction force generated by a vacuum pump and/or thermal shock at high temperature process, in a chamber including a plurality of reactors. Also, provided is a rotating shaft for transferring a substrate between the plurality of reactors.

Abstract: A first friction coefficient that is modeled as affecting a rotational velocity of a voice coil motor is modified. A second friction coefficient that is modeled as affecting a rotational acceleration of the voice coil motor is also modified. The first and second friction coefficients change in response to a change in ambient temperature. A control effort used to control the voice coil motor is changed based on the modified first and second friction coefficients.

Abstract: Apparatus and method for moving a control object, such as but not limited to a data read/write transducer adjacent a rotatable magnetic recording medium in a data storage system. In accordance with some embodiments, a compensation value is calculated for a baseline friction model which predicts friction in a positioning system. A modified friction model is generated based on the compensation value and the baseline friction model. A control object of the positioning system is moved from an initial position to a final position responsive to a trajectory profile calculated using the modified friction model.

Abstract: A pixel array and an image sensor including the pixel array having improved sensitivity and can drive pixels with high resolution, according to embodiments. In embodiments, a pixel array may include a plurality of pixels having a pixel area and a logic area. The pixel array may include at least one of: (1) A photoelectric conversion unit in the pixel area of each of the pixels. (2) A pixel-area transistor disposed at a side of the photoelectric conversion unit in the pixel area. (3) A metal-0 layer on the pixel-area transistor. (4) A metal-1 layer on and/or over the metal-0 layer. (5) A light reception unit on and/or over the metal-1 layer, with the metal-1 layer being the top metal layer in the pixel area.

Abstract: In certain embodiments, a method includes sensing a mode of a motor-base assembly's response to vibration. Based on the sensed response, the method includes adjusting a head-suspension assembly to compensate for off-track motion caused by the vibration. In certain embodiments, an apparatus includes a sensor positioned on a basedeck such that the sensor senses a mode of the motor-base assembly's response to linear vibration.

Abstract: Disclosed is an image sensor including a photodiode region on a first conductive type semiconductor substrate; a first floating diffusion region having a second conductive type, separate from the photodiode region; a second floating diffusion region having the second conductive type, separate from the first floating diffusion region; a first gate on the semiconductor substrate between the photodiode region and the first floating diffusion region; and a second gate on the semiconductor substrate between the first floating diffusion region and the second floating diffusion region, wherein the semiconductor substrate and the first floating diffusion region forms a junction area that is larger than that of the semiconductor substrate and the second floating diffusion region.

Abstract: A method for manufacturing a CMOS image sensor includes: preparing a semiconductor substrate incorporating therein a p-type epitaxial layer by epitaxially growing up an upper portion of the semiconductor substrate; forming a pixel array in one predetermined location of the semiconductor substrate, the pixel array having a plurality of transistors and a photodiode therein, wherein each transistor employs a gate insulator with a thickness ranging from 40 ? to 90 ?; and forming a logic circuit in the other predetermined location of the semiconductor substrate, the logic circuit having at least one transistor, wherein the transistor employs a gate insulator with a thickness ranging from 5 ? to 40 ?.

Abstract: In certain embodiments, a method includes sensing a mode of a motor-base assembly's response to vibration. Based on the sensed response, the method includes adjusting a head-suspension assembly to compensate for off-track motion caused by the vibration. In certain embodiments, an apparatus includes a sensor positioned on a basedeck such that the sensor senses a mode of the motor-base assembly's response to linear vibration.

Abstract: A pixel array and an image sensor including the pixel array having improved sensitivity and can drive pixels with high resolution, according to embodiments. In embodiments, a pixel array may include a plurality of pixels having a pixel area and a logic area. The pixel array may include at least one of: (1) A photoelectric conversion unit in the pixel area of each of the pixels. (2) A pixel-area transistor disposed at a side of the photoelectric conversion unit in the pixel area. (3) A metal-0 layer on the pixel-area transistor. (4) A metal-1 layer on and/or over the metal-0 layer. (5) A light reception unit on and/or over the metal-1 layer, with the metal-1 layer being the top metal layer in the pixel area.

Abstract: A method for manufacturing a CMOS image sensor includes: preparing a semiconductor substrate incorporating therein a p-type epitaxial layer by epitaxially growing up an upper portion of the semiconductor substrate; forming a pixel array in one predetermined location of the semiconductor substrate, the pixel array having a plurality of transistors and a photodiode therein, wherein each transistor employs a gate insulator with a thickness ranging from 40 ? to 90 ?; and forming a logic circuit in the other predetermined location of the semiconductor substrate, the logic circuit having at least one transistor, wherein the transistor employs a gate insulator with a thickness ranging from 5 ? to 40 ?.

Abstract: A backside illuminated image sensor includes a photodiode, formed below the top surface of a semiconductor substrate, for receiving light illuminated from the backside of the semiconductor substrate to generate photoelectric charges, a reflecting gate, formed on the photodiode over the front upper surface of the semiconductor substrate, for reflecting light illuminated from the backside of the substrate and receiving a bias to control a depletion region of the photodiode, and a transfer gate for transferring photoelectric charges from the photodiode to a sensing node of a pixel.

Abstract: A method for manufacturing a CMOS image sensor includes: preparing a semiconductor substrate incorporating therein a p-type epitaxial layer by epitaxially growing up an upper portion of the semiconductor substrate; forming a pixel array in one predetermined location of the semiconductor substrate, the pixel array having a plurality of transistors and a photodiode therein, wherein each transistor employs a gate insulator with a thickness ranging from 40 ? to 90 ?; and forming a logic circuit in the other predetermined location of the semiconductor substrate, the logic circuit having at least one transistor, wherein the transistor employs a gate insulator with a thickness ranging from 5 ? to 40 ?.

Abstract: A circuit includes a proximity detection component that applies wavelet analysis to a sensed signal from a sensor and responsively provides an output indicative of whether proximity exists between the sensor and an object that causes the sensor to produce the sensed signal.

Abstract: A backside illuminated image sensor includes a photodiode, formed below the top surface of a semiconductor substrate, for receiving light illuminated from the backside of the semiconductor substrate to generate photoelectric charges, a reflecting gate, formed on the photodiode over the front upper surface of the semiconductor substrate, for reflecting light illuminated from the backside of the substrate and receiving a bias to control a depletion region of the photodiode, and a transfer gate for transferring photoelectric charges from the photodiode to a sensing node of a pixel.