Abstract: Embodiments of the disclosure provide a method to form an air gap structure. An opening is formed in a first dielectric layer between adjacent conductors. A first dielectric layer is formed over the opening to fill a first portion of the opening. A remainder of the opening is free of the first dielectric layer. A second dielectric layer is formed on a top surface of the first dielectric layer, with a remainder of the opening unfilled. The second dielectric layer is devoid of wiring. The remainder of the opening below the second dielectric layer defines an air gap structure. A wiring layer is formed above the air gap structure.

Abstract: Embodiments of the disclosure provide a method to form an air gap structure. An opening is formed in a first dielectric layer between adjacent conductors. A first dielectric layer is formed over the opening to fill a first portion of the opening. A remainder of the opening is free of the first dielectric layer. A second dielectric layer is formed on a top surface of the first dielectric layer, with a remainder of the opening unfilled. The second dielectric layer is devoid of wiring. The remainder of the opening below the second dielectric layer defines an air gap structure. A wiring layer is formed above the air gap structure.

Abstract: A structure includes an air gap structure including: an opening in a first dielectric layer between adjacent conductors, and a non-conformal dielectric layer over the opening. In some cases, the non-conformal dielectric layer narrows an end portion of the opening of the air gap but may not seal the opening. In other cases, the non-conformal layer may seal the end portion of the opening and include a seam therein. The air gap structure may also include a conformal dielectric layer on the non-conformal dielectric layer. The conformal layer either seals the end portion of the opening or, if present, seals the seam. The structure may also include a wiring layer over the air gap structure.

Abstract: A structure includes an air gap structure including: an opening in a first dielectric layer between adjacent conductors, and a non-conformal dielectric layer over the opening. In some cases, the non-conformal dielectric layer narrows an end portion of the opening of the air gap but may not seal the opening. In other cases, the non-conformal layer may seal the end portion of the opening and include a seam therein. The air gap structure may also include a conformal dielectric layer on the non-conformal dielectric layer. The conformal layer either seals the end portion of the opening or, if present, seals the seam. The structure may also include a wiring layer over the air gap structure.

Abstract: The present invention relates to plasma cleaning methods for removing surface deposits from a surface, such as the interior of a depositions chamber that is used in fabricating electronic devices. The present invention also provides gas mixtures and activated gas mixtures which provide superior performance in removing deposits from a surface. The methods involve activating a gas mixture comprising a carbon or sulfur source, NF3, and optionally, an oxygen source to form an activated gas, and contacting the activated gas mixture with surface deposits to remove the surface deposits wherein the activated gas mixture acts to passivate the interior surfaces of the apparatus to reduce the rate of surface recombination of gas phase species.

Abstract: A method of forming patterns in a semiconductor device comprises: forming a conductive film on a substrate; forming an anti-reflective layer on the conductive film; cleaning oxide residues on the anti-reflective layer using a first cleaning solution; cleaning the oxide residues on the anti-reflective layer using a second cleaning solution; forming a photoresist pattern on the anti-reflective layer; and patterning the conductive film using the photoresist pattern.

Abstract: A method of forming patterns in a semiconductor device comprises: forming a conductive film on a substrate; forming an anti-reflective layer on the conductive film; cleaning oxide residues on the anti-reflective layer using a first cleaning solution; cleaning the oxide residues on the anti-reflective layer using a second cleaning solution; forming a photoresist pattern on the anti-reflective layer; and patterning the conductive film using the photoresist pattern.