Abstract: A method of generating a photo mask layout includes providing a first photo mask layout including main patterns and sub-resolution assist features (SRAF) patterns, defining a plurality of mesh cells by dividing the first photo mask layout into regions, generating a rule based table including correction information for correcting defects in the SRAF patterns for at least one of the plurality of mesh cells, and correcting the SRAF patterns by applying values of the correction information to the SRAF patterns corresponding to each mesh cell.

Abstract: A method of fabricating an attenuated phase-shift photomask includes forming a phase-shift material layer on a photomask substrate, forming a light opaque layer on the phase-shift material layer, forming a first resist pattern on the light opaque layer to selectively expose a pattern region, etching the light opaque layer using the first resist pattern as an etch mask, such that a first light opaque pattern layer is formed to selectively expose the phase-shift material layer, removing the first resist pattern, forming a second resist pattern on the light opaque layer, such that a cell pattern block in the pattern region is selectively exposed, and etching the exposed phase-shift material layer using the first light opaque pattern layer as an etch mask to form a phase-shift material pattern layer selectively exposing a top surface of the photomask substrate.

Abstract: A method of generating a photo mask layout includes providing a first photo mask layout including main patterns and sub-resolution assist features (SRAF) patterns, defining a plurality of mesh cells by dividing the first photo mask layout into regions, generating a rule based table including correction information for correcting defects in the SRAF patterns for at least one of the plurality of mesh cells, and correcting the SRAF patterns by applying values of the correction information to the SRAF patterns corresponding to each mesh cell.