Abstract: An anode active material for a secondary battery according to an embodiment includes a plurality of a silicon-based active material particle being doped with a metal element and including pores. An average of porosity values measured for each of 10 different silicon-based active material particles among the plurality of the silicon-based active material particle is in a range from 0.2% to 9.0%.

Abstract: A binder solution for an all-solid-state battery, an electrode slurry for an all-solid-state battery including the same and a method of manufacturing an all-solid-state battery using the same, and more particularly to a binder solution for an all-solid-state battery, in which a polymer binder configured such that a non-polar functional group is bonded to the end of a polar functional group is used, whereby the polar functional group is provided by a deprotection mechanism of the polymer binder through a thermal treatment, thus increasing adhesion between electrode materials to thereby improve battery capacity and enabling a wet process to thereby reduce manufacturing costs, an electrode slurry for an all-solid-state battery including the same and a method of manufacturing an all-solid-state battery using the same.

Abstract: Provided is a method for electrowinning neodymium compound. The method includes providing a fluoride-based electrolyte through an opening defined in an electrolytic bath including a cathode and an anode. The method includes providing granules, each including a neodymium compound and having at least one cavity defined therein, through the opening defined in the electrolytic bath. The method includes dissolving at least a portion of the granule in a molten salt of the fluoride-based electrolyte. The method also includes reducing neodymium at the cathode. The cavity is defined inside or on the surface of the granule, and the apparent density of the granules is lower than the density of the molten salt. The method proposed has an improved process compared to those of the related art.

Abstract: A coil component is provided. The coil component includes a body having fifth and sixth surfaces opposing each other, first and second surfaces respectively connecting the fifth and sixth surfaces of the body and opposing each other, and third and fourth surfaces respectively connecting the first and second surfaces of the body and opposing each other in one direction, a recess disposed in an edge between one of the first and second surfaces of the body and the sixth surface of the body, a coil portion disposed inside the body and exposed through the recess, and an external electrode including a connection portion disposed in the recess and connected to the coil portion, and a pad portion disposed on one surface of the body. A length of the pad portion in the one direction is greater than a length of the connection portion in the one direction.

Abstract: The present invention relates generally to a phase change memory device and, more particularly, to a phase change memory cell array suitable for the implementation of a high-density memory device. The phase change memory cell array includes a first access transistor pair and a second access transistor pair formed on a semiconductor substrate to be adjacent to each other while each of the first and second access transistor pairs having a common drain, phase change resistance elements formed on source regions of the access transistors, respectively, and a semiconductor region formed on the same plane as the common drains to electrically connect the common drains of the first and second transistor pairs. The phase change memory cell array and the memory device of the present invention are suitable for the implementation of a high-density semiconductor device, and capable of improving the reliability of a contact forming process by securing a sufficient space for the contact forming process.