Abstract: In one embodiment, an integrated circuit includes a substrate, a buffer layer, a source region, a drain region, a channel region, and a gate structure. The substrate includes silicon. The buffer layer is above the substrate and includes a semiconductor material having defects near an interface with the substrate. The buffer layer also includes ions implanted among the defects. The source region and drain region are above the buffer layer, and the channel region is above the buffer layer and between the source and drain regions. The gate structure above the channel region.

Abstract: An integrated circuit (IC) structure, an IC device, an IC device assembly, and a method of forming the same. The IC structure includes a transistor device comprising: a channel structure including a semiconductor material; a gate stack including a metal, the gate stack on the channel structure; a source structure in a first trench at a first side of the gate stack; a drain structure in a second trench at a second side of the gate stack; individual ones of the source structure and the drain structure including a source or drain (source/drain) liner comprising a doped epitaxial layer conformal with a surface of a corresponding one of the first trench and the second trench; a fill structure filling a portion of a corresponding one the first trench and the second trench, the fill structure adjacent to and compositionally different from the source/drain liner; and metal contact structures coupled to respective ones of the source structure and the drain structure.