Abstract: Disclosed are a plasmid comprising dxCas9 and a CRP derivative for controlling the expression of a target gene, a recombinant strain transformed with the plasmid, a preparation method therefor, a target gene control system, and a method for controlling the expression of a target gene, wherein the plasmid, recombinant strain, and expression control system according to the present invention can improve the production of high-value-added substances by construction of a system for simultaneously and multiply controlling the expression of target genes.

Abstract: A semiconductor device includes an active pattern having a lower pattern, and a plurality of sheet patterns spaced apart from the lower pattern in a first direction; first and second structures disposed on the lower pattern, wherein the first and second structures are arranged and spaced apart from each other in a second direction; a source/drain recess defined between first and second gate structures; and a source/drain pattern filling the source/drain recess, wherein the source/drain pattern includes a stacking fault spaced apart from the lower pattern.

Abstract: A smart card with improved power stability is provided.

Abstract: Signal power management circuits and smart cards including the same are provided. For example, a signal power management circuit comprises a rectifier that is configured to rectify a received radio frequency signal and output a first rectified voltage, a first regulator that is configured to maintain the first rectified voltage at a predetermined first voltage level, and a second regulator that is configured to receive an output of the first regulator and maintain a second rectified voltage different from the first rectified voltage at a predetermined second voltage level. A signal detector of the signal power management circuit is configured to receive the first rectified voltage and the second rectified voltage and detect a signal component of the received radio frequency signal on the basis of a difference between the first voltage level of the first rectified voltage and the second voltage level of the second rectified voltage.

Abstract: Signal power management circuits and smart cards including the same are provided. For example, a signal power management circuit comprises a rectifier that is configured to rectify a received radio frequency signal and output a first rectified voltage, a first regulator that is configured to maintain the first rectified voltage at a predetermined first voltage level, and a second regulator that is configured to receive an output of the first regulator and maintain a second rectified voltage different from the first rectified voltage at a predetermined second voltage level. A signal detector of the signal power management circuit is configured to receive the first rectified voltage and the second rectified voltage and detect a signal component of the received radio frequency signal on the basis of a difference between the first voltage level of the first rectified voltage and the second voltage level of the second rectified voltage.

Abstract: A smart card with improved power stability is provided.

Abstract: A dummy gate electrode layer and a dummy gate mask layer may be formed on a substrate. The dummy gate mask layer may be patterned to form a dummy gate mask so that a portion of the dummy gate electrode layer is exposed. Ions may be implanted into the exposed portion of the dummy gate electrode layer and a portion of the dummy gate electrode layer adjacent thereto by an angled ion implantation to form a growth blocking layer in the dummy gate electrode layer. The dummy gate electrode layer may be etched using the dummy gate mask as an etching mask to form a dummy gate electrode. A spacer may be formed on side surfaces of a dummy gate structure including the dummy gate electrode and the dummy gate mask. An SEG process may be performed to form an epitaxial layer.

Abstract: A method of manufacturing an integrated circuit device and an integrated circuit device prepared according to the method, the method including forming a silicon oxycarbonitride (SiOCN) material layer on an active region of a substrate, the forming the SiOCN material layer including using a precursor that has a bond between a silicon (Si) atom and a carbon (C) atom; etching a portion of the active region to form a recess in the active region; baking a surface of the recess at about 700° C. to about 800° C. under a hydrogen (H2) atmosphere, and exposing the SiOCN material layer to the atmosphere of the baking while performing the baking; and growing a semiconductor layer from the surface of the recess baked under the hydrogen atmosphere.

Abstract: A dummy gate electrode layer and a dummy gate mask layer may be formed on a substrate. The dummy gate mask layer may be patterned to form a dummy gate mask so that a portion of the dummy gate electrode layer is exposed. Ions may be implanted into the exposed portion of the dummy gate electrode layer and a portion of the dummy gate electrode layer adjacent thereto by an angled ion implantation to form a growth blocking layer in the dummy gate electrode layer. The dummy gate electrode layer may be etched using the dummy gate mask as an etching mask to form a dummy gate electrode. A spacer may be formed on side surfaces of a dummy gate structure including the dummy gate electrode and the dummy gate mask. An SEG process may be performed to form an epitaxial layer.

Abstract: A method of manufacturing an integrated circuit device and an integrated circuit device prepared according to the method, the method including forming a silicon oxycarbonitride (SiOCN) material layer on an active region of a substrate, the forming the SiOCN material layer including using a precursor that has a bond between a silicon (Si) atom and a carbon (C) atom; etching a portion of the active region to form a recess in the active region; baking a surface of the recess at about 700° C. to about 800° C. under a hydrogen (H2) atmosphere, and exposing the SiOCN material layer to the atmosphere of the baking while performing the baking; and growing a semiconductor layer from the surface of the recess baked under the hydrogen atmosphere.

Abstract: A dummy gate electrode layer and a dummy gate mask layer may be formed on a substrate. The dummy gate mask layer may be patterned to form a dummy gate mask so that a portion of the dummy gate electrode layer is exposed. Ions may be implanted into the exposed portion of the dummy gate electrode layer and a portion of the dummy gate electrode layer adjacent thereto by an angled ion implantation to form a growth blocking layer in the dummy gate electrode layer. The dummy gate electrode layer may be etched using the dummy gate mask as an etching mask to form a dummy gate electrode. A spacer may be formed on side surfaces of a dummy gate structure including the dummy gate electrode and the dummy gate mask. An SEG process may be performed to form an epitaxial layer.

Abstract: A pixel array may include an array of microlenses, an array of photodetectors, and an array of color filters. The array of microlenses concentrate incoming light through respective filters in the array of color filters to respective photodetectors in the array of photodetectors. An anti-reflective layer is included between the photodetectors and color filters. The anti-reflective layer includes a first layer having a first index of refraction, a second layer closer to the color filter than the first layer having a second, higher, index of refraction, and a lattice adjusting layer between the first and second layers. The second layer includes a rutile phase TiO2 layer and the lattice adjusting layer includes a crystalline material having a lattice constant similar to that of the rutile phase TiO2 layer.

Abstract: A dummy gate electrode layer and a dummy gate mask layer may be formed on a substrate. The dummy gate mask layer may be patterned to form a dummy gate mask so that a portion of the dummy gate electrode layer is exposed. Ions may be implanted into the exposed portion of the dummy gate electrode layer and a portion of the dummy gate electrode layer adjacent thereto by an angled ion implantation to form a growth blocking layer in the dummy gate electrode layer. The dummy gate electrode layer may be etched using the dummy gate mask as an etching mask to form a dummy gate electrode. A spacer may be formed on side surfaces of a dummy gate structure including the dummy gate electrode and the dummy gate mask. An SEG process may be performed to form an epitaxial layer.