Patents by Inventor Ju-Ru HSIEH
Ju-Ru HSIEH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11721694Abstract: A semiconductor device including fin field-effect transistors, includes a first gate structure extending in a first direction, a second gate structure extending the first direction and aligned with the first gate structure in the first direction, a third gate structure extending in the first direction and arranged in parallel with the first gate structure in a second direction crossing the first direction, a fourth gate structure extending the first direction, aligned with the third gate structure and arranged in parallel with the second gate structure, an interlayer dielectric layer disposed between the first to fourth gate electrodes, and a separation wall made of different material than the interlayer dielectric layer and disposed between the first and third gate structures and the second and fourth gate structures.Type: GrantFiled: February 27, 2020Date of Patent: August 8, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Yi-Chen Ho, Hung Chih Hu, Hung Cheng Yu, Ju Ru Hsieh
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Publication number: 20220359411Abstract: The present disclosure provides a structure and a method to reduce electro-migration. An interconnect structure according to the present disclosure includes a conductive feature embedded in a dielectric layer, a capping barrier layer disposed over the conductive feature and the dielectric layer, and an adhesion layer sandwiched between the capping barrier layer and the dielectric layer. The adhesion layer includes a degree of crystallinity between about 40% and about 70%.Type: ApplicationFiled: July 20, 2022Publication date: November 10, 2022Inventors: Yi-Chen HO, Chien Lin, Cheng-Yeh Yu, Hsin-Hsing Chen, Ju Ru Hsieh
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Publication number: 20220336450Abstract: A semiconductor device including fin field-effect transistors, includes a first gate structure extending in a first direction, a second gate structure extending the first direction and aligned with the first gate structure in the first direction, a third gate structure extending in the first direction and arranged in parallel with the first gate structure in a second direction crossing the first direction, a fourth gate structure extending the first direction, aligned with the third gate structure and arranged in parallel with the second gate structure, an interlayer dielectric layer disposed between the first to fourth gate electrodes, and a separation wall made of different material than the interlayer dielectric layer and disposed between the first and third gate structures and the second and fourth gate structures.Type: ApplicationFiled: June 30, 2022Publication date: October 20, 2022Inventors: Yi-Chen HO, Hung Chih HU, Hung Cheng YU, Ju Ru HSIEH
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Patent number: 11450609Abstract: The present disclosure provides a structure and a method to reduce electro-migration. An interconnect structure according to the present disclosure includes a conductive feature embedded in a dielectric layer, a capping barrier layer disposed over the conductive feature and the dielectric layer, and an adhesion layer sandwiched between the capping barrier layer and the dielectric layer. The adhesion layer includes a degree of crystallinity between about 40% and about 70%.Type: GrantFiled: September 10, 2020Date of Patent: September 20, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Yi-Chen Ho, Chien Lin, Cheng-Yeh Yu, Hsin-Hsing Chen, Ju Ru Hsieh
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Publication number: 20220246609Abstract: An integrated circuit die includes a FinFET transistor. The FinFET transistor includes an anti-punch through region below a channel region. Undesirable dopants are removed from the anti-punch through region during formation of the source and drain regions. When source and drain recesses are formed, a layer of dielectric material is deposited in the recesses. An annealing process is then performed. Undesirable dopants diffuse from the anti-punch through region into the layer of dielectric material during the annealing process. The layer of dielectric material is then removed. The source and drain regions are then formed by depositing semiconductor material in the recesses.Type: ApplicationFiled: April 22, 2022Publication date: August 4, 2022Inventors: Yi-Chen HO, Chien LIN, Tzu-Wei LIN, Ju Ru HSIEH, Ching-Lun LAI, Ming-Kai LO
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Patent number: 11315921Abstract: An integrated circuit die includes a FinFET transistor. The FinFET transistor includes an anti-punch through region below a channel region. Undesirable dopants are removed from the anti-punch through region during formation of the source and drain regions. When source and drain recesses are formed, a layer of dielectric material is deposited in the recesses. An annealing process is then performed. Undesirable dopants diffuse from the anti-punch through region into the layer of dielectric material during the annealing process. The layer of dielectric material is then removed. The source and drain regions are then formed by depositing semiconductor material in the recesses.Type: GrantFiled: December 19, 2019Date of Patent: April 26, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Yi-Chen Ho, Chien Lin, Tzu-Wei Lin, Ju Ru Hsieh, Ching-Lun Lai, Ming-Kai Lo
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Publication number: 20210375776Abstract: The present disclosure provides a structure and a method to reduce electro-migration. An interconnect structure according to the present disclosure includes a conductive feature embedded in a dielectric layer, a capping barrier layer disposed over the conductive feature and the dielectric layer, and an adhesion layer sandwiched between the capping barrier layer and the dielectric layer. The adhesion layer includes a degree of crystallinity between about 40% and about 70%.Type: ApplicationFiled: September 10, 2020Publication date: December 2, 2021Inventors: Yi-Chen Ho, Chien Lin, Cheng-Yeh Yu, Hsin-Hsing Chen, Ju Ru Hsieh
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Publication number: 20210272951Abstract: A semiconductor device including fin field-effect transistors, includes a first gate structure extending in a first direction, a second gate structure extending the first direction and aligned with the first gate structure in the first direction, a third gate structure extending in the first direction and arranged in parallel with the first gate structure in a second direction crossing the first direction, a fourth gate structure extending the first direction, aligned with the third gate structure and arranged in parallel with the second gate structure, an interlayer dielectric layer disposed between the first to fourth gate electrodes, and a separation wall made of different material than the interlayer dielectric layer and disposed between the first and third gate structures and the second and fourth gate structures.Type: ApplicationFiled: February 27, 2020Publication date: September 2, 2021Inventors: Yi-Chen HO, Hung Chih HU, Hung Cheng YU, Ju Ru HSIEH
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Publication number: 20210193653Abstract: An integrated circuit die includes a FinFET transistor. The FinFET transistor includes an anti-punch through region below a channel region. Undesirable dopants are removed from the anti-punch through region during formation of the source and drain regions. When source and drain recesses are formed, a layer of dielectric material is deposited in the recesses. An annealing process is then performed. Undesirable dopants diffuse from the anti-punch through region into the layer of dielectric material during the annealing process. The layer of dielectric material is then removed. The source and drain regions are then formed by depositing semiconductor material in the recesses.Type: ApplicationFiled: December 19, 2019Publication date: June 24, 2021Inventors: Yi-Chen HO, Chien LIN, Tzu-Wei LIN, Ju Ru HSIEH, Ching-Lun LAI, Ming-Kai LO
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Patent number: 10522369Abstract: A method of cleaning a wafer in semiconductor fabrication is provided. The method includes cleaning a wafer using a wafer scrubber. The method further includes moving the wafer scrubber into an agitated cleaning fluid. The method also includes creating a contact between the wafer scrubber and a cleaning stage in the agitated cleaning fluid. In addition, the method includes cleaning the wafer or a second wafer by the wafer scrubber after the wafer scrubber is cleaned by the agitated cleaning fluid.Type: GrantFiled: February 26, 2015Date of Patent: December 31, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chien-Chun Hu, Chen-Liang Chang, Ju-Ru Hsieh, Po-Chia Chen, Shun-Yu Chuang, Wei-Tuzo Lin
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Patent number: 10475643Abstract: A method for manufacturing a semiconductor device includes introducing a gas into a chamber from a showerhead. The chamber has a sidewall surrounding a pedestal. The temperature of the showerhead is increased. The showerhead is thermally connected to the sidewall of the chamber, and a temperature of the sidewall of the chamber is increased by increasing the temperature of the showerhead.Type: GrantFiled: January 22, 2018Date of Patent: November 12, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Ren-Hua Guo, Ju-Ru Hsieh, Jen-Hao Yang
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Publication number: 20180144932Abstract: A method for manufacturing a semiconductor device includes introducing a gas into a chamber from a showerhead. The chamber has a sidewall surrounding a pedestal. The temperature of the showerhead is increased. The showerhead is thermally connected to the sidewall of the chamber, and a temperature of the sidewall of the chamber is increased by increasing the temperature of the showerhead.Type: ApplicationFiled: January 22, 2018Publication date: May 24, 2018Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Ren-Hua GUO, Ju-Ru HSIEH, Jen-Hao YANG
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Chemical vapor deposition apparatus and method for manufacturing semiconductor device using the same
Patent number: 9899210Abstract: A method for manufacturing a semiconductor device includes forming a transistor on a substrate. Precursor gases are provided from a showerhead of a chemical vapor deposition (CVD) apparatus to form a contact etch stop layer (CESL) to cover the transistor and the substrate. A temperature of the showerhead is controlled in a range of about 70° C. to about 100° C. to control a temperature of the precursor gases.Type: GrantFiled: October 20, 2015Date of Patent: February 20, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Ren-Hua Guo, Ju-Ru Hsieh, Jen-Hao Yang -
CHEMICAL VAPOR DEPOSITION APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
Publication number: 20170110318Abstract: A method for manufacturing a semiconductor device includes forming a transistor on a substrate. Precursor gases are provided from a showerhead of a chemical vapor deposition (CVD) apparatus to form a contact etch stop layer (CESL) to cover the transistor and the substrate. A temperature of the showerhead is controlled in a range of about 70° C. to about 100° C. to control a temperature of the precursor gases.Type: ApplicationFiled: October 20, 2015Publication date: April 20, 2017Inventors: Ren-Hua GUO, Ju-Ru HSIEH, Jen-Hao YANG -
Publication number: 20160254170Abstract: A method of cleaning a wafer in semiconductor fabrication is provided. The method includes cleaning a wafer using a wafer scrubber. The method further includes moving the wafer scrubber into an agitated cleaning fluid. The method also includes creating a contact between the wafer scrubber and a cleaning stage in the agitated cleaning fluid. In addition, the method includes cleaning the wafer or a second wafer by the wafer scrubber after the wafer scrubber is cleaned by the agitated cleaning fluid.Type: ApplicationFiled: February 26, 2015Publication date: September 1, 2016Inventors: Chien-Chun HU, Chen-Liang CHANG, Ju-Ru HSIEH, Po-Chia CHEN, Shun-Yu CHUANG, Wei-Tuzo LIN