Abstract: A non-volatile memory device includes a feedback circuit and a precharge switching transistor. The feedback circuit generates a feedback signal based on a voltage level of a bitline during a precharge operation. The precharge switching transistor, in response to the feedback signal, controls a precharge current for precharging the bitline. The speed of the precharge operation may be increased and/or mismatch of the bias signals in precharging a plurality of bitlines may be reduced.

Abstract: A non-volatile memory device performs a read operation for compensating for coupling due to an adjacent memory cell. With the read operation of the non-volatile memory device, the coupling effect included in a read result of the selected memory cell is compensated on the basis of a program state of an adjacent memory cell adjacent to the selected memory cell. Toward this end, a read operation for the adjacent memory cell is selectively performed before the selected memory cell is read. Upon sensing of data from the selected memory cell, one or more read operations for the selected memory cell are performed according to the program state of the adjacent memory cell with a read voltage being changed in level depending on the program state of the adjacent memory cell.

Abstract: To check insulation of a pouch electric cell, probes are contacted to an electrode of a pouch electric cell and an aluminum layer of a pouch of the pouch electric cell, respectively, and then an electric characteristic value between the probes is measured. The probe contacted with the aluminum layer has a contact portion made of conductive elastic material. Also, insulation of the pouch electric cell is determined by comparing the measured electric characteristic value with a reference value. Thus, physical characteristics of an outer periphery of a flexible pouch may be sufficiently exhibited in measuring or checking insulation of a pouch electric cell such as insulation resistance, thereby improving reliability of electric contact and minimizing physical damage or deformation of the pouch electric cell.

Abstract: A nonvolatile memory system is operated by performing a program loop on each of a plurality of memory cells, each program loop comprising at least one program-verify operation and selectively pre-charging bit lines associated with each of the plurality of memory cells during the at least one program-verify operation.

Abstract: A flash memory device controls a common source line voltage and performs a program verify method. A plurality of memory cells is connected between a bit line and the common source line. A data input/output circuit is connected to the bit line and is configured to store data to be programmed in a selected memory cell of the plurality of memory cells. The data input/output circuit maintains data to be programmed within the data input/output circuit during a program verify operation, and decreases noise in the common source line by selectively precharging the bit line based on the data to be programmed.

Abstract: A contact pad configured to sense the voltage of a cell module assembly including at least one battery cell, is electrically connected to a voltage sensing module for measuring the voltage of the battery cell in the cell module assembly and electrically contacted with an electrode of the battery cell, and is made of a conductive organic elastomer, thereby improving reliability of electrical contact with each battery cell, and effectively preventing malfunction of the cell module assembly caused by impurities, external physical shocks and so on.

Abstract: An apparatus for checking insulation of a cell module assembly composed of a plurality of pouch cells includes a first probing unit electrically contacted to an electrode of the cell module assembly; a second probing unit electrically contacted to aluminum films of selected ones of the pouch cells in the cell module assembly; and a measuring unit for measuring an insulation resistance between the first probing unit and the second probing unit. This apparatus may measure insulation resistances of a plurality of pouch cells of the cell module assembly at once, thereby ensuring faster insulation checking.

Abstract: A non-volatile memory device includes a feedback circuit and a precharge switching transistor. The feedback circuit generates a feedback signal based on a voltage level of a bitline during a precharge operation. The precharge switching transistor, in response to the feedback signal, controls a precharge current for precharging the bitline. The speed of the precharge operation may be increased and/or mismatch of the bias signals in precharging a plurality of bitlines may be reduced.

Abstract: A nonvolatile memory system is operated by performing a program loop on each of a plurality of memory cells, each program loop comprising at least one program-verify operation and selectively pre-charging bit lines associated with each of the plurality of memory cells during the at least one program-verify operation.

Abstract: A flash memory device controls a common source line voltage and performs a program verify method. A plurality of memory cells is connected between a bit line and the common source line. A data input/output circuit is connected to the bit line and is configured to store data to be programmed in a selected memory cell of the plurality of memory cells. The data input/output circuit maintains data to be programmed within the data input/output circuit during a program verify operation, and decreases noise in the common source line by selectively precharging the bit line based on the data to be programmed.