Abstract: A method for forming a semiconductor structure is provided. The method includes forming a first nanostructure and a second nanostructure over a substrate, forming a first interfacial layer on the first nanostructure and a second interfacial layer on the second nanostructure, forming a first gate dielectric layer on the first interfacial layer and a second gate dielectric layer on the second interfacial layer, forming a patterned mask layer on the second gate dielectric layer while exposing the first gate dielectric layer, and driving nitrogen into the first interfacial layer, thereby forming a nitrogen-doped interfacial layer.

Abstract: A printed circuit board includes a substrate and a circuit layer located on top of the substrate. The circuit layer further includes a plurality of lattice holes.