Abstract: In one aspect, antibodies that specifically bind to a human triggering receptor expressed on myeloid cells 2 (TREM2) protein are provided. In some embodiments, the antibody decreases levels of soluble TREM2 (sTREM2). In some embodiments, the antibody enhances TREM2 activity.

Abstract: The disclosure is directed to compounds of Formula (I) and pharmaceutically acceptable salts and solvates thereof. The disclosure is also directed to pharmaceutical compositions containing compounds of Formula (I) and pharmaceutically acceptable salts or solvates thereof, and uses of the pharmaceutical compositions in treating diseases, conditions, and disorders associated with fatty acid amide hydrolase (FAAH) activity.

Abstract: In one aspect, antibodies that specifically bind to a human triggering receptor expressed on myeloid cells 2 (TREM2) protein are provided. In some embodiments, the antibody decreases levels of soluble TREM2 (sTREM2). In some embodiments, the antibody enhances TREM2 activity.

Abstract: In one aspect, antibodies that specifically bind to a human triggering receptor expressed on myeloid cells 2 (TREM2) protein are provided. In some embodiments, the antibody decreases levels of soluble TREM2 (sTREM2). In some embodiments, the antibody enhances TREM2 activity.

Abstract: The present disclosure relates to a catalyst for NOx removal. In some embodiments, the catalyst comprises a support comprising at least one selected from the group consisting of TiO2, Al2O3, SiO2, ZrO2, CeO2, zeolite, TiO2 and WO3, and combinations thereof, and catalytically active components supported on the support. The catalytically active components comprise vanadium, antimony and at least one further component selected from the group consisting of silicon, aluminum and zirconium.

Abstract: In one aspect, antibodies that specifically bind to a human triggering receptor expressed on myeloid cells 2 (TREM2) protein are provided. In some embodiments, the antibody increases levels of soluble TREM2 (sTREM2). In some embodiments, the antibody decreases levels of sTREM2. In some embodiments, the antibody enhances TREM2 activity. In some embodiments, the antibody inhibits TREM2 activity.

Abstract: The present invention relates to a catalyst for NOx removal. More specifically, the present invention relates to a supported catalyst, a monolithic selective catalytic reduction (SCR) catalyst, preparation method therefor, and method for NOx removal.

Abstract: Methods for improving hybrid bond yield for semiconductor wafers forming 3DIC devices includes first and second wafers having dummy and main metal deposited and patterned during BEOL processing. Metal of the dummy metal pattern occupies from about 40% to about 90% of the surface area of any given dummy metal pattern region. High dummy metal surface coverage, in conjunction with utilization of slotted conductive pads, allows for improved planarization of wafer surfaces presented for hybrid bonding. Planarized wafers exhibit minimum topographic differentials corresponding to step height differences of less than about 400 ?. Planarized first and second wafers are aligned and subsequently hybrid bonded with application of heat and pressure; dielectric-to-dielectric, RDL-to-RDL. Lithography controls to realize WEE from about 0.5 mm to about 1.5 mm may be employed to promote topographic uniformity at wafer edges.

Abstract: Methods for improving hybrid bond yield for semiconductor wafers forming 3DIC devices includes first and second wafers having dummy and main metal deposited and patterned during BEOL processing. Metal of the dummy metal pattern occupies from about 40% to about 90% of the surface area of any given dummy metal pattern region. High dummy metal surface coverage, in conjunction with utilization of slotted conductive pads, allows for improved planarization of wafer surfaces presented for hybrid bonding. Planarized wafers exhibit minimum topographic differentials corresponding to step height differences of less than about 400 ?. Planarized first and second wafers are aligned and subsequently hybrid bonded with application of heat and pressure; dielectric-to-dielectric, RDL-to-RDL. Lithography controls to realize WEE from about 0.5 mm to about 1.5 mm may be employed to promote topographic uniformity at wafer edges.

Abstract: An integrated circuit (IC) using a copper-alloy based hybrid bond is provided. The IC comprises a pair of semiconductor structures vertically stacked upon one another. The pair of semiconductor structures comprise corresponding dielectric layers and corresponding metal features arranged in the dielectric layers. The metal features comprise a copper alloy having copper and a secondary metal. The IC further comprises a hybrid bond arranged at an interface between the semiconductor structures. The hybrid bond comprises a first bond bonding the dielectric layers together and a second bond bonding the metal features together. The second bond comprises voids arranged between copper grains of the metal features and filled by the secondary metal. A method for bonding a pair of semiconductor structures together using the copper-alloy based hybrid bond is also provided.

Abstract: Methods for improving hybrid bond yield for semiconductor wafers forming 3DIC devices includes first and second wafers having dummy and main metal deposited and patterned during BEOL processing. Metal of the dummy metal pattern occupies from about 40% to about 90% of the surface area of any given dummy metal pattern region. High dummy metal surface coverage, in conjunction with utilization of slotted conductive pads, allows for improved planarization of wafer surfaces presented for hybrid bonding. Planarized wafers exhibit minimum topographic differentials corresponding to step height differences of less than about 400 ?. Planarized first and second wafers are aligned and subsequently hybrid bonded with application of heat and pressure; dielectric-to-dielectric, RDL-to-RDL. Lithography controls to realize WEE from about 0.5 mm to about 1.5 mm may also be employed to promote topographic uniformity at wafer edges.

Abstract: An integrated circuit (IC) using a copper-alloy based hybrid bond is provided. The IC comprises a pair of semiconductor structures vertically stacked upon one another. The pair of semiconductor structures comprise corresponding dielectric layers and corresponding metal features arranged in the dielectric layers. The metal features comprise a copper alloy having copper and a secondary metal. The IC further comprises a hybrid bond arranged at an interface between the semiconductor structures. The hybrid bond comprises a first bond bonding the dielectric layers together and a second bond bonding the metal features together. The second bond comprises voids arranged between copper grains of the metal features and filled by the secondary metal. A method for bonding a pair of semiconductor structures together using the copper-alloy based hybrid bond is also provided.

Abstract: A system and method for data model and content migration in content management applications is disclosed that facilitates data migration by utilizing a markup-language format to preserve dependency and enable compatibility among various platforms, applications, devices, etc. The invention generally includes retrieving a plurality of objects, determining a dependency of the plurality of objects, extracting object definitions from the objects, forming a markup-language user document with the extracted object definitions utilizing the determined object dependency, and exporting the markup-language user document.