Abstract: In one example, a semiconductor device can comprise a substrate, a device stack, first and second internal interconnects, and an encapsulant. The substrate can comprise a first and second substrate sides opposite each other, a substrate outer sidewall between the first substrate side and the second substrate side, and a substrate inner sidewall defining a cavity between the first substrate side and the second substrate side. The device stack can be in the cavity and can comprise a first electronic device, and a second electronic device stacked on the first electronic device. The first internal interconnect can be coupled to the substrate and the device stack. The encapsulant can cover the substrate inner sidewall and the device stack and can fill the cavity. Other examples and related methods are disclosed herein.

Abstract: A method of manufacturing a radar transparent cover may include steps of: injection molding a first transparent cover; inserting into a mold the first transparent cover made by the step of injection molding the first transparent cover and then, double injection molding a color resin on a back surface of the first transparent cover; and inserting into a mold the injection molded article made by the step of double injection molding the color resin and then, double injection molding a second transparent cover on a front surface of the first transparent cover.

Abstract: A method of manufacturing a radar transparent cover may include steps of: injection molding a first transparent cover; inserting into a mold the first transparent cover made by the step of injection molding the first transparent cover and then, double injection molding a color resin on a back surface of the first transparent cover; and inserting into a mold the injection molded article made by the step of double injection molding the color resin and then, double injection molding a second transparent cover on a front surface of the first transparent cover.