Patents by Inventor Ju-Wang Hsu
Ju-Wang Hsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11355642Abstract: Methods for manufacturing semiconductor structures are provided. The method includes forming a first masking layer over a substrate and forming a second masking layer over the first masking layer. The method includes forming a photoresist pattern over the second masking layer and patterning the second masking layer through the photoresist pattern. The method further includes diminishing the photoresist pattern and patterning the second masking layer and the first masking layer through the diminished photoresist pattern. The method further includes removing the diminished photoresist pattern and patterning the semiconductor substrate through the second masking layer and the first masking layer to form a fin structure. The method further includes forming a gate structure over the fin structure.Type: GrantFiled: October 18, 2019Date of Patent: June 7, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTDInventors: Ju-Wang Hsu, Chih-Yuan Ting, Tang-Xuan Zhong, Yi-Nien Su, Jang-Shiang Tsai
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Publication number: 20200052122Abstract: Methods for manufacturing semiconductor structures are provided. The method includes forming a first masking layer over a substrate and forming a second masking layer over the first masking layer. The method includes forming a photoresist pattern over the second masking layer and patterning the second masking layer through the photoresist pattern. The method further includes diminishing the photoresist pattern and patterning the second masking layer and the first masking layer through the diminished photoresist pattern. The method further includes removing the diminished photoresist pattern and patterning the semiconductor substrate through the second masking layer and the first masking layer to form a fin structure. The method further includes forming a gate structure over the fin structure.Type: ApplicationFiled: October 18, 2019Publication date: February 13, 2020Inventors: Ju-Wang HSU, Chih-Yuan TING, Tang-Xuan ZHONG, Yi-Nien SU, Jang-Shiang TSAI
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Patent number: 10483397Abstract: A fin field effect transistor and method of forming the same. The fin field effect transistor includes a semiconductor substrate having a fin structure and between two trenches with top portions and bottom portions. The fin field effect transistor further includes shallow trench isolations formed in the bottom portions of the trenches and a gate electrode over the fin structure and the shallow trench isolation, wherein the gate electrode is substantially perpendicular to the fin structure. The fin field effect transistor further includes a gate dielectric layer along sidewalls of the fin structure and source/drain electrode formed in the fin structure.Type: GrantFiled: December 24, 2014Date of Patent: November 19, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTDInventors: Ju-Wang Hsu, Chih-Yuan Ting, Tang-Xuan Zhong, Yi-Nien Su, Jang-Shiang Tsai
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Publication number: 20150137265Abstract: A fin field effect transistor and method of forming the same. The fin field effect transistor includes a semiconductor substrate having a fin structure and between two trenches with top portions and bottom portions. The fin field effect transistor further includes shallow trench isolations formed in the bottom portions of the trenches and a gate electrode over the fin structure and the shallow trench isolation, wherein the gate electrode is substantially perpendicular to the fin structure. The fin field effect transistor further includes a gate dielectric layer along sidewalls of the fin structure and source/drain electrode formed in the fin structure.Type: ApplicationFiled: December 24, 2014Publication date: May 21, 2015Inventors: Ju-Wang HSU, Chih-Yuan TING, Tang-Xuan ZHONG, Yi-Nien SU, Jang-Shiang TSAI
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Patent number: 8927353Abstract: A fin field effect transistor and method of forming the same. The fin field effect transistor includes a semiconductor substrate having a fin structure and between two trenches with top portions and bottom portions. The fin field effect transistor further includes shallow trench isolations formed in the bottom portions of the trenches and a gate electrode over the fin structure and the shallow trench isolation, wherein the gate electrode is substantially perpendicular to the fin structure. The fin field effect transistor further includes a gate dielectric layer along sidewalls of the fin structure and source/drain electrode formed in the fin structure.Type: GrantFiled: May 7, 2007Date of Patent: January 6, 2015Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Ju-Wang Hsu, Chih-Yuan Ting, Tang-Xuan Zhong, Yi-Nien Su, Jang-Shiang Tsai
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Patent number: 8030214Abstract: An embodiment of the disclosure includes a method of forming metal gate structures. A substrate is provided. A first dummy gate electrode and a second dummy gate electrode are formed on the substrate. The first dummy gate electrode comprises first spacers on its sidewalls and the second dummy gate electrode comprises second spacers on its sidewalls. A hardmask layer is formed to covers both the first dummy gate electrode and the second dummy gate electrode. A patterned photoresist layer on the hardmask layer that covers a portion of the hardmask layer over the second dummy gate electrode and that leaves a portion of the hardmask layer over the first dummy gate electrode exposed. The portion of the exposed hardmask layer over the first dummy gate electrode is removed. The first spacers and the first dummy gate electrode is exposed to a first plasma environment comprising O2, HBr, and Cl2.Type: GrantFiled: February 19, 2010Date of Patent: October 4, 2011Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Pochi Wu, Ju-Wang Hsu, Ryan Chia-Jen Chen
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Publication number: 20110207315Abstract: An embodiment of the disclosure includes a method of forming metal gate structures. A substrate is provided. A first dummy gate electrode and a second dummy gate electrode are formed on the substrate. The first dummy gate electrode comprises first spacers on its sidewalls and the second dummy gate electrode comprises second spacers on its sidewalls. A hardmask layer is formed to covers both the first dummy gate electrode and the second dummy gate electrode. A patterned photoresist layer on the hardmask layer that covers a portion of the hardmask layer over the second dummy gate electrode and that leaves a portion of the hardmask layer over the first dummy gate electrode exposed. The portion of the exposed hardmask layer over the first dummy gate electrode is removed. The first spacers and the first dummy gate electrode is exposed to a first plasma environment comprising O2, HBr, and Cl2.Type: ApplicationFiled: February 19, 2010Publication date: August 25, 2011Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Pochi WU, Ju-Wang Hsu, Ryan Chia-Jen Chen
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Patent number: 7875547Abstract: Methods and structures for forming a contact hole structure are disclosed. These methods first form a substantially silicon-free material layer over a substrate. A material layer is formed over the substantially silicon-free material layer. A contact hole is formed within the substantially silicon-free material layer and the material layer without substantially damaging the substrate. In addition, a conductive layer is formed in the contact hole so as to form a contact structure.Type: GrantFiled: January 12, 2005Date of Patent: January 25, 2011Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Ju-Wang Hsu, Jyu-Horng Shieh, Yi-Nien Su, Peng-Fu Hsu, Hun-Jan Tao
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Patent number: 7678655Abstract: A method for forming a field effect transistor device employs a conformal spacer layer formed upon a gate electrode. The gate electrode is employed as a mask for forming a lightly doped extension region within the semiconductor substrate and the gate electrode and conformal spacer layer are employed as a mask for forming a source/drain region within the semiconductor substrate. An anisotropically etched shaped spacer material layer is formed upon the conformal spacer layer and isotropically etched to enhance exposure of the source/drain region prior to forming a silicide layer thereupon.Type: GrantFiled: July 28, 2006Date of Patent: March 16, 2010Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Hung Der Su, Ju-Wang Hsu, Yi-Chun Huang, Shien-Yang Wu, Yung-Shun Chen, Tung-Heng Shie, Yuan-Hung Chiu, Jyh-Huei Chen, Jhon Jhy Liaw
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Publication number: 20080277745Abstract: A fin field effect transistor and method of forming the same. The fin field effect transistor comprises a semiconductor substrate having a fin structure and between two trenches with top portions and bottom portions. The fin field effect transistor further comprises shallow trench isolations formed in the bottom portions of the trenches and a gate electrode over the fin structure and the shallow trench isolation, wherein the gate electrode is substantially perpendicular to the fin structure. The fin field effect transistor further comprises a gate dielectric layer along sidewalls of the fin structure and source/drain electrode formed in the fin structure.Type: ApplicationFiled: May 7, 2007Publication date: November 13, 2008Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Ju-Wang Hsu, Chih-Yuan Ting, Tang-Xuan Zhong, Yi-Nien Su, Jang-Shiang Tsai
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Patent number: 7425740Abstract: A one transistor (1T-RAM) bit cell and method for manufacture are provided. A metal-insulator-metal (MIM) capacitor structure and method of manufacturing it in an integrated process that includes a finFET transistor for the 1T-RAM bit cell is provided. In some embodiments, the finFET transistor and MIM capacitor are formed in a memory region and an asymmetric processing method is disclosed, which allows planar MOSFET transistors to be formed in another region of a single device. In some embodiments, the 1T-RAM cell and additional transistors may be combined to form a macro cell, multiple macro cells may form an integrated circuit. The MIM capacitors may include nanoparticles or nanostructures to increase the effective capacitance. The finFET transistors may be formed over an insulator. The MIM capacitors may be formed in interlevel insulator layers above the substrate. The process provided to manufacture the structure may advantageously use conventional photomasks.Type: GrantFiled: October 7, 2005Date of Patent: September 16, 2008Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Sheng-Da Liu, Hung-Wei Chen, Chang-Yun Chang, Zhong Tang Xuan, Ju-Wang Hsu
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Patent number: 7400401Abstract: A method and system for determining the dielectric constant of a low-k dielectric film on a production substrate include measuring the electronic component of the dielectric constant using an ellipsometer, measuring the ionic component of the dielectric constant using an IR spectrometer, measuring the overall dielectric constant using a microwave spectrometer and deriving the dipolar component of the dielectric constant. The measurements and determination are non-contact and may be carried out on a production device that is further processed following the measurements.Type: GrantFiled: March 31, 2005Date of Patent: July 15, 2008Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Jang-Shiang Tsai, Peng-Fu Hsu, Baw-Ching Perng, Ju-Wang Hsu, Jyu-Horng Shieh, Yi-Nien Su, Hun-Jan Tao
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Publication number: 20080122107Abstract: A method of forming an opening on a low-k dielectric layer using a polysilicon hard mask rather than a metal hard mask as used in prior art. A polysilicon hard mask is formed over a low-k dielectric layer and a photoresist layer is formed over the polysilicon hard mask. The photoresist layer is patterned and the polysilicon hard mask is etched with a gas plasma to create exposed portions of the low-k dielectric layer. The photoresist layer in stripped prior to the etching of the exposed portions of the low-k dielectric layer to avoid damage to the low-k dielectric layer.Type: ApplicationFiled: September 22, 2006Publication date: May 29, 2008Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Jang-Shiang Tsai, Jyu-Horng Shieh, Ju-Wang Hsu, De-Fang Chen, Chia-Hui Lin, Syun-Ming Jang
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Patent number: 7378308Abstract: A semiconductor structure includes a substrate, and a first MOS device on the first region of the substrate wherein the first MOS device includes a first spacer liner. The semiconductor structure further includes a second MOS device on the second region wherein the second MOS device includes a second spacer liner. A first stressed film having a first thickness is formed over the first MOS device and directly on the first spacer liner. A second stressed film having a second thickness is formed over the second MOS device and directly on the second spacer liner. The first and the second stressed films may be formed of a same material.Type: GrantFiled: March 30, 2006Date of Patent: May 27, 2008Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ju-Wang Hsu, Chih-Hsin Ko, Jyu-Horng Shieh, Baw-Ching Perng, Syun-Ming Jang
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Patent number: 7341935Abstract: A semiconductor interconnect structure includes an organic and/or photosensitive etch buffer layer disposed over a contact surface. The structure further provides an interlevel dielectric formed over the etch buffer layer. A method for forming an interconnect structure includes etching to form an opening in the interlevel dielectric, the etching operation being terminated at or above the etch buffer layer. The etch buffer layer is removed to expose the contact surface using a removal process that may include wet etching, ashing or DUV exposure followed by developing or other techniques that do not result in damage to contact surface. The contact surface may be a conductive material such as silicide, salicide or a metal alloy.Type: GrantFiled: June 25, 2004Date of Patent: March 11, 2008Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Ju-Wang Hsu, Jyu-Horng Shieh, Yi-Chun Huang
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Publication number: 20080026518Abstract: A method for forming a field effect transistor device employs a conformal spacer layer formed upon a gate electrode. The gate electrode is employed as a mask for forming a lightly doped extension region within the semiconductor substrate and the gate electrode and conformal spacer layer are employed as a mask for forming a source/drain region within the semiconductor substrate. An anisotropically etched shaped spacer material layer is formed upon the conformal spacer layer and isotropically etched to enhance exposure of the source/drain region prior to forming a silicide layer thereupon.Type: ApplicationFiled: July 28, 2006Publication date: January 31, 2008Inventors: Hung Der Su, Ju-Wang Hsu, Yi-Chun Huang, Shien-Yang Wu, Yung-Shun Chen, Tung-Heng Shie, Yuan-Hung Chiu, Jyh-Huei Chen, Jhon Jhy Liaw
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Patent number: 7316970Abstract: A method for forming a resist protect layer on a semiconductor substrate includes the following steps. An isolation structure is formed on the semiconductor substrate. An original nitride layer having a substantial etch selectivity to the isolation structure is formed over the semiconductor substrate. A photoresist mask is formed for partially covering the original nitride layer. A wet etching is performed to remove the original nitride layer uncovered by the photoresist mask in such a way without causing substantial damage to the isolation structure. As such, the original nitride layer covered by the photoresist mask constitutes the resist protect layer.Type: GrantFiled: July 14, 2004Date of Patent: January 8, 2008Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chien-Hao Chen, Ju-Wang Hsu, Chia-Lin Chen, Tze-Liang Lee, Shih-Chang Chen
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Publication number: 20070235823Abstract: A semiconductor structure includes a substrate, and a first MOS device on the first region of the substrate wherein the first MOS device includes a first spacer liner. The semiconductor structure further includes a second MOS device on the second region wherein the second MOS device includes a second spacer liner. A first stressed film having a first thickness is formed over the first MOS device and directly on the first spacer liner. A second stressed film having a second thickness is formed over the second MOS device and directly on the second spacer liner. The first and the second stressed films may be formed of a same material.Type: ApplicationFiled: March 30, 2006Publication date: October 11, 2007Inventors: Ju-Wang Hsu, Chih-Hsin Ko, Jyu-Horng Shieh, Baw-Ching Perng, Syun-Ming Jang
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Patent number: 7271448Abstract: A multiple gate region FET device for forming up to 6 FET devices and method for forming the same, the device including a multiple fin shaped structure comprising a semiconductor material disposed on a substrate; said multiple fin shaped structure comprising substantially parallel spaced apart sidewall portions, each of said sidewall portions comprising major inner and outer surfaces and an upper surface; wherein, each of said surfaces comprises a surface for forming an overlying field effect transistor (FET).Type: GrantFiled: February 14, 2005Date of Patent: September 18, 2007Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Ju-Wang Hsu, Jyu-Horng Shieh, Hun-Jan Tao, Chang-Yun Chang, Zhong Tang Xuan, Sheng-Da Liu
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Patent number: 7265060Abstract: An improved method of etching very small contact holes through dielectric layers used to separate conducting layers in multilevel integrated circuits formed on semiconductor substrates has been developed. The method uses bi-level ARC coatings in the resist structure and a unique combination of gaseous components in a plasma etching process which is used to dry develop the bi-level resist mask as well as etch through a silicon oxide dielectric layer. The gaseous components comprise a mixture of a fluorine containing gas, such as C4F8, C5F8, C4F6, CHF3 or similar species, an inert gas, such as helium or argon, an optional weak oxidant, such as CO or O2 or similar species, and a nitrogen source, such as N2, N2O, or NH3 or similar species. The patterned masking layer can be used to reliably etch contact holes in silicon oxide layers on semiconductor substrates, where the holes have diameters of about 0.1 micron or less.Type: GrantFiled: July 12, 2004Date of Patent: September 4, 2007Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ming Huan Tsai, Hun Jan Tao, Tsang Jiuh Wu, Ju Wang Hsu