Abstract: A semiconductor memory device is provided that includes a bit line on a substrate, a protruded insulating pattern on the bit line, and in a channel trench, first and second channel patterns that extend along sidewalls of the channel trench, and spaced apart from the first channel pattern in the first direction, a channel interfacial layer that extends along the sidewalls of the channel trench, and is in contact with the first channel pattern and the second channel pattern, a first word line between the first channel pattern and the second channel pattern, a second word line between the first channel pattern and the second channel pattern, and is spaced apart from the first word line in the first direction and a first capacitor and a second capacitor, which are electrically connected to the first channel pattern and the second channel pattern.

Abstract: The present invention relates to a method for preparing an intermediate for synthesis of a xanthine oxidase inhibitor and, more specifically, to a method for preparing compounds of chemical formulas 2 and 4 by using low-priced starting materials and ligands and employing chelating extraction and purification techniques.

Abstract: Provided is a method for producing branched dextrin, the method comprising steps of: adding heat-resistant alpha-amylase to a starch suspension, heating the mixture at 85° C. to 115° C. to perform a liquefaction reaction, immediately heating the mixture at 125° C. to 145° C. to inactivate the heat-resistant alpha-amylase, and obtaining a liquefied starch solution including liquefied starch having a dextrose equivalent (DE) value of 2 to 10, and adding a branching enzyme to the liquefied starch solution in an amount of 0.6% (w/w) or more based on the dry weight of starch, proceeding with a branching reaction for 20 hour or more to generate branched dextrin, and then obtaining a solution with branched dextrin comprising branched dextrin having a dextrose equivalent (DE) value of 2 to 10 which stably controls the dextrose equivalent (DE) value of branched dextrin, and significantly suppresses the white turbidity that occurs during refrigeration.

Abstract: Provided is a polyurethane polishing pad. More specifically, the present invention provides a polyurethane polishing pad having an interpenetrating network structure of a vinyl polymer with a polyurethane matrix via radical polymerization and having no pores and gas bubbles. The polyurethane polishing pad having an interpenetrating network structure of a vinyl polymer exhibits uniform dispersibility and reduced changes in hardness of the urethane pad due to heat and slurry, thereby resulting in no deterioration of polishing efficiency due to abrasion heat and solubility in the slurry upon polishing, and also enables a high-temperature polishing operation. Further, according to the present invention, the interpenetrating network structure leads to an improved polishing rate and abrasion performance, thereby significantly increasing the service life of the polishing pad.

Abstract: There is provided a chemical mechanical polishing (CMP) pad including a core of a polymer shell encapsulating a liquid organic material having one of a boiling point and a decomposition point of 130° C. or more in a polymer matrix, the CMP pad having open pores formed by the core on a polishing surface thereof, and a method of producing the CMP pad. The CMP pad having a high hardness and a high density improves polishing efficiency and flatness of a wafer and maintains a uniform size of the core, thereby producing pads having high polishing efficiency and stable polishing performance.

Abstract: Provided is a polyurethane polishing pad. More specifically, the present invention provides a polyurethane polishing pad having an interpenetrating network structure of a vinyl polymer with a polyurethane matrix via radical polymerization and having no pores and gas bubbles. The polyurethane polishing pad having an interpenetrating network structure of a vinyl polymer exhibits uniform dispersibility and reduced changes in hardness of the urethane pad due to heat and slurry, thereby resulting in no deterioration of polishing efficiency due to abrasion heat and solubility in the slurry upon polishing, and also enables a high-temperature polishing operation. Further, according to the present invention, the interpenetrating network structure leads to an improved polishing rate and abrasion performance, thereby significantly increasing the service life of the polishing pad.

Abstract: Disclosed is a base pad of polishing pad, which is used in conjunction with polishing slurry during a chemical-mechanical polishing or planarizing process, and a multilayer pad using the same. Since the base pad according to the present invention does not have fine pores, it is possible to prevent permeation of polishing slurry and water and to avoid non uniformity of physical properties. Thereby, it is possible to lengthen the lifetime of the polishing pad.

Abstract: Disclosed is a base pad of polishing pad, which is used in conjunction with polishing slurry during a chemical-mechanical polishing or planarizing process, and a multilayer pad using the same. Since the base pad according to the present invention does not have fine pores, it is possible to prevent premeation of polishing slurry and water and to avoid nonuniformity of physical properties. Thereby, it is possible to lengthen the lifetime of the polishing pad.