Patents by Inventor Ju-Ying CHEN

Ju-Ying CHEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250093278
    Abstract: In a method for inspecting pattern defects, a plurality of patterns are formed over an underlying layer. The plurality of patterns are electrically isolated from each other. A part of the plurality of patterns are scanned with an electron beam to charge the plurality of patterns. An intensity of secondary electrons emitted from the scanned part of the plurality of patterns is obtained. One or more of the plurality of patterns that show an intensity of the secondary electrons different from others of the plurality of patterns are searched.
    Type: Application
    Filed: November 27, 2024
    Publication date: March 20, 2025
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ju-Ying CHEN, Che-Yen LEE, Chia-Fong CHANG, Hua-Tai LIN, Te-Chih HUANG, Chi-Yuan SUN, Jiann Yuan HUANG
  • Patent number: 12196687
    Abstract: In a method for inspecting pattern defects, a plurality of patterns are formed over an underlying layer. The plurality of patterns are electrically isolated from each other. A part of the plurality of patterns are scanned with an electron beam to charge the plurality of patterns. An intensity of secondary electrons emitted from the scanned part of the plurality of patterns is obtained. One or more of the plurality of patterns that show an intensity of the secondary electrons different from others of the plurality of patterns are searched.
    Type: Grant
    Filed: October 29, 2020
    Date of Patent: January 14, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ju-Ying Chen, Che-Yen Lee, Chia-Fong Chang, Hua-Tai Lin, Te-Chih Huang, Chi-Yuan Sun, Jiann Yuan Huang
  • Publication number: 20210270751
    Abstract: In a method for inspecting pattern defects, a plurality of patterns are formed over an underlying layer. The plurality of patterns are electrically isolated from each other. A part of the plurality of patterns are scanned with an electron beam to charge the plurality of patterns. An intensity of secondary electrons emitted from the scanned part of the plurality of patterns is obtained. One or more of the plurality of patterns that show an intensity of the secondary electrons different from others of the plurality of patterns are searched.
    Type: Application
    Filed: October 29, 2020
    Publication date: September 2, 2021
    Inventors: Ju-Ying CHEN, Che-Yen LEE, Chia-Fong CHANG, Hua-Tai LIN, Te-Chih HUANG, Chi-Yuan SUN, Jiann Yuan HUANG