Abstract: A memory controller comprises a processing circuit configured to control a non-volatile memory to write data to sub-blocks included in a first super-block in a parallel manner to each other, in response to a first write command from a host, an indexer configured to assign respectively different indices from 1 to n to sub-blocks included in each of a plurality of memory blocks of the non-volatile memory based on a characteristic parameter, in response to a stripe request from the processing circuit, in which n is a natural number greater than or equal to 2, and a super-block constructor configured to select one sub-block from each of the plurality of memory blocks and assemble a first selected sub-blocks so that the first selected sub-blocks have at least indices from 1 to n.

Abstract: A nonvolatile memory device may include processing circuitry configured to receive a read command, a start read address, and a data chunk indicator, the read command including a page read command and a data read command, and the start read address including a start row address and a start column address, a memory cell array configured to output first page data based on the start row address, the first page data including a plurality of first data chunks, and the processing circuitry further configured to output one or more of the plurality of first data chunks based on the data chunk indicator.

Abstract: An organic light emitting diode (OLED) includes a first emitting material layer disposed adjacently to a first electrode and a second emitting material layer disposed adjacently to a second electrode. The first emitting material layer includes a first compound having high affinity to holes and a second compound of thermally activated delayed fluorescent material, and the second emitting material layer includes a fourth compound having high affinity to electrons and implementing triplet-triplet annihilation. Two emitting material layers having adjusted energy levels allow the OLED to lower its driving voltages and improve its luminous efficiency and luminous lifetime.

Abstract: The present disclosure provides an organic light emitting diode including a first electrode; a second electrode facing the first electrode; and an emitting material layer including a first compound and a second compound positioned between the first and second electrodes, wherein the first compound includes a hexagonal-ring moiety including one boron atom, one oxygen atom and four carbon atoms, and the second compound includes a hexagonal-ring moiety including one boron atom, one nitrogen atom and four carbon atoms, and an organic light emitting device including the organic light emitting diode.

Abstract: The present disclosure provides a compound of a specific chemical structure or a pharmaceutically acceptable salt thereof, which has the activity of inhibiting and/or degrading mutant EGFR protein. The present disclosure also provides a composition comprising such a compound or a pharmaceutically acceptable salt thereof. The present disclosure provides a pharmaceutical use of a compound according to the present disclosure, a salt thereof, and a composition comprising same for the treatment or prevention of cancer with EGFR mutation, especially lung cancer. The present disclosure also provides a method for treatment or prevention of EGFR mutation cancer, especially lung cancer, the method comprising administering an effective amount of the compound according to the present invention, a salt thereof, or a composition containing same to a subject in need of treatment.

Abstract: A storage device includes a memory device including a metadata area and a journal data area. A memory controller is configured to control the memory device to write a metadata block to the metadata area and to write a journal data block to the journal data area. The metadata block includes metadata, and the journal data block includes both journal data and metadata storage information. The journal data includes log information pertaining to the metadata, and the metadata storage information includes information pertaining to storage of the metadata block.

Abstract: The present invention relates to a novel compound and a medicinal use of the novel compound. In particular, the present invention relates to a novel compound useful for the treatment and/or prevention of muscular dystrophy, including Duchenne muscular atrophy, and a medicinal use of the novel compound.

Abstract: The present invention relates to a novel compound and a medicinal use of the novel compound. In particular, the present invention relates to a novel compound useful for the treatment and/or prevention of muscular dystrophy, including Duchenne muscular atrophy, and a medicinal use of the novel compound.

Abstract: A method of writing data in a storage device including sequentially receiving a plurality of data write commands, sequentially assigning a plurality of write data corresponding to the plurality of data write commands to a plurality of buffer groups by determining continuity of logical addresses of the plurality of write data such that each of the plurality of buffer groups temporarily stores some of the plurality of write data included in a respective single stream and having consecutive logical addresses, assigning a plurality of serial numbers to the plurality of write data, respectively, based on an order in which the plurality of write data are assigned to the plurality of buffer groups, programming the plurality of write data temporarily stored in the plurality of buffer groups into a plurality of memory blocks, and updating a logical-to-physical mapping table based on the plurality of serial numbers may be provided.

Abstract: The present disclosure provides an organic light emitting diode including a first electrode; a second electrode facing the first electrode; and an emitting material layer including a first compound and a second compound positioned between the first and second electrodes, wherein the first compound includes a hexagonal-ring moiety including one boron atom, one oxygen atom and four carbon atoms, and the second compound includes a hexagonal-ring moiety including one boron atom, one nitrogen atom and four carbon atoms, and an organic light emitting device including the organic light emitting diode.

Abstract: An organic light emitting diode (OLED) includes a first emitting material layer disposed adjacently to a first electrode and a second emitting material layer disposed adjacently to a second electrode. The first emitting material layer includes a first compound having high affinity to holes and a second compound of thermally activated delayed fluorescent material, and the second emitting material layer includes a fourth compound having high affinity to electrons and implementing triplet-triplet annihilation. Two emitting material layers having adjusted energy levels allow the OLED to lower its driving voltages and improve its luminous efficiency and luminous lifetime.

Abstract: A storage device includes at least one nonvolatile memory device including a plurality of memory blocks, the nonvolatile memory device configured to store user data and meta data in the plurality of memory blocks, and a device controller configured to control the nonvolatile memory device, to calculate a user cost corresponding to a time of memory accesses to the user data to be performed at garbage collection with respect to each of the plurality of memory blocks, to calculate a meta cost corresponding to a time of memory accesses to the meta data to be performed at the garbage collection with respect to each of the plurality of memory blocks, to select a victim block among the plurality of memory blocks based on the user cost and the meta cost, and to perform the garbage collection on the victim block.

Abstract: A method of operating a storage device including a non-volatile memory includes receiving a write command from a host in a first state, receiving write data from the host in a second state, and transitioning an operation state from the second state to one of the first state and a third state based on a write mode chosen. The write command is received in the first state, and the received write data is programmed to the non-volatile memory in the third state.

Abstract: A storage device includes a memory device including a metadata area and a journal data area. A memory controller is configured to control the memory device to write a metadata block to the metadata area and to write a journal data block to the journal data area. The metadata block includes metadata, and the journal data block includes both journal data and metadata storage information. The journal data includes log information pertaining to the metadata, and the metadata storage information includes information pertaining to storage of the metadata block.

Abstract: A method of writing data in a storage device including sequentially receiving a plurality of data write commands, sequentially assigning a plurality of write data corresponding to the plurality of data write commands to a plurality of buffer groups by determining continuity of logical addresses of the plurality of write data such that each of the plurality of buffer groups temporarily stores some of the plurality of write data included in a respective single stream and having consecutive logical addresses, assigning a plurality of serial numbers to the plurality of write data, respectively, based on an order in which the plurality of write data are assigned to the plurality of buffer groups, programming the plurality of write data temporarily stored in the plurality of buffer groups into a plurality of memory blocks, and updating a logical-to-physical mapping table based on the plurality of serial numbers may be provided.

Abstract: A memory device and a dynamic garbage collection method thereof are provided. The method includes receiving a minimum operating speed, ascertaining a reference valid page count ratio (VPC), using a maximum operating speed, the minimum operating speed, and a garbage collection speed, the reference VPC ratio being ascertained by the following formula 1 and determining whether to perform a garbage collection, using the reference VPC ratio and a current average VPC ratio. <Formula 1> Vr=Gp (Jp?Mp)/(Jp*Mp+(Gp*(Jp?Mp))) Here, Vr is the reference VPC ratio, Gp is the garbage collection speed, Jp is the maximum operating speed, and Mp is the minimum operating speed.

Abstract: The present disclosure relates to a technique for improving the ionic conductivity by introducing an electric field concept to a process for preparing an ion exchange membrane and deflecting an ion channel within an ion exchange membrane in one direction, and specifically to a device for fabricating an ion exchange membrane and a method therefor in a roll-to-roll manner and a casting manner with a deflected ion channel which can improve the ionic conductivity of the ion exchange membrane by reducing a travelling distance of the ions in the deflected ion channels.

Abstract: A storage device includes at least one nonvolatile memory device including a plurality of memory blocks, the nonvolatile memory device configured to store user data and meta data in the plurality of memory blocks, and a device controller configured to control the nonvolatile memory device, to calculate a user cost corresponding to a time of memory accesses to the user data to be performed at garbage collection with respect to each of the plurality of memory blocks, to calculate a meta cost corresponding to a time of memory accesses to the meta data to be performed at the garbage collection with respect to each of the plurality of memory blocks, to select a victim block among the plurality of memory blocks based on the user cost and the meta cost, and to perform the garbage collection on the victim block.

Abstract: A touch display device includes a touch display panel for displaying an image corresponding to a touch applied from outside the touch display device, a gate driver for sequentially driving all gate lines of the touch display panel once during a unit field period including at least two continuous field periods, in such a manner that a total gate driving period corresponding to a sum of individual gate driving periods of all gate lines is shorter than the unit field period, and a touch control unit for defining periods of the unit field period other than the total gate driving period, as a touch sensing period, and performing an operation for sensing a touch on the touch display panel during the touch sensing period.

Abstract: A memory device and a dynamic garbage collection method thereof are provided. The method includes receiving a minimum operating speed, ascertaining a reference valid page count ratio (VPC), using a maximum operating speed, the minimum operating speed, and a garbage collection speed, the reference VPC ratio being ascertained by the following formula 1 and determining whether to perform a garbage collection, using the reference VPC ratio and a current average VPC ratio. <Formula 1> Vr=Gp (Jp?Mp)/(Jp*Mp+(Gp*(Jp?Mp))) Here, Vr is the reference VPC ratio, Gp is the garbage collection speed, Jp is the maximum operating speed, and Mp is the minimum operating speed.