Abstract: A metal wiring layer of a semiconductor device in which a nucleation liner is formed prior to forming an aluminum liner. A barrier metal layer is formed on a semiconductor substrate. A nucleation liner for growing an aluminum layer is formed on the barrier metal layer in a vacuum state. An aluminum liner is formed by growing an aluminum layer on the nucleation liner using chemical vapor deposition in a vacuum state in situ with the step of forming the nucleation liner. A metal layer is formed on the aluminum liner using physical vapor deposition. The semiconductor substrate is heat-treated and reflowed.

Abstract: A process for preparing a diffusion barrier on a semiconductor substrate which comprises: conducting remote plasma-enhanced metal organic chemical vapor deposition of a thin film of TiNx on said substrate using an organotitanium compound under a flow of H2 plasma, wherein x ranges from 0.1 to 1.5, provides a TiNx thin film having a low carbon content and low specific resistivity.