Patents by Inventor Ju Zhang

Ju Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10425011
    Abstract: A full bridge circuit is disclosed. The full bridge circuit includes first and second half bridge circuits each having a midpoint node, and a transmitter tank circuit connected across the midpoint nodes and configured to transmit power based on the transmitter tank current to a load. The full bridge circuit also includes a ZVS tank circuit connected across the midpoint nodes. The ZVS tank circuit generates first and second ZVS tank currents. The first ZVS tank current and the transmitter tank current cooperatively cause the voltage at the first midpoint node to be substantially equal to the voltage of a power or ground node, and the second ZVS tank current and the transmitter tank current cooperatively cause the voltage at the second midpoint node to be substantially equal to the voltage of the power or ground node.
    Type: Grant
    Filed: December 28, 2018
    Date of Patent: September 24, 2019
    Assignee: Navitas Semiconductor, Inc.
    Inventors: Lingxiao Xue, Ju Zhang
  • Patent number: 10396579
    Abstract: An electronic circuit is disclosed. The electronic circuit includes a GaN substrate, a first power supply node on the substrate, an output node, a signal node, and an output component on the substrate, where the output component is configured to generate a voltage at the output node based at least in part on a voltage at the signal node. The electronic circuit also includes a capacitor coupled to the signal node, where, the capacitor is configured to selectively cause the voltage at the signal node to be greater than the voltage of the first power supply node, such that the output component causes the voltage at the output node to be substantially equal to the voltage of the first power supply node.
    Type: Grant
    Filed: July 24, 2017
    Date of Patent: August 27, 2019
    Assignee: NAVITAS SEMICONDUCTOR, INC.
    Inventors: Daniel Marvin Kinzer, Santosh Sharma, Ju Zhang
  • Patent number: 10363357
    Abstract: A system is for contrast agent-based medical imaging. In an embodiment, the system includes a gantry of a medical imaging device; a contrast agent injection device; and a support arm including a frame element, a first connecting element and a second connecting element. In an embodiment, the frame element is connected to a stationary support frame of the gantry via the first connecting element such that at least part of the frame element is mounted to be movable relative to the stationary support frame of the gantry, and the contrast agent injection device is connected to at least part of the frame element via the second connecting element such that the contrast agent injection device is mounted to be movable relative to at least part of the frame element.
    Type: Grant
    Filed: October 18, 2016
    Date of Patent: July 30, 2019
    Assignee: SIEMENS HEALTHCARE GMBH
    Inventors: Wen Ju Zhang, Lisa Vallines, Daniel Lerch, Carsten Thierfelder, Yi Mian Wang
  • Publication number: 20190175278
    Abstract: The present invention relates to orthopaedic implants and has particular relevance to determining the placement of fixation apparatus or devices, such as screws, which are used to fix implants to the bone or bones with which the implants are to be connected. More particularly, the invention relates to a method for determining placement of a fixation apparatus for fixing an orthopaedic implant to bone, and the method comprising: selecting a plurality of fixation locations; using a bone density model to determine bone density associated with each location; and selecting a combination or permutation of the fixation locations dependent on the determined bone density.
    Type: Application
    Filed: December 13, 2018
    Publication date: June 13, 2019
    Inventor: Ju Zhang
  • Patent number: 10305472
    Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments, a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions.
    Type: Grant
    Filed: April 24, 2018
    Date of Patent: May 28, 2019
    Assignee: Navitas Semiconductor, Inc.
    Inventors: Daniel Marvin Kinzer, Santosh Sharma, Ju Zhang
  • Publication number: 20190158086
    Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments, a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions.
    Type: Application
    Filed: April 24, 2018
    Publication date: May 23, 2019
    Inventors: Daniel Marvin Kinzer, Santosh Sharma, Ju Zhang
  • Publication number: 20190149057
    Abstract: A converter circuit is disclosed. The converter circuit includes a transformer and a primary circuit connected to the primary side of the transformer, where the primary circuit includes a first switch connected to a ground. The converter circuit also includes a second switch connected to the first switch, and a clamping capacitor connected to the second switch and to the input. The converter circuit also includes a secondary circuit connected to the secondary side of the transformer, where the secondary circuit includes a rectifying element, and an output capacitor connected to the rectifying element. In addition, the output capacitor has a substantial effect on resonance of the converter circuit.
    Type: Application
    Filed: September 5, 2018
    Publication date: May 16, 2019
    Inventors: Lingxiao Xue, Ju Zhang
  • Patent number: 10291141
    Abstract: A converter circuit is disclosed. The converter circuit includes a transformer and a primary circuit connected to the primary side of the transformer, where the primary circuit includes a first switch connected to a ground. The converter circuit also includes a second switch connected to the first switch, and a clamping capacitor connected to the second switch and to the input. The converter circuit also includes a secondary circuit connected to the secondary side of the transformer, where the secondary circuit includes a rectifying element, and an output capacitor connected to the rectifying element. In addition, the output capacitor has a substantial effect on resonance of the converter circuit.
    Type: Grant
    Filed: September 5, 2018
    Date of Patent: May 14, 2019
    Assignee: Navitas Semiconductor, Inc.
    Inventors: Lingxiao Xue, Ju Zhang
  • Patent number: 10277048
    Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions. Some devices employ electro-static discharge circuits and features formed within the GaN-based devices to improve the reliability and performance of the half bridge power conversion circuits.
    Type: Grant
    Filed: December 11, 2017
    Date of Patent: April 30, 2019
    Assignee: Navitas Semiconductor, Inc.
    Inventors: Daniel Marvin Kinzer, Santosh Sharma, Ju Zhang
  • Publication number: 20190103748
    Abstract: A charging device, a charging method and a terminal, an output end of the main charging circuit and output ends of the at least two secondary charging circuits are connected to a battery of an electronic device, and the output end of the main charging circuit is used for supplying power to an internal chip of the electronic device, disconnecting a connection between the main charging circuit and the battery when a voltage of the output end of the main charging circuit reaches a voltage required by the internal chip, and supplying power for the battery through the output ends of the at least two secondary charging circuits. in this way, charging time is shortened and a purpose of fast charging a battery is achieved.
    Type: Application
    Filed: March 31, 2016
    Publication date: April 4, 2019
    Inventor: JU-ZHANG WU
  • Patent number: 10236877
    Abstract: A half bridge GaN circuit is disclosed. The circuit includes a low side power switch, a high side power switch, and a high side power switch controller, configured to control the conductivity of the high sigh power switch based on the one or more input signals. The high side power switch controller includes a receiver input reset circuit configured to simultaneously receive first and second signals, wherein the first signal corresponds with the high side power switch being turned on, wherein the first signal corresponds with the high side power switch controller turning on the high side power switch, wherein the second signal corresponds with the high side power switch controller turning off the high side power switch, and wherein the receiver input reset circuit is further configured, in response to the first and second signals, to prevent the high side power switch from becoming non-conductive.
    Type: Grant
    Filed: September 26, 2018
    Date of Patent: March 19, 2019
    Assignee: NAVITAS SEMICONDUCTOR, INC.
    Inventors: Santosh Sharma, Daniel Marvin Kinzer, Ju Zhang
  • Publication number: 20190067974
    Abstract: A charging current regulation method, a regulation device and a terminal are provided, the method includes: when charging a terminal, detecting temperature values of working components corresponding to each of a plurality of charging integrated circuits in the terminal (202); according to the temperature values of the working components corresponding to each charging integrated circuit, determining final temperature values of the working components corresponding to each charging integrated circuit (204); regulating charging current of the plurality of charging integrated circuits according to a plurality of final temperature values (206). According to the method, when charging a terminal, equalization of a temperature rise of working components in the terminal in different application scenarios can be ensured, thus the temperature rise of the working components in the terminal is prevented from being too high.
    Type: Application
    Filed: March 31, 2016
    Publication date: February 28, 2019
    Inventors: ZHAO-GANG DING, JU-ZHANG WU
  • Patent number: 10205447
    Abstract: A power drive circuit is disclosed. The power circuit includes: a pulse detector, configured to generate first and second control signals in response to first and second pulse signals, respectively. The power drive circuit also includes a state storage device, configured to generate first and second driver input signals in response to the first and second control signals, respectively. The power drive circuit also includes a driver configured to generate first and second gate drive signals in response to the first and second driver input signals, respectively. The power drive circuit also includes a power switch, configured to receive the first and second gate drive signals, where the first and second gate drive signals control the power switch to selectively conduct or not conduct current between first and second terminals.
    Type: Grant
    Filed: July 27, 2018
    Date of Patent: February 12, 2019
    Assignee: Navitas Semiconductor, Inc.
    Inventors: Thomas Ribarich, Ju Zhang
  • Publication number: 20190044357
    Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.
    Type: Application
    Filed: October 4, 2018
    Publication date: February 7, 2019
    Inventors: Daniel Marvin Kinzer, Santosh Sharma, Ju Zhang
  • Patent number: 10186971
    Abstract: A full bridge circuit is disclosed. The full bridge circuit includes first and second half bridge circuits each having a midpoint node, and a transmitter tank circuit connected across the midpoint nodes and configured to transmit power based on the transmitter tank current to a load. The full bridge circuit also includes a ZVS tank circuit connected across the midpoint nodes. The ZVS tank circuit generates first and second ZVS tank currents. The first ZVS tank current and the transmitter tank current cooperatively cause the voltage at the first midpoint node to be substantially equal to the voltage of a power or ground node, and the second ZVS tank current and the transmitter tank current cooperatively cause the voltage at the second midpoint node to be substantially equal to the voltage of the power or ground node.
    Type: Grant
    Filed: February 28, 2017
    Date of Patent: January 22, 2019
    Assignee: Navitas Semiconductor, Inc.
    Inventors: Lingxiao Xue, Ju Zhang
  • Patent number: 10170922
    Abstract: An electronic circuit is disclosed. The electronic circuit includes a GaN substrate, a first power supply node on the substrate, an output node, a signal node, and an output component on the substrate, where the output component is configured to generate a voltage at the output node based at least in part on a voltage at the signal node. The electronic circuit also includes a capacitor coupled to the signal node, where, the capacitor is configured to selectively cause the voltage at the signal node to be greater than the voltage of the first power supply node, such that the output component causes the voltage at the output node to be substantially equal to the voltage of the first power supply node.
    Type: Grant
    Filed: February 23, 2018
    Date of Patent: January 1, 2019
    Assignee: Navitas Semiconductor, Inc.
    Inventors: Daniel Marvin Kinzer, Santosh Sharma, Ju Zhang
  • Patent number: 10110221
    Abstract: A half bridge GaN circuit is disclosed. The circuit includes a low side power switch, a high side power switch, and a high side power switch controller, configured to control the conductivity of the high sigh power switch based on the one or more input signals. The high side power switch controller includes a receiver input reset circuit configured to simultaneously receive first and second signals, wherein the first signal corresponds with the high side power switch being turned on, wherein the first signal corresponds with the high side power switch controller turning on the high side power switch, wherein the second signal corresponds with the high side power switch controller turning off the high side power switch, and wherein the receiver input reset circuit is further configured, in response to the first and second signals, to prevent the high side power switch from becoming non-conductive.
    Type: Grant
    Filed: February 21, 2018
    Date of Patent: October 23, 2018
    Assignee: Navitas Semiconductor, Inc.
    Inventors: Santosh Sharma, Daniel Marvin Kinzer, Ju Zhang
  • Patent number: 10097100
    Abstract: A converter circuit is disclosed. The converter circuit includes a transformer and a primary circuit connected to the primary side of the transformer, where the primary circuit includes a first switch connected to a ground. The converter circuit also includes a second switch connected to the first switch, and a clamping capacitor connected to the second switch and to the input. The converter circuit also includes a secondary circuit connected to the secondary side of the transformer, where the secondary circuit includes a rectifying element, and an output capacitor connected to the rectifying element. In addition, the output capacitor has a substantial effect on resonance of the converter circuit.
    Type: Grant
    Filed: February 8, 2018
    Date of Patent: October 9, 2018
    Assignee: Navitas Semiconductor, Inc.
    Inventors: Lingxiao Xue, Ju Zhang
  • Patent number: 10044350
    Abstract: A power drive circuit is disclosed. The power circuit includes: a pulse detector, configured to generate first and second control signals in response to first and second pulse signals, respectively. The power drive circuit also includes a state storage device, configured to generate first and second driver input signals in response to the first and second control signals, respectively. The power drive circuit also includes a driver configured to generate first and second gate drive signals in response to the first and second driver input signals, respectively. The power drive circuit also includes a power switch, configured to receive the first and second gate drive signals, where the first and second gate drive signals control the power switch to selectively conduct or not conduct current between first and second terminals.
    Type: Grant
    Filed: September 8, 2017
    Date of Patent: August 7, 2018
    Assignee: Navitas Semiconductor, Inc.
    Inventors: Thomas Ribarich, Ju Zhang
  • Patent number: D854310
    Type: Grant
    Filed: May 24, 2018
    Date of Patent: July 23, 2019
    Assignee: Siemens Healthcare GmbH
    Inventors: Hai Tao Xie, Wen Ju Zhang, Daniel Lerch