Abstract: The present disclosure is directed to a non-destructive process for removing metals, metal ions and metal oxides in alumina-based materials without destroying alumina, allowing the regeneration of alumina-based catalysts. The non-destructive process uses an extracting agent that sequesters metals, metal ions and/or metal oxides present in alumina-based materials without destroying the alumina, allowing the regeneration of alumina-based catalysts.

Abstract: The present disclosure describes a non-destructive process for removing metals, metal ions and metal oxides present in alumina-based materials without destroying alumina, allowing the regeneration of alumina-based catalysts. Known conventional procedures and/or methods for removing metals, metal ions and metal oxides present in alumina-based materials use some inorganic acid or its mixtures to carry out digestion, which modifies the properties of alumina and those of any other element contained in the material, destroying alumina and preventing its reuse. The present disclosure is characterized by using an extracting agent that sequesters metals, metal ions and/or metal oxides present in alumina-based materials without modifying their properties. The employed extracting agent is an alcohol. The non-destructive process introduced in the present invention reaches metal (M) removal rates of at least 42% when using a continuous flow reactor and of at least 27% when a batch reactor is employed.

Abstract: A semiconductor material basically consists of titanium oxide, with the special feature of being like nanostructures, which gives special physicochemical properties, with ability to disperse and stabilize metal particles with high activity and selectivity in catalytic processes mainly. The process of producing the semiconductor material includes adding a titanium alkoxide to an alcoholic solution, adding an acid to the alcoholic solution, controlling the pH from 1 to 5; subjecting the acidic solution to agitation and reflux conditions at 70 to 80° C.; stabilizing the medium and adding bidistilled water in a water/alkoxide molar ratio of 1-2/0.100-0.150, continuing with reflux until gelation; aging the gel for 1 to 24 hours for complete formation of the titania; drying the titania nanostructured at of 50 to 80° C. for about 1 to 24 hours, and subjecting the dried titania to a calcination step at 200 to 600° C. for 1 to 12 hours.

Abstract: A semiconductor material basically consists of titanium oxide, with the special feature of being like nanostructures, which gives special physicochemical properties, with ability to disperse and stabilize metal particles with high activity and selectivity in catalytic processes mainly. The process of producing the semiconductor material includes adding a titanium alkoxide to an alcoholic solution, adding an acid to the alcoholic solution, controlling the pH from 1 to 5; subjecting the acidic solution to agitation and reflux conditions at 70 to 80° C.; stabilizing the medium and adding bidistilled water in a water/alkoxide molar ratio of 1-2/0.100-0.150, continuing with reflux until gelation; aging the gel for 1 to 24 hours for complete formation of the titania; drying the titania nanostructured at of 50 to 80° C. for about 1 to 24 hours, and subjecting the dried titania to a calcination step at 200 to 600° C. for 1 to 12 hours.

Abstract: A nanostructured titania semiconductor material termed TSG-IMP having a predetermined crystal size is produced by a sol-gel method by adding a titanium alkoxide to an alcoholic solution, adding an acid to the alcoholic solution, subjecting the acidic solution to agitation under reflux conditions; stabilizing the medium and adding bidistilled water under reflux until gelation; subjecting the gel to aging until complete formation of the titania which is dried and calcined.

Abstract: A nanostructured titania semiconductor material termed TSG-IMP having a predetermined crystal size is produced by a sol-gel method by adding a titanium alkoxide to an alcoholic solution, adding an acid to the alcoholic solution, subjecting the acidic solution to agitation under reflux conditions: stabilizing the medium and adding bidistilled water under reflux until gelation; subjecting the gel to aging until complete formation of the titania which is dried and calcined.

Abstract: A method for manufacturing relief printing plates made of a photo-sensitive polymeric material, including the steps of providing a photographic negative having opaque areas and transparent areas defining a desired printing relief pattern, applying a layer of viscous photo-sensitive resin on the photographic negative, providing a flexible support base having a roughened surface, and applying it onto the layer of viscous resin with the roughened surface contacting the layer of resin, projecting ultra-violet radiation on the negative for hardening any of the resin which is exposed to the ultra-violet radiation through the transparent areas of the negative thereby forming the printing relief and causing the resin to adhere to the roughened surface during the hardening thereof, and removing the negative and recovering any of the resin which was behind the opaque areas of the negative and was not hardened.