Abstract: A processing chamber may include a gas distribution member, a substrate support, and a pumping liner. The gas distribution member and the substrate support may at least in part define a processing volume. The pumping liner may define an internal volume in fluid communication with the processing volume via a plurality of apertures of the pumping liner circumferentially disposed about the processing volume. The processing chamber may further include a flow control mechanism operable to direct fluid flow from the internal volume of the pumping liner into the processing volume via a subset of the plurality of apertures of the pumping liner during fluid distribution into the processing volume from the gas distribution member.

Abstract: A processing chamber may include a gas distribution member, a metal ring member below the gas distribution member, and an isolating assembly coupled with the metal ring member and isolating the metal ring member from the gas distribution member. The isolating assembly may include an outer isolating member coupled with the metal ring member. The outer isolating member may at least in part define a chamber wall. The isolating assembly may further include an inner isolating member coupled with the outer isolating member. The inner isolating member may be disposed radially inward from the metal ring member about an central axis of the processing chamber. The inner isolating member may define a plurality of openings configured to provide fluid access into a radial gap between the metal ring member and the inner isolating member.

Abstract: Exemplary support assemblies may include an electrostatic chuck body defining a substrate support surface. The assemblies may include a support stem coupled with the electrostatic chuck body. The assemblies may include a heater embedded within the electrostatic chuck body. The assemblies may also include an electrode embedded within the electrostatic chuck body between the heater and the substrate support surface. The substrate support assemblies may be characterized by a leakage current through the electrostatic chuck body of less than or about 4 mA at a temperature of greater than or about 500° C. and a voltage of greater than or about 600 V.

Abstract: An apparatus and method of forming fluxless solder balls includes forming solder balls from a supply of solder. A coating is formed on the solder balls for limiting naturally occurring oxide growth on the solder balls before significant natural oxide growth on the solder balls has occurred. The coating allows the solder balls to be soldered without using flux.

Abstract: One embodiment of the present invention is a method for depositing low-k dielectric films that includes steps of: (a) CVD-depositing a low-k dielectric film; and (b) plasma treating the CVD-deposited, low-k dielectric film.