Abstract: Substrate support assemblies may include an electrostatic chuck body defining a substrate support surface that defines a substrate seat. Assemblies may include a support stem coupled with the electrostatic chuck body. Assemblies may include a first bipolar electrode embedded within the electrostatic chuck body. Assemblies may include a second bipolar electrode embedded within the electrostatic chuck body radially inward of at least a portion of the first bipolar electrode and coaxial with the first bipolar electrode. Assemblies may include an annular electrode disposed about the first bipolar electrode, where the annular electrode is DC floated and RF powered and exhibits an induced DC current.

Abstract: Exemplary substrate support assemblies may include a support plate that comprises a substrate support surface. The assemblies may include a support stem coupled with the support plate. A channel may be defined through at least a portion of a length of the support stem and extends through the substrate support surface. A temperature sensor assembly may be disposed within the channel. The temperature sensor assembly may include a light pipe disposed within the channel such that a top end of the light pipe extending through at least a portion of the support plate. The temperature sensor assembly may include a sensor that is coupled with a bottom end of the light pipe.

Abstract: A semiconductor processing chamber may include a pedestal configured to support a substrate during a plasma-enhanced chemical-vapor deposition (PECVD) process that forms a film on a surface of the substrate. The chamber may also include one or more internal meshes embedded in the pedestal. The one or more internal meshes may be configured to deliver radio-frequency (RF) power to a plasma in the semiconductor processing chamber during the PECVD process. An outer diameter of the one or more internal meshes may be less that a diameter of the substrate. The chamber may further include an RF source configured to deliver the RF power to the one more internal meshes. This configuration may reduce arcing within the processing chamber.

Abstract: Exemplary substrate processing systems may include a plurality of processing regions. The systems may include a transfer region housing defining a transfer region fluidly coupled with the plurality of processing regions. The systems may include a plurality of substrate supports. Each substrate support of the plurality of substrate supports may be vertically translatable between the transfer region and an associated processing region of the plurality of processing regions. The systems may include a transfer apparatus including a rotatable shaft extending through the transfer region housing. The transfer apparatus may also include an end effector coupled with the rotatable shaft. The systems may include an exhaust foreline including a plurality of foreline tails. Each foreline tail of the plurality of foreline tails may be fluidly coupled with a separate processing region of the plurality of processing regions. The systems may include a plurality of throttle valves.

Abstract: Exemplary semiconductor processing systems may include a chamber body including sidewalls and a base. The chamber body may define an interior volume. The systems may include a substrate support extending through the base of the chamber body. The substrate support may be configured to support a substrate within the interior volume. The systems may include a faceplate positioned within the interior volume of the chamber body. The faceplate may define a plurality of apertures through the faceplate. The systems may include a leveling apparatus seated on the substrate support. The leveling apparatus may include a plurality of piezoelectric pressure sensors.

Abstract: A radio frequency (RF) source may be used to generate a capacitively coupled plasma to perform a plasma-based process on a substrate in a plasma processing chamber. A controller may cause the RF source and a switching element to route an RF signal to electrodes in the pedestal that generate the plasma in the processing chamber as part of a recipe performed on a substrate during etch or deposition processes. Between processes, the controller may cause the same RF source to generate a second RF signal that is instead routed by the switching element to inductive coils to generate an inductively coupled plasma for a cleaning process to remove film deposits on the interior of the plasma processing chamber.

Abstract: A processing chamber and port adaptor are provided. Processing chambers include a chamber body having a lid coupled to the first end of the chamber body, a gas ring adjacent the first end of the chamber body, and a substrate support, where a processing region is defined between the substrate support and the lid. The processing chamber includes a port adapter coupled to the second end of the chamber body. The port adapter includes a body defining a plurality of apertures in fluid communication with the processing region, where each of the apertures are spaced apart along the body such that a distance between adjacent apertures is within about 20% of an average aperture spacing distance, an individually controllable valve fluidly coupled to one or more of the plurality of apertures, and an exhaust system in fluid communication with a system foreline and the plurality of apertures.

Abstract: Exemplary processing systems may include a chamber body. The systems may include a pedestal configured to support a semiconductor substrate. The systems may include a faceplate. The chamber body, the pedestal, and the faceplate may define a processing region. The faceplate may be coupled with an RF power source. The systems may include a remote plasma unit. The remote plasma unit may be coupled at electrical ground. The systems may include a discharge tube extending from the remote plasma unit towards the faceplate. The discharge tube may define a central aperture. The discharge tube may be electrically coupled with each of the faceplate and the remote plasma unit. The discharge tube may include ferrite extending about the central aperture of the discharge tube.

Abstract: Exemplary support assemblies may include an electrostatic chuck body defining a support surface that defines a substrate seat. The assemblies may include a support stem coupled with the chuck body. The assemblies may include a heater embedded within the chuck body. The assemblies may include a first bipolar electrode embedded within the electrostatic chuck body between the heater and support surface. The assemblies may include a second bipolar electrode embedded within the chuck body between the heater and support surface. Peripheral edges of one or both of the first and second bipolar electrodes may extend beyond an outer periphery of the seat. The assemblies may include an RF power supply coupled with the first and second bipolar electrodes. The assemblies may include a first floating DC power supply coupled with the first bipolar electrode. The assemblies may include a second floating DC power supply coupled with the second bipolar electrode.

Abstract: Exemplary processing methods may include providing a component for semiconductor processing to a processing region of a processing chamber. The methods may include providing one or more interface deposition precursors to the processing region. The methods may include depositing a layer of interface material on the component for semiconductor processing in the processing region. The methods may include providing one or more coating deposition precursors to the processing region. The methods may include depositing a layer of coating material on the component for semiconductor processing in the processing region.

Abstract: The present disclosure generally relates to an apparatus for improving azimuthal uniformity of a pressure profile of a processing gas. In one example, a processing chamber includes a lid, sidewalls, and a substrate support defining a processing volume. A bottom bowl, a chamber base, and a wall define a purge volume. The purge volume is disposed beneath the processing volume. The bottom bowl includes a first surface having a first equalizer hole. A passage couples the processing volume to the purge volume via the first equalizer hole and an inlet. The passage is positioned above the first equalizer hole. The chamber base has a purge port coupleable to a purge gas line for supplying a purge gas to the purge volume. A baffle is disposed in the purge volume at a height above the purge port, and is configured to deflect a trajectory of the purge gas.

Abstract: A method and apparatus for a substrate support, comprising a ceramic body, at least one heater, at least one chucking electrode, and a unitary plasma support structure comprising an electrical connection portion, at least one electrical distribution portion, and annular electrode connected to the electrical connection portion by the at least one electrical distribution portion, the electrical connection portion, at least one electrical distribution portion, and annular electrode configured of a unitary sheet of a conductive fiber mesh.

Abstract: Exemplary semiconductor processing systems may include a chamber body including sidewalls and a base. The chamber body may define an interior volume. The systems may include a substrate support extending through the base of the chamber body. The substrate support may be configured to support a substrate within the interior volume. The systems may include a faceplate positioned within the interior volume of the chamber body. The faceplate may define a plurality of apertures through the faceplate. The systems may include a leveling apparatus seated on the substrate support. The leveling apparatus may include a plurality of piezoelectric pressure sensors.

Abstract: A faceplate for a substrate process chamber comprises a first and second surface. The second surface is shaped such that the second surface includes a peak and a distance between the first and second surface varies across the width of the faceplate. The second surface of the faceplate is exposed to a processing volume of the process chamber. Further, the faceplate may be part of a lid assembly for the process chamber. The lid assembly may include a blocker plate facing the first surface of the faceplate. A distance between the blocker plate and the first surface is constant.

Abstract: Exemplary processing methods may include providing a powder to a processing region of a processing chamber. The methods may include providing one or more deposition precursors to the processing region. The methods may include generating plasma effluents of the one or more deposition precursors. The methods may include depositing a layer of material on the powder in the processing region. The layer of material may include a corrosion-resistant material. A temperature within the processing chamber is maintained at less than or about 700° C.

Abstract: A substrate support assembly includes a shaft with a platen extending perpendicularly from the shaft at an upper end of the shaft. The shaft includes an electric line and a plurality of coolant conduits. A cooling plate including a coolant channel fluidically coupled to the coolant conduits is mounted to the platen, and extends beyond an outer rim of the platen. A puck assembly including a heater is mounted to the cooling plate. A simultaneous operation of the heater and a flow of coolant through the coolant channel regulates a temperature gradient across the puck assembly during a substrate processing operation.

Abstract: Exemplary substrate processing systems may include a chamber body defining a transfer region. The systems may include a lid plate seated on the chamber body. The lid plate may define a plurality of apertures. The systems may include a plurality of lid stacks equal to a number of the plurality of apertures. The systems may include a plurality of substrate support assemblies equal to the number of apertures defined through the lid plate. Each assembly may be disposed in one of the processing regions and may include an electrostatic chuck body defining a substrate support surface that defines a substrate seat. Each assembly may include a heater embedded within the chuck body. Each assembly may include bipolar electrodes between the heater and the substrate support surface. Each assembly may include a conductive mesh embedded within the body between the heater and bipolar electrodes.

Abstract: A chucking system reduces differences in chucking forces that are applied by two electrodes of an electrostatic chuck, to a substrate disposed atop the chuck. Initial chucking voltages are applied to each of two electrodes, and an initial current provided to at least a first electrode of the two electrodes is measured. A process is initiated that affects a DC voltage of the substrate, then a modified current provided to at least the first electrode is measured. A modified chucking voltage for a selected one of the two electrodes is determined that will reduce chucking force imbalance across the substrate based at least on the initial current and the modified current. The modified chucking voltage is then provided to the selected one of the two electrodes.

Abstract: Exemplary semiconductor processing systems include a processing chamber defining a processing region. The semiconductor processing systems may include a foreline coupled with the processing chamber. The foreline may define a fluid conduit. The semiconductor processing systems may include a foreline trap coupled with a distal end of the foreline. The semiconductor processing systems may include a removable insert provided within an interior of the foreline trap. The semiconductor processing systems may include a throttle valve coupled with the foreline trap downstream of the removable insert.

Abstract: Exemplary support assemblies may include an electrostatic chuck body defining a support surface that defines a substrate seat. The assemblies may include a support stem coupled with the chuck body. The assemblies may include a heater embedded within the chuck body. The assemblies may include a first bipolar electrode embedded within the electrostatic chuck body between the heater and support surface. The assemblies may include a second bipolar electrode embedded within the chuck body between the heater and support surface. Peripheral edges of one or both of the first and second bipolar electrodes may extend beyond an outer periphery of the seat. The assemblies may include an RF power supply coupled with the first and second bipolar electrodes. The assemblies may include a first floating DC power supply coupled with the first bipolar electrode. The assemblies may include a second floating DC power supply coupled with the second bipolar electrode.