Patents by Inventor Juan Carlos Rocha-Alvarez

Juan Carlos Rocha-Alvarez has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220181120
    Abstract: In some embodiments, the semiconductor process apparatus comprises a conductive support comprising mesh, a conductive shaft comprising a conductive rod, and a plurality of connection elements. The plurality of connection elements are coupled to the mesh in parallel and are connected to the rod at a single junction. The plurality of connection elements help spread RF current, reducing localized heating in the substrate, resulting in a more uniform film deposition. Additionally, using connection elements that are merged and coupled to a single RF rod allow for the rod to be made of materials that can conduct RF current at lower temperatures.
    Type: Application
    Filed: February 22, 2022
    Publication date: June 9, 2022
    Inventors: Jun MA, Jian LI, David H. QUACH, Amit Kumar BANSAL, Juan Carlos ROCHA-ALVAREZ
  • Publication number: 20220170151
    Abstract: Exemplary semiconductor processing systems include a processing chamber defining a processing region. The semiconductor processing systems may include a foreline coupled with the processing chamber. The foreline may define a fluid conduit. The semiconductor processing systems may include a foreline trap coupled with a distal end of the foreline. The semiconductor processing systems may include a removable insert provided within an interior of the foreline trap. The semiconductor processing systems may include a throttle valve coupled with the foreline trap downstream of the removable insert.
    Type: Application
    Filed: December 1, 2020
    Publication date: June 2, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Gaosheng Fu, Tuan A Nguyen, Amit Bansal, Karthik Janakiraman, Juan Carlos Rocha-Alvarez
  • Patent number: 11339475
    Abstract: An apparatus and a method for depositing a film layer that may have minimum contribution to overlay error after a sequence of deposition and lithographic exposure processes are provided. In one example, a method includes positioning a substrate on a substrate support in a process chamber, and flowing a deposition gas mixture comprising a silicon containing gas and a reacting gas to the process chamber through a showerhead having a convex surface facing the substrate support or a concave surface facing the substrate support in accordance with a stress profile of the substrate. A plasma is formed in the presence of the deposition gas mixture in the process chamber by applying an RF power to multiple coupling points of the showerhead that are symmetrically arranged about a center point of the showerhead. A deposition process is then performed on the substrate.
    Type: Grant
    Filed: November 8, 2019
    Date of Patent: May 24, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Xinhai Han, Deenesh Padhi, Daemian Raj Benjamin Raj, Kristopher Enslow, Wenjiao Wang, Masaki Ogata, Sai Susmita Addepalli, Nikhil Sudhindrarao Jorapur, Gregory Eugene Chichkanoff, Shailendra Srivastava, Jonghoon Baek, Zakaria Ibrahimi, Juan Carlos Rocha-Alvarez, Tza-Jing Gung
  • Publication number: 20220127723
    Abstract: Exemplary substrate support assemblies may include an electrostatic chuck body defining a support surface that defines a substrate seat. The substrate support surface may include a dielectric coating. The substrate support assemblies may include a support stem coupled with the electrostatic chuck body. The substrate support assemblies may include a cooling hub positioned below a base of the support stem and coupled with a cooling fluid source. The electrostatic chuck body may define at least one cooling channel that is in communication with a cooling fluid source. The substrate support assemblies may include a heater embedded within the electrostatic chuck body. The substrate support assemblies may include an AC power rod extending through the support stem and electrically coupled with the heater. The substrate support assemblies may include a plurality of voids formed within the electrostatic chuck body between the at least one cooling channel and the heater.
    Type: Application
    Filed: October 23, 2020
    Publication date: April 28, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Jian Li, Juan Carlos Rocha-Alvarez, Mayur Govind Kulkarni, Paul L. Brillhart, Vidyadharan Srinivasamurthy, Katherine Woo, Wenhao Zhang
  • Publication number: 20220130704
    Abstract: Exemplary support assemblies may include an electrostatic chuck body defining a support surface that defines a substrate seat. The assemblies may include a support stem coupled with the chuck body. The assemblies may include a heater embedded within the chuck body. The assemblies may include a first bipolar electrode embedded within the electrostatic chuck body between the heater and support surface. The assemblies may include a second bipolar electrode embedded within the chuck body between the heater and support surface. Peripheral edges of one or both of the first and second bipolar electrodes may extend beyond an outer periphery of the seat. The assemblies may include an RF power supply coupled with the first and second bipolar electrodes. The assemblies may include a first floating DC power supply coupled with the first bipolar electrode. The assemblies may include a second floating DC power supply coupled with the second bipolar electrode.
    Type: Application
    Filed: October 23, 2020
    Publication date: April 28, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Jian Li, Dmitry A. Dzilno, Juan Carlos Rocha-Alvarez, Zheng J. Ye, Paul L. Brillhart
  • Publication number: 20220130713
    Abstract: Exemplary processing systems may include a chamber body. The systems may include a pedestal configured to support a semiconductor substrate. The systems may include a faceplate. The chamber body, the pedestal, and the faceplate may define a processing region. The faceplate may be coupled with an RF power source. The systems may include a remote plasma unit. The remote plasma unit may be coupled at electrical ground. The systems may include a discharge tube extending from the remote plasma unit towards the faceplate. The discharge tube may define a central aperture. The discharge tube may be electrically coupled with each of the faceplate and the remote plasma unit. The discharge tube may include ferrite extending about the central aperture of the discharge tube.
    Type: Application
    Filed: October 23, 2020
    Publication date: April 28, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Khokan Chandra Paul, Tsutomu Tanaka, Adam J. Fischbach, Abhijit A. Kangude, Juan Carlos Rocha-Alvarez
  • Publication number: 20220122873
    Abstract: Exemplary semiconductor processing systems include a processing chamber, a power supply, and a chuck disposed at least partially within the processing chamber. The chuck includes a chuck body defining a vacuum port. The chuck also includes first and second coplanar electrodes embedded in the chuck body and connected to the power supply. In some examples, coplanar electrodes include concentric electrodes defining a concentric gap in between. Exemplary semiconductor processing methods may include activating the power supply for the electrostatic chuck to secure a semiconductor substrate on the body of the chuck and/or activating the vacuum port defined by the body of the electrostatic chuck. Some processing can be carried out at increased pressure, while other processing can be carried out at reduced pressure with increased chucking voltage.
    Type: Application
    Filed: October 19, 2020
    Publication date: April 21, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Jian Li, Dmitry A. Dzilno, Juan Carlos Rocha-Alvarez, Paul L. Brillhart, Akshay Gunaji, Mayur Govind Kulkarni, Sandeep Bindgi, Sanjay Kamath, Kwangduk Douglas Lee, Zongbin Wang, Yubin Zhang, Yong Xiang Lim
  • Publication number: 20220122875
    Abstract: Exemplary support assemblies may include an electrostatic chuck body defining a substrate support surface. The substrate support assemblies may include a support stem coupled with the electrostatic chuck body. The substrate support assemblies may include a heater embedded within the electrostatic chuck body. The substrate support assemblies may include a first bipolar electrode embedded within the electrostatic chuck body between the heater and the substrate support surface. The first bipolar electrode may include at least two separated mesh sections, with each mesh section characterized by a circular sector shape. The substrate support assemblies may include a second bipolar electrode embedded within the electrostatic chuck body between the heater and the substrate support surface. The second bipolar electrode may include a continuous mesh extending through the at least two separated mesh sections of the first bipolar electrode.
    Type: Application
    Filed: October 21, 2020
    Publication date: April 21, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Jian Li, Zheng J. Ye, Dmitry A. Dzilno, Juan Carlos Rocha-Alvarez
  • Publication number: 20220122874
    Abstract: A method reduces differences in chucking forces that are applied by two electrodes of an electrostatic chuck, to a substrate disposed atop the chuck. The method includes providing initial chucking voltages to each of the two electrodes, and measuring an initial current provided to at least a first electrode of the two electrodes. The method further includes initiating a process that affects a DC voltage of the substrate, then measuring a modified current provided to at least the first electrode, and determining, based at least on the initial current and the modified current, a modified chucking voltage for a selected one of the two electrodes, that will reduce chucking force imbalance across the substrate. The method also includes providing the modified chucking voltage to the selected one of the two electrodes.
    Type: Application
    Filed: October 21, 2020
    Publication date: April 21, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Jian Li, Juan Carlos Rocha-Alvarez, Dmitry A. Dzilno
  • Patent number: 11299805
    Abstract: Implementations described herein protect a substrate support from corrosive cleaning gases used at high temperatures. In one embodiment, a substrate support has a shaft having an outer wall. The substrate support has a heater. The heater has a body having a top surface, a side surface and a bottom surface extending from the outer wall of the shaft. The top surface is configured to support a substrate during plasma processing of the substrate. A covering is provided for at least two of the top surface, side surface and bottom surface. The covering is selected to resist corrosion of the body at temperatures in excess of about 400 degrees Celsius. A sleeve circumscribing the shaft, the sleeve and the outer wall of the shaft forming a space therebetween, the space adapted to flow a purge gas therethrough in a direction toward the body.
    Type: Grant
    Filed: March 8, 2019
    Date of Patent: April 12, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Abdul Aziz Khaja, Ren-Guan Duan, Amit Kumar Bansal, Jianhua Zhou, Juan Carlos Rocha-Alvarez
  • Publication number: 20220108907
    Abstract: Exemplary semiconductor processing systems may include a chamber body including sidewalls and a base. The chamber body may define an interior volume. The systems may include a substrate support extending through the base of the chamber body. The substrate support may be configured to support a substrate within the interior volume. The systems may include a faceplate positioned within the interior volume of the chamber body. The faceplate may define a plurality of apertures through the faceplate. The systems may include a leveling apparatus seated on the substrate support. The leveling apparatus may include a plurality of piezoelectric pressure sensors.
    Type: Application
    Filed: October 5, 2020
    Publication date: April 7, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Katherine Woo, Paul L. Brillhart, Jian Li, Shinnosuke Kawaguchi, David W. Groechel, Dorothea Buechel-Rimmel, Juan Carlos Rocha-Alvarez, Paul E. Fisher, Chidambara A. Ramalingam, Joseph J. Farah
  • Patent number: 11293099
    Abstract: The present disclosure relates to a semiconductor processing apparatus. The processing chamber includes a chamber body and lid defining an interior volume, a substrate support disposed in the interior volume and a showerhead assembly disposed between the lid and the substrate support. The showerhead assembly includes a faceplate configured to deliver a process gas to a processing region defined between the showerhead assembly and the substrate support and an underplate positioned above the faceplate, defining a first plenum between the lid and the underplate, the having multiple zones, wherein each zone has a plurality of openings that are configured to pass an amount of inert gas from the first plenum into a second plenum defined between the faceplate and the underplate, in fluid communication with the plurality of openings of each zone such that the inert gas mixes with the process gas before exiting the showerhead assembly.
    Type: Grant
    Filed: May 5, 2020
    Date of Patent: April 5, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Amit Kumar Bansal, Juan Carlos Rocha-Alvarez, Sanjeev Baluja, Sam H. Kim, Tuan Anh Nguyen
  • Publication number: 20220102179
    Abstract: Exemplary semiconductor processing systems may include a processing chamber and an electrostatic chuck disposed at least partially within the processing chamber. The electrostatic chuck may include at least one electrode and a heater. A semiconductor processing system may include a power supply to provide a signal to the electrode to provide electrostatic force to secure a substrate to the electrostatic chuck. The system may also include a filter communicatively coupled between the power supply and the electrode. The filter is configured to remove or reduce noise introduced into the chucking signal by operating the heater while the electrostatic force on the substrate is maintained. The filter may include active circuitry, passive circuitry, or both, and may include an adjustment circuit to set the gain of the filter so that an output signal level from the filter corresponds to an input signal level for the filter.
    Type: Application
    Filed: September 29, 2020
    Publication date: March 31, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Zheng John Ye, Daemian Raj Benjamin Raj, Rana Howlader, Abhigyan Keshri, Sanjay G. Kamath, Dmitry A. Dzilno, Juan Carlos Rocha-Alvarez, Shailendra Srivastava, Kristopher R. Enslow, Xinhai Han, Deenesh Padhi, Edward P. Hammond
  • Patent number: 11276562
    Abstract: A system for modifying the uniformity pattern of a thin film deposited in a plasma processing chamber includes a single radio-frequency (RF) power source that is coupled to multiple points on the discharge electrode of the plasma processing chamber. Positioning of the multiple coupling points, a power distribution between the multiple coupling points, or a combination of both are selected to at least partially compensate for a consistent non-uniformity pattern of thin films produced by the chamber. The power distribution between the multiple coupling points may be produced by an appropriate RF phase difference between the RF power applied at each of the multiple coupling points.
    Type: Grant
    Filed: March 2, 2020
    Date of Patent: March 15, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Zheng John Ye, Ganesh Balasubramanian, Thuy Britcher, Jay D. Pinson, II, Hiroji Hanawa, Juan Carlos Rocha-Alvarez, Kwangduk Douglas Lee, Martin Jay Seamons, Bok Hoen Kim, Sungwon Ha
  • Patent number: 11270870
    Abstract: A method of forming a radio frequency (RF) strap for use in a process chamber is provided. The method includes positioning a core strap including a first material that is electrically and thermally conductive in a first electrochemical bath. The first electrochemical bath includes a first solvent and a first plating precursor. The method further includes forming a first protective coating on an outer surface of the core strap, removing the first solvent and the first plating precursor from the core strap having the first protective coating formed thereon, post-treating the core strap having the first protective coating formed thereon, positioning the core strap having the first protective coating formed thereon in a second electrochemical bath, and forming a second protective coating on an outer surface of the first protective coating.
    Type: Grant
    Filed: March 2, 2020
    Date of Patent: March 8, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Ren-Guan Duan, Juan Carlos Rocha-Alvarez, Bushra Afzal
  • Publication number: 20220064797
    Abstract: A lid for a process chamber includes a plate having a first surface and a second surface opposite the first surface. The first surface has a recess and a seal groove formed in the first surface and surrounding the recess. The lid further includes an array of holes extending from the recess to the second surface.
    Type: Application
    Filed: August 16, 2021
    Publication date: March 3, 2022
    Inventors: Akshay DHANAKSHIRUR, Juan Carlos ROCHA-ALVAREZ, Kaushik Comandoor ALAYAVALLI, Jay D. PINSON, II, Rick KUSTRA, Badri N. RAMAMURTHI, Anup Kumar SINGH, Ganesh BALASUBRAMANIAN, Bhaskar KUMAR, Vinayak Vishwanath HASSAN, Canfeng LAI, Kallol BERA, Sathya Swaroop GANTA
  • Publication number: 20220020615
    Abstract: Exemplary substrate processing systems may include a plurality of processing regions. The systems may include a transfer region housing defining a transfer region fluidly coupled with the plurality of processing regions. The systems may include a plurality of substrate supports. Each substrate support of the plurality of substrate supports may be vertically translatable between the transfer region and an associated processing region of the plurality of processing regions. The systems may include a transfer apparatus including a rotatable shaft extending through the transfer region housing. The transfer apparatus may also include an end effector coupled with the rotatable shaft. The systems may include an exhaust foreline including a plurality of foreline tails. Each foreline tail of the plurality of foreline tails may be fluidly coupled with a separate processing region of the plurality of processing regions. The systems may include a plurality of throttle valves.
    Type: Application
    Filed: July 19, 2020
    Publication date: January 20, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Nitin Pathak, Vinay K. Prabhakar, Badri N. Ramamurthi, Viren Kalsekar, Juan Carlos Rocha-Alvarez
  • Publication number: 20220013373
    Abstract: Exemplary substrate support assemblies may include a platen characterized by a first surface configured to support a semiconductor substrate. The assemblies may include a first stem section coupled with a second surface of the platen opposite the first surface of the platen. The assemblies may include a second stem section coupled with the first stem section. The second stem section may include a housing and a rod holder disposed within the housing. The second stem section may include a connector seated within the rod holder at a first end of the connector. The second stem section may include a heater rod disposed within the first end of the connector and a heater extension rod coupled with the connector at a second end of the connector. The second stem section may include an RF rod and an RF strap coupling the RF rod with an RF extension rod.
    Type: Application
    Filed: July 7, 2020
    Publication date: January 13, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Jian Li, Edward P. Hammond, Viren Kalsekar, Vidyadharan Srinivasa Murthy Bangalore, Juan Carlos Rocha-Alvarez
  • Publication number: 20210363635
    Abstract: An apparatus for distributing a gas within a process chamber is disclosed. The apparatus has a body formed from a distribution portion surrounded by a coupling portion. A heater is disposed within the distribution portion to heat the body to an elevated temperature. A bridge extends between the coupling portion and the distribution portion. The bridge limits heat transfer between the distribution portion and the coupling portion.
    Type: Application
    Filed: March 19, 2019
    Publication date: November 25, 2021
    Inventors: Juan Carlos ROCHA-ALVAREZ, David H. QUACH
  • Patent number: D938373
    Type: Grant
    Filed: October 25, 2019
    Date of Patent: December 14, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Jason M. Schaller, Benjamin Riordon, Mitchell DiSanto, Paul Forderhase, Gary Wyka, Jeffrey Hudgens, Paul Z. Wirth, Charles T. Carlson, Siva Chandrasekar, Michael Carrell, Venkata Raghavaiah Chowdhary Kode, Dmitry A. Dzilno, Juan Carlos Rocha-Alvarez