Abstract: In one aspect of the present invention, a method is provided. The method includes disposing a substantially amorphous cadmium tin oxide layer on a support; and thermally processing the substantially amorphous cadmium tin oxide layer in an atmosphere substantially free of cadmium from an external source to form a transparent layer, wherein the transparent layer has an electrical resistivity less than about 2×10?4 Ohm-cm. Method of making a photovoltaic device is also provided.

Abstract: A method of manufacturing semiconductor assemblies is provided. The manufacturing method includes thermally processing a first semiconductor assembly comprising a first semiconductor layer disposed on a first support and thermally processing a second semiconductor assembly comprising a second semiconductor layer disposed on a second support. The first and second semiconductor assemblies are thermally processed simultaneously, and the first and second semiconductor assemblies are arranged such that the first semiconductor layer faces the second semiconductor layer during the thermal processing.

Abstract: Systems and methods for crystal growth are provided. One method includes producing a lateral thermal profile in a furnace having a crucible therein containing a material for growing a crystal. The lateral thermal profile has three zones, wherein the first and third zones have temperatures above and below a melting point of the material, respectively, and the second zone has a plurality of temperatures with at least one temperature equal to the melting point of the material. The method further includes combining the lateral thermal profile with a vertical thermal gradient produced in the furnace, wherein the vertical thermal gradient causes a point in a bottom of the crucible located in the third zone to be the coldest point in the crucible. The method also includes transferring heat from the first and second zones to the third zone to produce a leading edge of the interface.

Abstract: In one aspect of the present invention, a method is included. The method includes thermally processing an assembly to form at least one transparent layer. The assembly includes a first panel including a first layer disposed on a first support and a second panel including a second layer disposed on a second support, wherein the second panel faces the first panel, and wherein the first layer and the second layer include substantially amorphous cadmium tin oxide. Method of making a photovoltaic device is also included.

Abstract: In one aspect of the present invention, a method is provided. The method includes disposing a substantially amorphous cadmium tin oxide layer on a support; and thermally processing the substantially amorphous cadmium tin oxide layer in an atmosphere substantially free of cadmium from an external source to form a transparent layer, wherein the transparent layer has an electrical resistivity less than about 2×10?4 Ohm-cm. Method of making a photovoltaic device is also provided.

Abstract: In one aspect of the present invention, a method is provided. The method includes disposing a substantially amorphous cadmium tin oxide layer on a support and rapidly thermally annealing the substantially amorphous cadmium tin oxide layer by exposing a first surface of the substantially amorphous cadmium tin oxide layer to an electromagnetic radiation to form a transparent layer. A method of making a photovoltaic device is also provided.

Abstract: A method of manufacturing a transparent oxide layer is provided. The manufacturing method includes disposing a cadmium tin oxide layer on a support, placing the support with the cadmium tin oxide layer within a chamber of a rapid thermal annealing system, and rapidly thermally annealing the cadmium tin oxide layer by exposing the cadmium tin oxide layer to electromagnetic radiation to form the transparent oxide layer, wherein the rapid thermal anneal is performed without first pumping down the chamber.

Abstract: In one aspect of the present invention, a transparent electrode, is presented. The transparent electrode includes a substrate and a transparent layer disposed on the substrate. The transparent layer includes (a) a first region including cadmium tin oxide; (b) a second region including tin and oxygen; and (c) a transition region including cadmium, tin, and oxygen interposed between the first region and the second region, wherein an atomic ratio of cadmium to tin in the transition region varies across a thickness of the transition region. The second region further has an electrical resistivity greater than an electrical resistivity of the first region. A photovoltaic device, a photovoltaic module, a method of making is also presented.

Abstract: Methods are provided for forming a back contact for a photovoltaic cell that includes at least one semiconductor layer. One method includes depositing at least one back contact material on a metal contact. The back contact material comprises a metal nitride or a metal phosphide. The method further includes depositing an absorber layer comprising cadmium and tellurium above the back contact material and thermally processing the back contact material, such that the back contact material interacts with the absorber layer to form an interlayer that lowers a contact resistance for the photovoltaic cell. A photovoltaic cell is also provided and includes comprising a metal contact, at least one back contact material disposed on the metal contact, and an absorber layer comprising a material comprising cadmium and tellurium disposed above the back contact material.

Abstract: A method for forming a back contact for a photovoltaic cell that includes at least one semiconductor layer is provided. The method includes applying a continuous film of a chemically active material on a surface of the semiconductor layer and activating the chemically active material such that the activated material etches the surface of the semiconductor layer. The method further includes removing the continuous film of the activated material from the photovoltaic cell and depositing a metal contact layer on the etched surface of the semiconductor layer.

Abstract: According to one aspect of the invention, an improved process for preparing a surface of substrate is provided wherein the surface of the substrate is prepared for a chemical mechanical polishing (CMP) process, the CMP process is performed on the surface of the substrate, and the surface of the substrate is finished to clear the substrate surface of any active ingredients from the CMP process. Also, an improved substrate produced by the method is provided. According to one aspect of the invention, particular polishing materials and procedures may be used that allow for increased quality of AlN substrate surfaces.

Abstract: An apparatus and method for fabricating a mount for an aluminum nitride (AlN) seed for single crystal aluminum nitride growth is provided. A holder having a proximal base and wall portions extending therefrom is fabricated from crystal growth crucible material, and defines an internal cavity. An AlN seed is placed within the holder, and placed within a nitrogen atmosphere at a temperature at or exceeding the melting point of a suitable material capable of forming a nitride ceramic by nitridation, such as aluminum. Pellets fabricated from this material are dropped into the holder and onto the seed, so that they melt and react with the nitrogen atmosphere to form a nitride ceramic. The seed is effectively molded in-situ with the ceramic, so that the ceramic and holder forms a closely conforming holder for the seed, suitable for single crystal AlN growth.

Abstract: According to one aspect of the invention, an improved process for preparing a surface of substrate is provided wherein the surface of the substrate is prepared for a chemical mechanical polishing (CMP) process, the CMP process is performed on the surface of the substrate, and the surface of the substrate is finished to clear the substrate surface of any active ingredients from the CMP process. Also, an improved substrate produced by the method is provided. According to one aspect of the invention, particular polishing materials and procedures may be used that allow for increased quality of AlN substrate surfaces.

Abstract: According to one aspect of the invention, an improved process for preparing a surface of substrate is provided wherein the surface of the substrate is prepared for a chemical mechanical polishing (CMP) process, the CMP process is performed on the surface of the substrate, and the surface of the substrate is finished to clear the substrate surface of any active ingredients from the CMP process. Also, an improved substrate produced by the method is provided. According to one aspect of the invention, particular polishing materials and procedures may be used that allow for increased quality of AlN substrate surfaces.