Patents by Inventor Juan Fernandez-deCastro

Juan Fernandez-deCastro has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6449135
    Abstract: The present invention is a magnetoresistive (MR) sensor (100) that combines the advantages of abutted junction structure and regular overlaid structure. The abutted junction design is used with the soft adjacent layer (SAL) (108) and the overlaid structure is used with the MR element (120). The method of making the MR sensor (100) comprises depositing SAL (108) on top of the gap layer (106) and depositing spacer material (110) on top of the SAL (108). A mask (130) is placed over the central region of the spacer material (110) and SAL (108). The spacer material (110) and SAL (108) are removed in the areas not covered by the mask (130). An underlayer material (112) is deposited in the areas where the SAL (108) and spacer material (110) were removed. A hard-biasing material (114) is deposited on top of the underlayer (112).
    Type: Grant
    Filed: November 6, 1998
    Date of Patent: September 10, 2002
    Assignee: Seagate Technology LLC
    Inventors: Juren Ding, Song Sheng Xue, Juan Fernandez-deCastro, James Dolejsi, Patrick Joseph Ryan
  • Publication number: 20020027754
    Abstract: The present invention is a magnetoresistive (MR) sensor (100) that combines the advantages of abutted junction structure and regular overlaid structure. The abutted junction design is used with the soft adjacent layer (SAL) (108) and the overlaid structure is used with the MR element (120). The method of making the MR sensor (100) comprises depositing SAL (108) on top of the gap layer (106) and depositing spacer material (110) on top of the SAL (108). A mask (130) is placed over the central region of the spacer material (110) and SAL (108). The spacer material (110) and SAL (108) are removed in the areas not covered by the mask (130). An underlayer material (112) is deposited in the areas where the SAL (108) and spacer material (110) were removed. A hard-biasing material (114) is deposited on top of the underlayer (112).
    Type: Application
    Filed: November 6, 1998
    Publication date: March 7, 2002
    Inventors: JUREN DING, SONG SHENG XUE, JUAN FERNANDEZ-DECASTRO, JAMES DOLEJSI, PATRICK JOSEPH RYAN