Abstract: Disclosed herein are indium-tin-oxide nanoparticles and a method for continuously producing precipitated indium-tin nanoparticles having a particle size range of substantially from about 10 nm to about 200 nm and a substantially consistent ratio of indium to tin in the resultant nanoparticles across the duration of the continuous process, based on the ratio of indium to tin in a seeding solution. The method comprises preparing intermediate indium and tin compounds of the general formula [M(OH)xCy], where M represents the indium or tin ionic component of indium or tin salts, C represents the cationic component of indium or tin salt(s), x is a number greater than 0 and y=[M*valance?x]/C* valance in the seeding solution. The intermediate compounds are continuously precipitated with a base solution in a reaction vessel initially having a solvent contained therein. The method also provides a means for controlling the shape of the resultant nanoparticles.

Abstract: Disclosed herein are indium-tin-oxide nanoparticles and a method for continuously producing precipitated indium-tin nanoparticles having a particle size range of substantially from about 10 nm to about 200 nm and a substantially consistent ratio of indium to tin in the resultant nanoparticles across the duration of the continuous process, based on the ratio of indium to tin in a seeding solution. The method comprises preparing intermediate indium and tin compounds of the general formula [M(OH)xCy], where M represents the indium or tin ionic component of indium or tin salts, C represents the cationic component of indium or tin salt(s), x is a number greater than 0 and y=[M*valance?x]/C* valance in the seeding solution. The intermediate compounds are continuously precipitated with a base solution in a reaction vessel initially having a solvent contained therein. The method also provides a means for controlling the shape of the resultant nanoparticles.

Abstract: The invention is directed to a photoresist-free method for depositing films composed of metals, such as copper or silica, or their oxides from metal complexes. More specifically, the method involves applying an amorphous film of a metal complex to a substrate. The metal complexes have a metal and a photo-degradable ligand. A preferred ligand is acac or alkyl-acac, expecially in combination with acetate ligands. These films, upon, for example, thermal, photochemical or electron beam irradiation may be converted to the metal or its oxides. By using either directed light or electron beams, this may lead to a patterned metal or metal oxide film in a single step. Low temperature baking may be used to remove residual organics from the deposited film. If silica is the metal, the deposited film has excellent smoothness and dielectric properties.

Abstract: A photoresist-free method for depositing films composed of metal and metal oxide from metal complexes. More specifically, the method involves the deposition of silver and silver oxide films by applying the amorphous film of a silver complex to a substrate. The silver complexes have the formula AgaLc, wherein L is preferentially a ligand selected from the group consisting of acac, carboxylato, alkoxy, azide, carbonyl, nitrato, amine, halide, nitro, and mixtures thereof, and a and c are greater than one. These films, upon, for example, thermal, photochemical or electron beam irradiation may be converted to the metal or its oxides. By using either directed light or electron beams, this may lead to a patterned metal or metal oxide film in a single step.

Abstract: A photoresist-free method for making patterned films of metal oxides, metals, or other metal containing compounds is described. The method involves applying a thin film coating of a metal complex, resulting in the formation of a liquid crystal film. This film can be photolyzed resulting in a chemical reaction which deposits a metal or metal oxide film. The metal complex used is photoreactive and undergoes a chemical reaction in the presence of light of a suitable wavelength. The end product of the reactions depends upon the atmosphere in which the reactions take place. Metal oxide films may be made in air. Patterned films may be made by exposing only selected portions of the film to light. Patterns of two or more materials may be laid down from the same film by exposing different parts of the film to light in different atmospheres.

Abstract: The invention is directed to a photoresist-free method for depositing films composed of metals, such as copper or silica, or their oxides from metal complexes. More specifically, the method involves applying an amorphous film of a metal complex to a substrate. The metal complexes have a metal and a photo-degradable ligand. A preferred ligand is acac or alkyl-acac, expecially in combination with acetate ligands. These films, upon, for example, thermal, photochemical or electron beam irradiation may be converted to the metal or its oxides. By using either directed light or electron beams, this may lead to a patterned metal or metal oxide film in a single step. Low temperature baking may be used to remove residual organics from the deposited film. If silica is the metal, the deposited film has excellent smoothness and dielectric properties.

Abstract: A photoresist-free method for making patterned films of metal oxides, metals, or other metal containing compounds is described. The method involves applying a thin film coating of a metal complex, resulting in the formation of a liquid crystal film. This film can be photolyzed resulting in a chemical reaction which deposits a metal or metal oxide film.. The metal complex used is photoreactive and undergoes a chemical reaction in the presence of light of a suitable wavelength. The end product of the reactions depends upon the atmosphere in which the reactions take place. Metal oxide films may be made in air. Patterned films may be made by exposing only selected portions of the film to light. Patterns of two or more materials may be laid down from the same film by exposing different parts of the film to light in different atmospheres.

Abstract: A method for depositing nanoparticles in a thin film through the dispersion of such nanoparticles in a precursor solution which is deposited on a substrate and converted into a metal or metal oxide film. The resulting metal or metal oxide film will contain embedded nanoparticles. Such films can be used in a variety of applications such as diffusion barriers, electrodes for capacitors, conductors, resistors, inductors, dielectrics, or magnetic materials. The nanoparticle material may be selected by one skilled in the art based on the particular application.

Abstract: A method for depositing nanoparticles in a thin film through the dispersion of such nanoparticles in a precursor solution which is deposited on a substrate and converted into a metal or metal oxide film. The resulting metal or metal oxide film will contain embedded nanoparticles. Such films can be used in a variety of applications such as diffusion barriers, electrodes for capacitors, conductors, resistors, inductors, dielectrics, or magnetic materials. The nanoparticle material may be selected by one skilled in the art based on the particular application.