Abstract: A rotary connection structure includes a first external connection assembly and a rotation damping structure. The first external connection assembly is for external connection with a first photography device. The rotation damping structure includes a mounting member, a fastening member, and a connecting member. One end of the fastening member extends through the connecting member to fix and connect to the mounting member. The connecting member is rotatable, in a damped manner, about the fastening member. The connecting member is connected to the first external connection assembly. The first external connection assembly can be a clamp assembly. The mounting member is for connection with a second photography device. The second photography device can be a handgrip, and the handgrip is fixedly connected to the mounting member. The rotary connection structure proposed in the present invention realizes rotation of the first photography device and the second photography device.

Abstract: A photography kit is provided, which includes a first photography assembly including a first frame and a clamping assembly including two clamping bodies, a mounting seat, and a first locking assembly. The two clamping bodies are rotatably arranged on two opposite sides of the mounting seat. A connecting part is protruded at outside surfaces of the clamping bodies respectively. An end of the connecting part away from the clamping body is connected with a pressing part, which extends towards a rear end of the mounting seat, so that a pressing space is formed between the pressing part and the mounting seat. The first locking assembly is telescopically mounted to the mounting seat, a limiting part of the first locking assembly extends from the front end of the mounting seat, and the limiting part is configured for being inserted into a positioning hole correspondingly defined on the first frame.

Abstract: A system and method that obtains contact heights of a packaged chip. In particular, the system includes a first light source for emitting direct light, a second light source for emitting structured light, two or more cameras pointed towards the packaged chip for capturing a first set of images of the packaged chip, and a second set of images of the packaged chip, and at least one processor that processes the first set of images and the second set of images captured by the cameras to determine contact heights of the packaged chip. The cameras capture the first set of images when the first light source emits direct light towards the packaged chip, and capture the second set of images when the second light source emits structured light towards the packaged chip.

Abstract: In accordance with the objectives of the invention a new design and method for the implementation thereof is provided in the form of an “oxide ring”. A conventional die is provided with a guard ring or sealing ring, which surrounds and isolates the active surface area of an individual semiconductor die. The “oxide ring” of the invention surrounds the guard ring or sealing ring and forms in this manner a mechanical stress release buffer between the sawing paths of the die and the active surface area of the singulated individual semiconductor die.

Abstract: A method of forming an aligned dual damascene opening, comprising including the following sequential steps. A structure having a metal structure formed thereover is provided. A layer stack is formed over the metal structure. The layer stack comprises, in ascending order: a bottom etch stop layer; a lower dielectric material layer; a middle etch stop layer; a middle dielectric material layer; and an upper dielectric layer. The upper dielectric layer is patterned to form an opening exposing a portion of the underlying middle dielectric material layer. The opening having a width. A patterned mask layer is formed over the patterned upper dielectric layer leaving exposed opposing portions of the patterned upper dielectric layer. The middle dielectric material layer is patterned to form an opening therein using the patterned mask layer and the exposed portions of the upper dielectric layer as masks. The middle dielectric material layer opening exposing a portion of the middle etch stop layer.