Abstract: The invention provides a heat-storage medium conveying system for a solar-thermal power plant. The system includes a high-level tank subsystem including a high-level tank used to store the heat-storage medium. The system further includes a heat-storage medium transport subsystem. The high-level tank subsystem is connected with the heat-storage medium transport subsystem. The heat-storage medium transport subsystem includes a low-level tank. A mounting height of the low-level tank is lower than that of the high-level tank. A volume of the low-level tank is smaller than a volume of the high-level tank. The heat-storage medium can enter the low-level tank from the high-level tank partially or completely by its own gravity. The low-level tank is provided with a conveying pump, and the heat-storage medium is pumped out of the low-level tank through the conveying pump.

Abstract: A three-dimensional (3D) memory device includes a memory stack including interleaved conductive layers and dielectric layers, a channel structure extending vertically through the memory stack, a first dielectric layer having a first dielectric material in contact with the memory stack and a plug of the channel structure, an intermedia dielectric layer on the first dielectric layer and having a second dielectric material different from the first dielectric material, a second dielectric layer on the intermedia dielectric layer, a slit structure extending along a lateral direction to separate the memory stack, a first contact penetrating the intermedia dielectric layer and the first dielectric layer, a second contact penetrating the second dielectric layer and in contact with at least the upper end of the first contact, a third contact penetrating the intermedia dielectric layer and the first dielectric layer, the third contact being in contact with the slit structure, and a fourth contact penetrating the second

Abstract: Embodiments of 3D memory devices are disclosed. In an example, a 3D memory device includes a memory stack, a structure penetrating the memory stack; a dielectric stack on the memory stack, and a contact structure penetrating the dielectric stack and being in contact with the structure. The dielectric stack comprises a first dielectric layer and a second dielectric layer having a first dielectric material, and an intermedia dielectric layer sandwiched by the first dielectric layer and the second dielectric layer, and having a second dielectric material different from the first dielectric material. The contact structure comprises a lower contact portion penetrating the first dielectric layer and the intermedia dielectric layer, the lower contact portion having a first lateral dimension, and an upper contact portion penetrating the second dielectric layer, the upper contact portion having a second lateral dimension less than the first lateral dimension.

Abstract: Disclosed is food-grade lubricating grease and a method for preparing the same, belonging to the technical field of lubricating grease. The food-grade lubricating grease is prepared from the following components in percentage by mass: 75% to 85% of food-grade white oil, 6% to 16% of stearic acid, 2.0% to 3.0% of benzoic acid, 4.7% to 8.7% of aluminum isopropoxide, 1.0% to 1.5% of water and 1.0% to 7.0% of nano-PTFE, and has good extreme-pressure, abrasion-resistant and friction-reduction properties, a last non-seizure load (PB) reaching 411.6 N, a sintering load (PD) reaching 1,960 N, and a friction coefficient reduced by 18.5%. The lubricating grease can be used for a food production industry and in household food appliances, the service life of a device and the service life of the food-grade lubricating grease are effectively prolonged, and meanwhile, food security is guaranteed to a certain degree.

Abstract: Disclosed herein are photoactivable fluorophores comprising one or more thiocarbonyl groups as well as conjugates and compositions thereof. The present disclosure also provides methods of preparing photoactivatable fluorophores as well as methods of imaging using the photoactivatable fluorophores, conjugates, and compositions of the present disclosure.

Abstract: Embodiments of structure and methods for forming a three-dimensional (3D) memory device are provided. In an example, a 3D memory device includes a substrate and a stack structure in an insulating structure on the substrate. The stack structure includes alternating a plurality of conductor layers and a plurality of insulating layers. The 3D memory device further includes a source structure extending vertically through the alternating stack structure. The source structure includes at least one staggered portion along a respective sidewall. The 3D memory device further includes a channel structure and a support pillar each extending vertically through the alternating stack structure and a plurality of contact structures extending vertically through the insulating structure.

Abstract: Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, a method for forming a 3D memory device is disclosed. A structure extending vertically through a memory stack including interleaved conductive layers and dielectric layers is formed above a substrate. A first dielectric layer is formed on the memory stack. An etch stop layer is formed on the first dielectric layer. A first contact is formed through the etch stop layer and the first dielectric layer and in contact with an upper end of the structure. A second dielectric layer is formed on the etch stop layer. A second contact is formed through the second dielectric layer and in contact with at least an upper end of the first contact.

Abstract: Embodiments of 3D memory devices are disclosed. In an example, a 3D memory device includes a memory stack, a structure penetrating the memory stack; a dielectric stack on the memory stack, and a contact structure penetrating the dielectric stack and being in contact with the structure. The dielectric stack comprises a first dielectric layer and a second dielectric layer having a first dielectric material, and an intermedia dielectric layer sandwiched by the first dielectric layer and the second dielectric layer, and having a second dielectric material different from the first dielectric material. The contact structure comprises a lower contact portion penetrating the first dielectric layer and the intermedia dielectric layer, the lower contact portion having a first lateral dimension, and an upper contact portion penetrating the second dielectric layer, the upper contact portion having a second lateral dimension less than the first lateral dimension.

Abstract: Disclosed is food-grade lubricating grease and a method for preparing the same, belonging to the technical field of lubricating grease. The food-grade lubricating grease is prepared from the following components in percentage by mass: 75% to 85% of food-grade white oil, 6% to 16% of stearic acid, 2.0% to 3.0% of benzoic acid, 4.7% to 8.7% of aluminum isopropoxide, 1.0% to 1.5% of water and 1.0% to 7.0% of nano-PTFE, and has good extreme-pressure, abrasion-resistant and friction-reduction properties, a last non-seizure load (PB) reaching 411.6 N, a sintering load (PD) reaching 1,960 N, and a friction coefficient reduced by 18.5%. The lubricating grease can be used for a food production industry and in household food appliances, the service life of a device and the service life of the food-grade lubricating grease are effectively prolonged, and meanwhile, food security is guaranteed to a certain degree.

Abstract: Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate, a memory stack including interleaved conductive layers and dielectric layers above the substrate, a structure extending vertically through the memory stack, a first dielectric layer on the memory stack, an etch stop layer on the first dielectric layer, a second dielectric layer on the etch stop layer, a first contact through the etch stop layer and the first dielectric layer and in contact with an upper end of the structure, and a second contact through the second dielectric layer and in contact with at least an upper end of the first contact.

Abstract: Embodiments of structure and methods for forming a three-dimensional (3D) memory device are provided. In an example, a 3D memory device includes a substrate, an alternating layer stack on the substrate, and a barrier structure extending vertically through the alternating layer stack. The alternating layer stack includes (i) an alternating dielectric stack having a plurality of dielectric layer pairs enclosed laterally by at least the barrier structure, and (ii) an alternating conductor/dielectric stack having a plurality of conductor/dielectric layer pairs. The 3D memory device also includes a channel structure and a source structure each extending vertically through the alternating conductor/dielectric stack, and a contact structure extending vertically through the alternating dielectric stack. The source structure includes at least one staggered portion along a respective sidewall.

Abstract: Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, a method for forming a 3D memory device is disclosed. A dielectric stack including interleaved sacrificial layers and dielectric layers is formed above a substrate. A channel structure extending vertically through the dielectric stack is formed. A local dielectric layer is formed on the dielectric stack. A channel local contact opening through the local dielectric layer to expose an upper end of the channel structure, and a slit opening extending vertically through the local dielectric layer and the dielectric stack are simultaneously formed. A memory stack including interleaved conductive layers and the dielectric layers is formed by replacing, through the slit opening, the sacrificial layers with the conductive layers. A channel local contact in the channel local contact opening, and a slit structure in the slit opening are simultaneously formed.

Abstract: Embodiments of structure and methods for forming a three-dimensional (3D) memory device are provided. In an example, a 3D memory device includes a substrate and a stack structure in an insulating structure on the substrate. The stack structure includes alternating a plurality of conductor layers and a plurality of insulating layers. The 3D memory device further includes a source structure extending vertically through the alternating stack structure. The source structure includes at least one staggered portion along a respective sidewall. The 3D memory device further includes a channel structure and a support pillar each extending vertically through the alternating stack structure and a plurality of contact structures extending vertically through the insulating structure.

Abstract: The invention provides a heat-storage medium conveying system for a solar-thermal power plant. The system includes a high-level tank subsystem including a high-level tank used to store the heat-storage medium. The system further includes a heat-storage medium transport subsystem. The high-level tank subsystem is connected with the heat-storage medium transport subsystem. The heat-storage medium transport subsystem includes a low-level tank. A mounting height of the low-level tank is lower than that of the high-level tank. A volume of the low-level tank is smaller than a volume of the high-level tank. The heat-storage medium can enter the low-level tank from the high-level tank partially or completely by its own gravity. The low-level tank is provided with a conveying pump, and the heat-storage medium is pumped out of the low-level tank through the conveying pump.

Abstract: Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate, a memory stack, a channel structure, and a slit structure. The memory stack includes interleaved conductive layers and dielectric layers above the substrate. The channel structure extends vertically through the memory stack. The slit structure extends vertically through the memory stack. An upper end of the slit structure is above an upper end of the channel structure.

Abstract: Embodiments of structure and methods for forming a three-dimensional (3D) memory device are provided. In an example, a 3D memory device includes a substrate and a stack structure in an insulating structure on the substrate. The stack structure includes alternating a plurality of conductor layers and a plurality of insulating layers. The 3D memory device further includes a source structure extending vertically through the alternating stack structure. The source structure includes at least one staggered portion along a respective sidewall. The 3D memory device further includes a channel structure and a support pillar each extending vertically through the alternating stack structure and a plurality of contact structures extending vertically through the insulating structure.

Abstract: Embodiments of structure and methods for forming a three-dimensional (3D) memory device are provided. In an example, a 3D memory device includes a substrate, an alternating layer stack on the substrate, and a barrier structure extending vertically through the alternating layer stack. The alternating layer stack includes (i) an alternating dielectric stack having a plurality of dielectric layer pairs enclosed laterally by at least the barrier structure, and (ii) an alternating conductor/dielectric stack having a plurality of conductor/dielectric layer pairs. The 3D memory device also includes a channel structure and a source structure each extending vertically through the alternating conductor/dielectric stack, and a contact structure extending vertically through the alternating dielectric stack. The source structure includes at least one staggered portion along a respective sidewall.

Abstract: Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, a method for forming a 3D memory device is disclosed. A structure extending vertically through a memory stack including interleaved conductive layers and dielectric layers is formed above a substrate. A first dielectric layer is formed on the memory stack. An etch stop layer is formed on the first dielectric layer. A first contact is formed through the etch stop layer and the first dielectric layer and in contact with an upper end of the structure. A second dielectric layer is formed on the etch stop layer. A second contact is formed through the second dielectric layer and in contact with at least an upper end of the first contact.

Abstract: Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, a method for forming a 3D memory device is disclosed. A dielectric stack including interleaved sacrificial layers and dielectric layers is formed above a substrate. A channel structure extending vertically through the dielectric stack is formed. A local dielectric layer is formed on the dielectric stack. A channel local contact opening through the local dielectric layer to expose an upper end of the channel structure, and a slit opening extending vertically through the local dielectric layer and the dielectric stack are simultaneously formed. A memory stack including interleaved conductive layers and the dielectric layers is formed by replacing, through the slit opening, the sacrificial layers with the conductive layers. A channel local contact in the channel local contact opening, and a slit structure in the slit opening are simultaneously formed.