Abstract: A method for patterning a stack having a mask with a plurality of mask features is provided. A targeted deposition is provided, wherein the targeted deposition comprises a plurality of cycles, wherein each cycle comprises flowing a precursor to deposit a layer of precursor and targeted curing the layer of precursor, comprising flowing a curing gas, flowing a modification gas, forming a plasma from the curing gas and modification gas, and exposing the layer of precursor to the plasma providing a targeted curing, wherein plasma from the curing gas cures first portions of the layer of precursor and plasma from the modification gas modifies second portions of the layer of precursor, wherein the modification of the second portion reduces curing of the layer of precursor of the second portions of the layer of precursor. The stack is etched through the targeted deposition.

Abstract: A method for patterning a stack having a mask with a plurality of mask features is provided. A targeted deposition is provided, wherein the targeted deposition comprises a plurality of cycles, wherein each cycle comprises flowing a precursor to deposit a layer of precursor and targeted curing the layer of precursor, comprising flowing a curing gas, flowing a modification gas, forming a plasma from the curing gas and modification gas, and exposing the layer of precursor to the plasma providing a targeted curing, wherein plasma from the curing gas cures first portions of the layer of precursor and plasma from the modification gas modifies second portions of the layer of precursor, wherein the modification of the second portion reduces curing of the layer of precursor of the second portions of the layer of precursor. The stack is etched through the targeted deposition.

Abstract: Methods and systems for detecting a neutral voltage connection, involve determining when a value of a neutral current is equal to zero, wherein the neutral current comprises a difference between a current flowing through two legs of an electrical meter to an end customer, wherein each of the two legs comprises a first voltage with respect to a ground and a second voltage with respect to one another; and verifying that the neutral current has been detected to zero, in response to determining that the value of the neutral current is equal to zero.

Abstract: A method for patterning a stack having a mask with a plurality of mask features is provided. A targeted deposition is provided, wherein the targeted deposition comprises a plurality of cycles, wherein each cycle comprises flowing a precursor to deposit a layer of precursor and targeted curing the layer of precursor, comprising flowing a curing gas, flowing a modification gas, forming a plasma from the curing gas and modification gas, and exposing the layer of precursor to the plasma providing a targeted curing, wherein plasma from the curing gas cures first portions of the layer of precursor and plasma from the modification gas modifies second portions of the layer of precursor, wherein the modification of the second portion reduces curing of the layer of precursor of the second portions of the layer of precursor. The stack is etched through the targeted deposition.

Abstract: Methods and systems for detecting a neutral voltage connection, involve determining when a value of a neutral current is equal to zero, wherein the neutral current comprises a difference between a current flowing through two legs of an electrical meter to an end customer, wherein each of the two legs comprises a first voltage with respect to a ground and a second voltage with respect to one another; and verifying that the neutral current has been detected to zero, in response to determining that the value of the neutral current is equal to zero.

Abstract: A method for etching features in a stack below a mask with features is provided. A fill layer is deposited on the mask, wherein the fill layer fills the features of the mask. The fill layer is etched back to expose the mask. The mask is selectively removed with respect to the fill layer. The stack is etched using the fill layer as a mask.

Abstract: A system for controlling a condition of a wafer processing chamber is disclosed. According the principles of the present disclosure, the system includes memory and a first controller. The memory stores a plurality of profiles of respective ones of a plurality of first control elements. The plurality of first control elements are arranged throughout the chamber. The first controller determines non-uniformities in a substrate processing parameter associated with the plurality of first control elements. The substrate processing parameter is different than the condition of the chamber. The first controller adjusts at least one of the plurality of profiles based on the non-uniformities in the substrate processing parameter and a sensitivity of the substrate processing parameter to the condition.

Abstract: A system for controlling a condition of a wafer processing chamber is disclosed. According the principles of the present disclosure, the system includes memory and a first controller. The memory stores a plurality of profiles of respective ones of a plurality of first control elements. The plurality of first control elements are arranged throughout the chamber. The first controller determines non-uniformities in a substrate processing parameter associated with the plurality of first control elements. The substrate processing parameter is different than the condition of the chamber. The first controller adjusts at least one of the plurality of profiles based on the non-uniformities in the substrate processing parameter and a sensitivity of the substrate processing parameter to the condition.

Abstract: A method for adjusting the geometry of photomask patterns is provided. Such adjusted pattern can be employed to achieve pattern doubling in subsequent layers. A patterned photoresist mask is provided over an underlayer. A polymer layer is placed over the mask. The mask is selectively trimmed to generate individual mask features having an increased aspect ratio. Subsequent pattern layers can be formed on the trimmed mask pattern to generate a hard mask having increased pattern density. The hard mask is selectively etched and the material of the trimmed mask pattern is removed. The underlayer is then etched to achieve pattern transfer from the hard mask to the underlayer to achieve a final double density pattern.

Abstract: A method for adjusting the geometry of photomask patterns is provided. Such adjusted pattern can be employed to achieve pattern doubling in subsequent layers. A patterned photoresist mask is provided over an underlayer. A polymer layer is placed over the mask. The mask is selectively trimmed to generate individual mask features having an increased aspect ratio. Subsequent pattern layers can be formed on the trimmed mask pattern to generate a hard mask having increased pattern density. The hard mask is selectively etched and the material of the trimmed mask pattern is removed. The underlayer is then etched to achieve pattern transfer from the hard mask to the underlayer to achieve a final double density pattern.

Abstract: This invention relates to a process for recovering raw materials from a stream of residual or collected material (R) which comprises a plurality of different materials and which arises during the manufacture of paper (P) in a paper mill (1) and/or in a material processing installation (2) and/or in a paper machine (3) and which is discharged therefrom, wherein the stream of residual or collected material (R) is fed to an installation (4) for separating at least one fiber fraction contained in the stream of residual or collected material (R) via a screening operation and for separating an ash fraction (A) comprising black particles.

Abstract: A grinding disc for a disc refiner is disclosed. The grinding disc is comprised of a plurality of packs of strips. Each pack of strips is comprised of a plurality of parallel grinding strips which alternate with intermediate strips. The rear-to-front grinding surface height of the grinding strips is greater than that of the intermediate strips. Annular supporting rings define the radially inward and outward ends of the grinding strips. The grinding strips extend generally radially of the grinding disc. In an alternate embodiment, the intermediate strips are of meandering shape, whereby one intermediate strip extends between pluralities of adjacent grinding strips. The grinding and intermediate strips of a pack thereof are welded together and are welded to the supporting rings. An additional ring may be positioned to the rear of the strips intermediate the radially inward and outward ends thereof.