Patents by Inventor Judith A. Long

Judith A. Long has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4999315
    Abstract: High resistivity In-based compound Group III-V epitaxial layers are used to prevent substantial current flow through a region of a semiconductor device, such as a CSBH, DCPBH, EMBH or CMBH laser, a LED, a photodiode, a HBT, or a FET. Also disclosed is a hydride VPE process for making the high resistivity material doped with Fe. The Fe is supplied by a volatile halogenated Fe compound, and the extend of pyrolysis of the hydride is limited to allow transport of sufficient dopant to the growth area.
    Type: Grant
    Filed: December 15, 1989
    Date of Patent: March 12, 1991
    Assignee: AT&T Bell Laboratories
    Inventors: Wilbur D. Johnston, Jr., Robert F. Karlicek, Jr., Judith A. Long, Daniel P. Wilt
  • Patent number: 4888624
    Abstract: High resistivity In-based compound Group III-V epitaxial layers are used to prevent substantial current flow through a region of a semiconductor device, such as a CSBH, DCPBH, EMBH or CMBH laser, a LED, a photodiode, a HBT, or a FET. Also described is a hydride VPE process for making the high resistivity material doped with Fe. The Fe is supplied by a volatile halogenated Fe compound, and the extend of pyrolysis of the hydride is limited to allow transport of sufficient dopant to the growth area.
    Type: Grant
    Filed: April 20, 1988
    Date of Patent: December 19, 1989
    Assignee: American Telephone and Telegraph Company, AT&T Bell Laboratories
    Inventors: Wilbur D. Johnston, Jr., Robert F. Karlicek, Jr., Judith A. Long, Daniel P. Wilt
  • Patent number: 4738934
    Abstract: Epitaxial layers of semi-insulating InP grown by MOCVD on conducting InP wafers make excellent substrates for III-V semiconductor devices. Particularly appealing is the low defect density obtained because of the conducting InP wafers and excellent insulating characteristics of the semi-insulating InP layer. The invention is a procedure for doping the insulating layer by ion implantation. Such a procedure is unusually advantageous for fabricating a variety of devices including MISFETs, MESFETs and JFETs.
    Type: Grant
    Filed: May 16, 1986
    Date of Patent: April 19, 1988
    Assignee: American Telephone and Telegraph Company, AT&T Bell Laboratories
    Inventors: Wilbur D. Johnston, Jr., Judith A. Long, Albert T. Macrander, Bertram Schwartz, Shobha Singh
  • Patent number: 4716130
    Abstract: It has been found that through the use of ferrocene or iron pentacarbonyl based compounds, it is possible to produce semi-insulating epitaxial layers of indium phosphide-based compounds by an MOCVD process. Resistivities up to 1.times.10.sup.9 ohm-cm have been achieved as compared to resistivities on the order of 5.times.10.sup.3 ohm-cm for other types of semi-insulating epitaxial indium phosphide.
    Type: Grant
    Filed: February 20, 1986
    Date of Patent: December 29, 1987
    Assignee: American Telephone and Telegraph Company, AT&T Bell Laboratories
    Inventors: Wilbur D. Johnston, Jr., Judith A. Long
  • Patent number: 4660208
    Abstract: High resistivity Fe-doped InP-based MOCVD layers are used to constrain current to flow through the active region of a variety of devices such as CSBH and DCPBH lasers.
    Type: Grant
    Filed: June 15, 1984
    Date of Patent: April 21, 1987
    Assignee: American Telephone and Telegraph Company, AT&T Bell Laboratories
    Inventors: Wilbur D. Johnston, Jr., Judith A. Long, Daniel P. Wilt
  • Patent number: D439848
    Type: Grant
    Filed: December 8, 1999
    Date of Patent: April 3, 2001
    Inventors: Judith Long Taska, Glenda Long Gates