Patents by Inventor Judith A. Schmidt

Judith A. Schmidt has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods for etching the edge of a silicon wafer
    Patent number: 8309464
    Abstract: The present disclosure generally relates to the manufacture of silicon wafers, and more particularly to edge etching apparatus and methods for etching the edge of a silicon wafer.
    Type: Grant
    Filed: March 31, 2009
    Date of Patent: November 13, 2012
    Assignee: MEMC Electronic Materials, Inc.
    Inventors: Henry F. Erk, Peter D. Albrecht, Eugene R. Hollander, Thomas E. Doane, Judith A. Schmidt, Roland R. Vandamme, Guoqiang (David) Zhang
  • Edge etched silicon wafers
    Patent number: 8192822
    Abstract: The present disclosure generally relates to the manufacture of silicon wafers, and more particularly to edge etching apparatus and methods for etching the edge of a silicon wafer.
    Type: Grant
    Filed: March 31, 2009
    Date of Patent: June 5, 2012
    Assignee: MEMC Electronic Materials, Inc.
    Inventors: Henry F. Erk, Peter D. Albrecht, Eugene R. Hollander, Thomas E. Doane, Judith A. Schmidt, Roland R. Vandamme, Guoqiang (David) Zhang
  • METHODS FOR ETCHING THE EDGE OF A SILICON WAFER
    Publication number: 20090247055
    Abstract: The present disclosure generally relates to the manufacture of silicon wafers, and more particularly to edge etching apparatus and methods for etching the edge of a silicon wafer.
    Type: Application
    Filed: March 31, 2009
    Publication date: October 1, 2009
    Applicant: MEMC ELECTRONIC MATERIALS, INC.
    Inventors: Henry F. Erk, Peter D. Albrecht, Eugene R. Hollander, Thomas E. Doane, Judith A. Schmidt, Roland R. Vandamme, Guoqiang (David) Zhang
  • EDGE ETCHING APPARATUS FOR ETCHING THE EDGE OF A SILICON WAFER
    Publication number: 20090242126
    Abstract: The present disclosure generally relates to the manufacture of silicon wafers, and more particularly to edge etching apparatus and methods for etching the edge of a silicon wafer.
    Type: Application
    Filed: March 31, 2009
    Publication date: October 1, 2009
    Applicant: MEMC ELECTRONIC MATERIALS, INC.
    Inventors: Henry F. Erk, Peter D. Albrecht, Eugene R. Hollander, Thomas E. Doane, Judith A. Schmidt, Roland Vandamme, Guoqiang (David) Zhang
  • EDGE ETCHED SILICON WAFERS
    Publication number: 20090246444
    Abstract: The present disclosure generally relates to the manufacture of silicon wafers, and more particularly to edge etching apparatus and methods for etching the edge of a silicon wafer.
    Type: Application
    Filed: March 31, 2009
    Publication date: October 1, 2009
    Applicant: MEMC ELECTRONIC MATERIALS, INC.
    Inventors: Henry F. Erk, Peter D. Albrecht, Eugene R. Hollander, Thomas E. Doane, Judith A. Schmidt, Roland R. Vandamme, Guoqiang (David) Zhang
  • Silicon wafer etching process and composition
    Patent number: 7323421
    Abstract: A process for etching silicon wafers using a caustic etchant in the form of an aqueous solution comprising water, a hydroxide ion source, and a chelating agent. The process produces silicon wafers substantially free from diffused metal ions.
    Type: Grant
    Filed: June 14, 2005
    Date of Patent: January 29, 2008
    Assignee: MEMC Electronic Materials, Inc.
    Inventors: Mark G. Stinson, Henry F. Erk, Guoqiang (David) Zhang, Mick Bjelopavlic, Alexis Grabbe, Jozef G. Vermeire, Judith A. Schmidt, Thomas E. Doane, James R. Capstick
  • Process for etching silicon wafers
    Publication number: 20040108297
    Abstract: A process for etching silicon wafers using a caustic etchant in the form of an aqueous solution comprising water and a source of hydroxide ions and generally characterized by a lower concentration of water and/or higher concentration of source of hydroxide ions. In accordance with another embodiment, the caustic etchant includes a salt additive. The process produces silicon wafers with improved surface characteristics such as flatness and nanotopography.
    Type: Application
    Filed: September 18, 2003
    Publication date: June 10, 2004
    Applicant: MEMC Electronic Materials, Inc.
    Inventors: Henry F. Erk, James R. Capstick, Thomas E. Doane, Alexis Grabbe, Judith A. Schmidt, Annlie Sing, Mark G. Stinson, Guoqiang (David) Zhang